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IDT7028L20PFG

Dual-Port SRAM, 64KX16, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100

器件类别:存储   

厂商名称:IDT (Integrated Device Technology)

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
QFP
包装说明
LFQFP,
针数
100
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
最长访问时间
20 ns
JESD-30 代码
S-PQFP-G100
JESD-609代码
e3
长度
14 mm
内存密度
1048576 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
16
湿度敏感等级
3
功能数量
1
端子数量
100
字数
65536 words
字数代码
64000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
64KX16
封装主体材料
PLASTIC/EPOXY
封装代码
LFQFP
封装形状
SQUARE
封装形式
FLATPACK, LOW PROFILE, FINE PITCH
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.6 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
MATTE TIN
端子形式
GULL WING
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
14 mm
Base Number Matches
1
文档预览
HIGH-SPEED
64K x 16 DUAL-PORT
STATIC RAM
Features
IDT7028L
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Commercial: 15/20ns (max.)
– Industrial: 20ns (max.)
Low-power operation
– IDT7028L
Active: 1W (typ.)
Standby: 1mW (typ.)
Dual chip enables allow for depth expansion without
external logic
IDT7028 easily expands data bus width to 32 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate upper-byte and lower-byte controls for multi-
plexed bus and bus matching compatibility
TTL-compatible, single 5V (±10%) power supply
Available in a 100-pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
R/
W
L
UB
L
CE
0L
CE
1L
OE
L
LB
L
R/
W
R
UB
R
CE
0R
CE
1R
OE
R
LB
R
I/O
8-15L
I/O
0-7L
BUSY
L
A
15L
A
0L
(1,2)
I/O
8-15R
I/O
Control
I/O
Control
I/O
0-7R
BUSY
R
64Kx16
MEMORY
ARRAY
7028
16
16
(1,2)
Address
Decoder
Address
Decoder
A
15R
A
0R
CE
0L
CE
1L
OE
L
R/W
L
SEM
L
INT
L
(2)
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
0R
CE
1R
OE
R
R/W
R
SEM
R
(2)
INT
R
4836 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S = V
IL
) and an output when it is a Master (M/S = V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
M/S
(2)
NOVEMBER 2001
DSC-4836/3
1
©2001 Integrated Device Technology, Inc.
IDT7028L
High-Speed 64K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT7028 is a high-speed 64K x 16 Dual-Port Static RAM. The
IDT7028 is designed to be used as a stand-alone 1024K-bit Dual-Port
RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-
more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM
approach in 32-bit or wider memory system applications results in full-
speed, error-free operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by the chip enables (CE
0
and CE
1
) permit the on-chip
circuitry of each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 1W of power.
The IDT7028 is packaged in a 100-pin Thin Quad Flatpack (TQFP).
Pin Configurations
(1,2,3)
11/19/01
INDEX
A
9L
A
10L
A
11L
A
12L
A
13L
A
14L
A
15L
NC
NC
LB
L
UB
L
CE
0L
CE
1L
SEM
L
Vcc
R/W
L
OE
L
GND
GND
I/O
15L
I/O
14L
I/O
13L
I/O
12L
I/O
11L
I/O
10L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
1
75
2
74
3
73
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
72
71
70
69
68
67
A
8L
A
7L
A
6L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
NC
INT
L
BUSY
L
GND
M/S
BUSY
R
INT
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
IDT7028PF
PN100-1
(4)
100-Pin TQFP
Top View
(5)
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
9R
A
10R
A
11R
A
12R
A
13R
A
14R
A
15R
NC
NC
LB
R
UB
R
CE
0R
CE
1R
SEM
R
GND
R/W
R
OE
R
GND
GND
I/O
15R
I/O
14R
I/O
13R
I/O
12R
I/O
11R
I/O
10R
4836 drw 02
NOTES:
