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IDT7016L17J

Multi-Port SRAM, 16KX9, 17ns, CMOS, PQCC68, PLASTIC, LCC-68

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
LCC
包装说明
QCCJ, LDCC68,1.0SQ
针数
68
Reach Compliance Code
not_compliant
ECCN代码
EAR99
最长访问时间
17 ns
其他特性
INTERRUPT FLAG; SEMAPHORE
I/O 类型
COMMON
JESD-30 代码
S-PQCC-J68
JESD-609代码
e0
长度
24.2062 mm
内存密度
147456 bit
内存集成电路类型
MULTI-PORT SRAM
内存宽度
9
湿度敏感等级
1
功能数量
1
端口数量
2
端子数量
68
字数
16384 words
字数代码
16000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
16KX9
输出特性
3-STATE
可输出
YES
封装主体材料
PLASTIC/EPOXY
封装代码
QCCJ
封装等效代码
LDCC68,1.0SQ
封装形状
SQUARE
封装形式
CHIP CARRIER
并行/串行
PARALLEL
峰值回流温度(摄氏度)
225
电源
5 V
认证状态
Not Qualified
座面最大高度
4.572 mm
最大待机电流
0.005 A
最小待机电流
4.5 V
最大压摆率
0.26 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
J BEND
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
24.2062 mm
Base Number Matches
1
文档预览
HIGH-SPEED
16K x 9 DUAL-PORT
STATIC RAM
Integrated Device Technology, Inc.
PRELIMINARY
IDT7016S/L
FEATURES:
• True Dual-Ported memory cells which allow simulta-
neous reads of the same memory location
• High-speed access
— Military: 25/35ns (max.)
— Commercial:15/17/20/25/35ns (max.)
• Low-power operation
— IDT7016S
Active: 750mW (typ.)
Standby: 5mW (typ.)
— IDT7016L
Active: 750mW (typ.)
Standby: 1mW (typ.)
• IDT7016 easily expands data bus width to 18 bits or
more using the Master/Slave select when cascading
more than one device
• M/
S
= H for
BUSY
output flag on Master
M/
S
= L for
BUSY
input on Slave
• Interrupt Flag
• On-chip port arbitration logic
• Full on-chip hardware support of semaphore signaling
between ports
• Fully asynchronous operation from either port
• Devices are capable of withstanding greater than 2001V
electrostatic discharge
• TTL-compatible, single 5V (±10%) power supply
• Available in ceramic 68-pin PGA, 68-pin PLCC, and an
80-pin TQFP
• Industrial temperature range (–40°C to +85°C) is avail-
able, tested to military electrical specifications
DESCRIPTION:
The IDT7016 is a high-speed 16K x 9 Dual-Port Static
RAMs. The IDT7016 is designed to be used as stand-alone
144K bit Dual-Port RAMs or as a combination MASTER/
SLAVE Dual-Port RAM for 18-bit-or-more word systems.
FUNCTIONAL BLOCK DIAGRAM
OE
L
R/
OE
R
R/
CE
L
W
L
CE
R
W
R
I/O
0L
- I/O
8L
I/O
Control
I/O
Control
I/O
0R
-I/O
8R
BUSY
L
(1,2)
BUSY
R
Address
Decoder
14
(1,2)
A
13L
A
0L
MEMORY
ARRAY
Address
Decoder
A
13R
A
0R
14
OE
L
R/
CE
L
W
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
R/
OE
R
W
R
SEM
R
INT
R
SEM
L
INT
L
(2)
M/
S
3190 drw 01
(2)
NOTES:
1. In MASTER mode:
BUSY
is an output and is a push-pull driver
In SLAVE mode:
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tristated push-pull drivers.
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1995 Integrated Device Technology, Inc.
AUGUST 1995
DSC-1296/-
1
IDT7016 S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAMS
PRELIMINARY
MILITARY AND COMMERCIAL TEMPERATURE RANGES
Using the IDT MASTER/SLAVE Dual-Port RAM approach in
18-bit or wider memory system applications results in full-
speed, error-free operation without the need for additional
discrete logic.
This device provides two independent ports with separate
control, address, and I/O pins that permit independent,
asynchronous access for reads or writes to any location in
memory. An automatic power down feature controlled by
CE
permits the on-chip circuitry of each port to enter a very low
standby power mode.
Fabricated using IDT’s CMOS high-performance technol-
ogy, these devices typically operate on only 750mW of power.
The IDT7016 is packaged in a ceramic 68-pin PGA, a 64-
pin PLCC and an 80-pinTQFP (Thin Quad FlatPack). Military
grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level
of performance and reliability.