1. All Vcc pins must be connected to power supply.
2. All GND pins must be connected to ground.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part marking.
I/O
9L
I/O
8L
Vcc
I/O
7
L
I/O
6L
I/O
5L
I/O
4L
I/O
3L
I/O
2L
GND
I/O1
L
I/O
0L
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
I/O
6R
Vcc
I/O
7R
I/O
8R
I/O
9R
NC
2
IDT7028L
High-Speed 64K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
CE
0L
, CE
1L
R/W
L
OE
L
A
0L
- A
15L
I/O
0L
- I/O
15L
SEM
L
UB
L
LB
L
INT
L
BUSY
L
Right Port
CE
0R
, CE
1R
R/W
R
OE
R
A
0R
- A
15R
I/O
0R
- I/O
15R
SEM
R
UB
R
LB
R
INT
R
BUSY
R
M/S
V
CC
GND
Names
Chip Enables
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Upper Byte Select
Lower Byte Select
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
4836 tbl 01
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Temperature
Under Bias
Storage
Temperature
DC Output Current
Commercial
& Industrial
-0.5 to +7.0
Military
-0.5 to +7.0
Unit
V
Recommended DC Operating
Conditions
Symbol
V
CC
GND
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
4836 tbl 04
T
BIAS
T
STG
I
OUT
-55 to +125
-65 to +150
50
-65 to +135
-65 to +150
50
o
C
C
V
IH
V
IL
____
o
mA
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
4836 tbl 02
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc + 10%.
Capacitance
Symbol
C
IN
C
OUT
(T
A
= +25°C, f = 1.0MHz)
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
4836 tbl 05
Maximum Operating Temperature
and Supply Voltage
Grade
Military
Commercial
Industrial
Ambient
Temperature
(1)
-55
O
C to +125
O
C
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
0V
Vcc
5.0V
+
10%
5.0V
+
10%
5.0V
+
10%
4836 tbl 03
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
3
6.42
IDT7028L
High-Speed 64K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I: Chip Enable
(1,2)
CE
CE
0
V
IL
L
< 0.2V
V
IH
X
H
>V
CC
-0.2V
X
CE
1
V
IH
>V
CC
-0.2V
X
V
IL
X
<0.2V
Port Selected (TTL Active)
Port Selected (CMOS Active)
Port Deselected (TTL Inactive)
Port Deselected (TTL Inactive)
Port Deselected (CMOS Inactive)
Port Deselected (CMOS Inactive)
4836 tbl 06
Mode
NOTES:
1. Chip Enable references are shown above with the actual
CE
0
and CE
1
levels,
CE
is a reference only.
2. 'H' = V
IH
and 'L' = V
IL
.
3. CMOS standby requires 'X' to be either < 0.2V or > V
CC
- 0.2V.
Truth Table II: Non-Contention Read/Write Control
Inputs
(1)
CE
(2)
H
X
L
L
L
L
L
L
X
R/W
X
X
L
L
L
H
H
H
X
OE
X
X
X
X
X
L
L
L
H
UB
X
H
L
H
L
L
H
L
X
LB
X
H
H
L
L
H
L
L
X
SEM
H
H
H
H
H
H
H
H
X
Outputs
I/O
8-15
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
High-Z
I/O
0-7
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
DATA
OUT
High-Z
Mode
Deselected: Power-Down
Both Bytes Deselected
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Read Lower Byte Only
Read Both Bytes
Outputs Disabled
4836 tbl 07
NOTES:
1. A
0L
– A
15L
A
0R
– A
15R.
2. Refer to Chip Enable Truth Table.
Truth Table III: Semaphore Read/Write Control
(1)
Inputs
(1)
CE
(2)
H
X
H
X
L
L
R/W
H
H
X
X
OE
L
L
X
X
X
X
UB
X
H
X
H
L
X
LB
X
H
X
H
X
L
SEM
L
L
L
L
L
L
Outputs
I/O
8-15
DATA
OUT
DATA
OUT
DATA
IN
DATA
IN
______
I/O
0-7
DATA
OUT
DATA
OUT
DATA
IN
DATA
IN
______
Mode
Read Data in Semaphore Flag
Read Data in Semaphore Flag
Write I/O
0
into Semaphore Flag
Write I/O
0
into Semaphore Flag
Not Allowed
Not Allowed
4836 tbl 08
______
______
NOTES:
1. There are eight semaphore flags written to via I/O
0
and read from all the I/Os (I/O
0
-I/O
15
). These eight semaphore flags are addressed by A
0
-A
2
.
2. Refer to Chip Enable Truth Table.
4
IDT7028L
High-Speed 64K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(2)
(V
CC
= 5.0V ± 10%)
7028L
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
Min.
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
4836 tbl 09
___
___
2.4
NOTES:
1. At Vcc < 2.0V, input leakages are undefined.
2. Refer to Chip Enable Truth Table.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(5)
(V
CC
= 5.0V ± 10%)
7028L15
Com'l Only
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL Level
Inputs)
Standby Current
(One Port - TTL Level
Inputs)
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
Test Condition
CE
= V
IL
, Outputs Disabled
SEM
= V
IH
f = f
MAX
(2)
CE
L
=
CE
R
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(2)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(4)
Active Port Outputs Disabled,
f=f
MAX
(2)
,
SEM
R
=
SEM
L
= V
IH
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V, V
IN
> V
CC
- 0.2V
or V
IN
< 0.2V, f = 0
(3)
SEM
R
=
SEM
L
> V
CC
- 0.2V
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(4)
,
SEM
R
=
SEM
L
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V,
Active Port Outp uts Disabled , f = f
MAX
(2)
Version
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
L
L
L
L
L
L
L
L
L
L
Typ.
(1)
Max
220
____
7028L20
Com'l & Ind
Typ.
(1)
Max
200
200
50
50
130
130
0.2
0.2
120
120
300
360
75
120
195
235
3.0
3.0
190
230
4836 tbl 10
Unit
mA
340
____
I
SB1
65
____
100
____
mA
I
SB2
145
____
225
____
mA
I
SB3
0.2
____
3.0
____
mA
I
SB4
135
____
220
____
mA
NOTES:
1. V
CC
= 5V, T
A
= +25°C, and are not production tested. I
CCDC
= 120mA (Typ.)
2. At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/ t
RC,
and using “AC Test Conditions” of input
levels of GND to 3V.
3. f = 0 means no address or control lines change.
4. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
5. Refer to Chip Enable Truth Table.
5
6.42
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参数对比
与IDT7028L20PFG相近的元器件有:IDT7028L15PF9、IDT7028L20PF9。描述及对比如下:
型号 IDT7028L20PFG IDT7028L15PF9 IDT7028L20PF9
描述 Dual-Port SRAM, 64KX16, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX16, 15ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX16, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
是否无铅 不含铅 含铅 含铅
是否Rohs认证 符合 不符合 不符合
零件包装代码 QFP QFP QFP
包装说明 LFQFP, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
针数 100 100 100
Reach Compliance Code compliant compli compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
最长访问时间 20 ns 15 ns 20 ns
JESD-30 代码 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100
JESD-609代码 e3 e0 e0
长度 14 mm 14 mm 14 mm
内存密度 1048576 bit 1048576 bi 1048576 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 16 16 16
湿度敏感等级 3 3 3
功能数量 1 1 1
端子数量 100 100 100
字数 65536 words 65536 words 65536 words
字数代码 64000 64000 64000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C
组织 64KX16 64KX16 64KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP
封装形状 SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 240 240
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 MATTE TIN TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD
处于峰值回流温度下的最长时间 30 20 20
宽度 14 mm 14 mm 14 mm
Base Number Matches 1 1 1
厂商名称 IDT (Integrated Device Technology) - IDT (Integrated Device Technology)
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