PIN CONFIGURATIONS
I/O
1L
I/O
0L
I/O
8L
SEM
L
4
W
L
R/
5
INDEX
I/O
2L
I/O
3L
I/O
4L
I/O
5L
GND
I/O
6L
I/O
7L
V
CC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
9
8
7
6
3
N/C
A
13L
V
CC
A
12L
A
11L
A
10L
A
9L
A
8L
A
7L
A
6L
2
1 68 67 66 65 64 63 62 61
60
59
58
57
56
55
54
53
52
(1)
OE
L
CE
L
IDT7016
(16K x 9)
J68-1
PLCC
TOP VIEW
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
L
BUSY
L
BUSY
R
INT
R
51
50
49
48
47
46
45
GND
M/
S
44
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A
0R
A
1R
A
2R
A
3R
A
4R
I/O
7R
I/O
8R
SEM
R
N/C
A
13R
GND
A
12R
A
11R
A
10R
A
9R
A
8R
A
7R
A
6R
A
5R
OE
R
CE
R
W
R
3190 drw 02
R/
PIN NAMES (7016)
Left Port
Right Port
Names
Chip Enable
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
3190 tbl 1
CE
L
R/
W
L
OE
L
A
0L
– A
13L
I/O
0L
– I/O
8L
CE
R
R/
W
R
OE
R
A
0R
– A
13R
I/O
0R
– I/O
8R
SEM
L
INT
L
BUSY
L
M/
S
SEM
R
INT
R
BUSY
R
V
CC
(1)
GND
(2)
NOTES:
1. This text does not imply orientation of Part-Mark.
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
2
IDT7016 S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAMS
I/O
0L
I/O
8L
I/O
1L
R/
L
L
PRELIMINARY
MILITARY AND COMMERCIAL TEMPERATURE RANGES
A
12L
A
11L
A
10L
A
9L
A
8L
A
7L
A
6L
A
13L
NC
NC
V
CC
L
L
INDEX
71
70
69
66
68
67
65
64
63
62
80
79
78
77
76
74
73
72
75
61
NC
NC
NC
I/O
2L
I/O
3L
I/O
4L
I/O
5L
GND
I/O
6L
I/O
7L
V
CC
NC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
60
59
58
57
56
55
54
53
52
NC
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
L
L
IDT7016
(16K X 9)
PN-80
TQFP
TOP VIEW
(1)
51
50
49
48
47
46
45
44
43
42
41
GND
M/
R
R
A
0R
A
1R
A
2R
A
3R
A
4R
NC
NC
33
34
27
28
35
36
37
38
23
26
30
31
21
22
24
25
29
32
39
40
20
R
R/
R
NC
NC
GND
A
12R
I/O
7R
I/O
8R
A
6R
A
5R
A
7R
NC
A
13R
A
11R
A
10R
A
9R
A
8R
51
11
53
A
7L
55
A
9L
A
5L
52
A
6L
54
A
8L
NC
R
R
3190 drw 03
50
A
4L
49
A
3L
48
A
2L
47
A
1L
46
44
42
A
0L
BUSY
L
M/
S
45
INT
L
40
38
A
1R
INT
R
36
A
3R
35
A
4R
32
A
7R
30
A
9R
34
A
5R
33
A
6R
31
A
8R
10
43
41
39
37
GND
BUSY
R
A
0R
A
2R
09
08
57
56
A
11L
A
10L
59
58
V
CC
A
12L
61
60
N/C A
13L
63
IDT7016
(16K x 9)
G68-1
68-PIN PGA
(1)
TOP VIEW
07
28
29
A
11R
A
10R
26
27
GND A
12R
24
N/C
25
A
13R
23
06
05
SEM
L
CE
L
OE
L
R/
W
L
64
62
65
04
SEM
R
20
22
CE
R
03
67
66
I/O
0L
I/O
8L
1
3
68
I/O
1L
I/O
2L
I/O
4L
2
4
I/O
3L
I/O
5L
A
B
C
5
7
9
11
13
15
GND I/O
7L
GND I/O
1R
V
CC
I/O
4R
6
8
I/O
6L
V
CC
D
E
10
12
14
16
I/O
0R
I/O
2R
I/O
3R
I/O
5R
F
G
H
J
OE
R
21
R/
R
W
02
18
19
I/O
7R
I/O
8R
17
I/O
6R
K
L
3190 drw 04
01
NOTES:
1. This text does not imply orientation of Part-Mark.
INDEX
3
IDT7016 S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAMS
PRELIMINARY
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLE: NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
Outputs
CE
H
L
L
X
NOTE:
1.
R/
W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
I/O
0-8
High-Z
DATA
IN
DATA
OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
Mode
3190 tbl 02
Condition: A0L — A13L is not equal to A0R — A13R
TRUTH TABLE: SEMAPHORE READ/WRITE CONTROL
Inputs
Outputs
CE
H
H
L
R/
W
OE
L
X
X
SEM
L
L
L
I/O
0-8
DATA
OUT
DATA
IN
Read Semaphore Flag Data Out
Write I/O
0
into Semaphore Flag
Not Allowed
Mode
u
X
H
3190 tbl 03
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Rating
Commercial
Military
–0.5 to +7.0
Unit
V
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
0 to +70
–55 to +125
–55 to +125
50
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Ambient
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
V
CC
5.0V
±
10%
5.0V
±
10%
3190 tbl 05
T
A
T
BIAS
T
STG
I
OUT
–55 to +125
–65 to +135
–65 to +150
50
°C
°C
°C
mA
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
Max. Unit
5.5
0
6.0
(2)
0.8
V
V
V
V
3190 tbl 06
NOTES:
3190 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+ 0.5V.
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz, for TQFP
Package)
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output
Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
3190 tbl 07
NOTES:
1.
This parameter is determined by device characteristics but is not
production tested.
2.
3dV references the interpolated capacitance when the input and
output signals switch from 0V to 3V or from 3V to 0V .
4
IDT7016 S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAMS
PRELIMINARY
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
7016 S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(5)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
Min.
2.4
Max.
10
10
0.4
7016 L
Min.
2.4
Max.
5
5
0.4
Unit
µA
µA
V
V
3190 tbl 08
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
NOTES:
At Vcc = 2.0V, Input leakages are undefined.
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports — TTL
Level Inputs)
Standby Current
(One Port — TTL
Level Inputs)
I
SB3
Full Standby Current
(Both Ports — All
CMOS Level Inputs)
Test
Condition
Version
MIL.
COM’L.
MIL.
COM’L.
MIL.
COM’L.
MIL.
COM’L.
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
7016X15
7016X17
COM'L ONLY COM'L ONLY
Typ.
(2)
Max. Typ.
(2)
Max. Unit
170
170
25
25
105
105
1.0
0.2
100
100
310
260
60
50
190
160
15
5
170
140
170
170
25
25
105
109
1.0
0.2
100
100
— mA
310
260
60
50
190
160
15
5
170
140
mA
mA
mA
CE
= V
IL
, Outputs Open
SEM
= V
IH
f = f
MAX(3)
I
SB1
CE
R
=
CE
L
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX(3)
I
SB2
CE
"A"
=V
IL
and
CE
"B"
= V
IH(5)
Active Port Outputs Open
f = f
MAX
(3)
mA
SEM
R
=
SEM
L
= V
IH
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
I
SB4
Full Standby Current
(One Port — All
CMOS Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Open,
MIL.
COM’L.
f = f
MAX(3)
NOTES:
3190 tbl 09
1. "X" in part numbers indicates power rating (S or L)
2. V
CC
= 5V, T
A
= +25°C, and are not production tested. I
CCDC
= 120mA(typ.)
3. At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
RC,
and using “AC Test Conditions”
of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite of port "A".
5
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参数对比
与IDT7016L17J相近的元器件有:IDT7016L17PF、IDT7016S17J、IDT7016S17PF。描述及对比如下:
型号 IDT7016L17J IDT7016L17PF IDT7016S17J IDT7016S17PF
描述 Multi-Port SRAM, 16KX9, 17ns, CMOS, PQCC68, PLASTIC, LCC-68 Multi-Port SRAM, 16KX9, 17ns, CMOS, PQFP80, PLASTIC, TQFP-80 Multi-Port SRAM, 16KX9, 17ns, CMOS, PQCC68, PLASTIC, LCC-68 Multi-Port SRAM, 16KX9, 17ns, CMOS, PQFP80, PLASTIC, TQFP-80
是否无铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 LCC QFP LCC QFP
包装说明 QCCJ, LDCC68,1.0SQ LQFP, QFP80,.64SQ QCCJ, LDCC68,1.0SQ LQFP, QFP80,.64SQ
针数 68 80 68 80
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
最长访问时间 17 ns 17 ns 17 ns 17 ns
其他特性 INTERRUPT FLAG; SEMAPHORE INTERRUPT FLAG; SEMAPHORE INTERRUPT FLAG; SEMAPHORE INTERRUPT FLAG; SEMAPHORE
I/O 类型 COMMON COMMON COMMON COMMON
JESD-30 代码 S-PQCC-J68 S-PQFP-G80 S-PQCC-J68 S-PQFP-G80
JESD-609代码 e0 e0 e0 e0
长度 24.2062 mm 14 mm 24.2062 mm 14 mm
内存密度 147456 bit 147456 bit 147456 bit 147456 bit
内存集成电路类型 MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM
内存宽度 9 9 9 9
湿度敏感等级 1 3 1 3
功能数量 1 1 1 1
端口数量 2 2 2 2
端子数量 68 80 68 80
字数 16384 words 16384 words 16384 words 16384 words
字数代码 16000 16000 16000 16000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 16KX9 16KX9 16KX9 16KX9
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
可输出 YES YES YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ LQFP QCCJ LQFP
封装等效代码 LDCC68,1.0SQ QFP80,.64SQ LDCC68,1.0SQ QFP80,.64SQ
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER FLATPACK, LOW PROFILE CHIP CARRIER FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 225 240 225 240
电源 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 4.572 mm 1.6 mm 4.572 mm 1.6 mm
最大待机电流 0.005 A 0.005 A 0.015 A 0.015 A
最小待机电流 4.5 V 4.5 V 4.5 V 4.5 V
最大压摆率 0.26 mA 0.26 mA 0.31 mA 0.31 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) TIN LEAD Tin/Lead (Sn85Pb15) TIN LEAD
端子形式 J BEND GULL WING J BEND GULL WING
端子节距 1.27 mm 0.65 mm 1.27 mm 0.65 mm
端子位置 QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 30 20 30 20
宽度 24.2062 mm 14 mm 24.2062 mm 14 mm
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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