HIGH-SPEED 3.3V
16K x 8 DUAL-PORT
STATIC RAM
Features
◆
◆
IDT70V06S/L
◆
◆
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Commercial: 15/20/25/35/55ns (max.)
– Industrial: 20/25ns (max.)
Low-power operation
– IDT70V06S
Active: 400mW (typ.)
Standby: 3.3mW (typ.)
– IDT70V06L
Active: 380mW (typ.)
Standby: 660µW (typ.)
IDT70V06 easily expands data bus width to 16 bits or more
using the Master/Slave select when cascading more than
one device
◆
◆
◆
◆
◆
◆
◆
◆
◆
M/S = V
IH
for
BUSY
output flag on Master
M/S = V
IL
for
BUSY
input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Battery backup operation—2V data retention
TTL-compatible, single 3.3V (±0.3V) power supply
Available in 68-pin PGA and PLCC, and a 64-pin TQFP
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Functional Block Diagram
OE
L
CE
L
R/W
L
OE
R
CE
R
R/W
R
I/O
0L
- I/O
7L
I/O
Control
BUSY
L
A
13L
A
0L
(1,2)
,
I/O
Control
I/O
0R
-I/O
7R
BUSY
R
A
13R
A
0R
(1,2)
Address
Decoder
14
MEMORY
ARRAY
14
Address
Decoder
CE
L
OE
L
R/W
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
L
(2)
INT
L
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull.
M/S
SEM
R
INT
R
(2)
2942 drw 01
OCTOBER 2008
1
DSC-2942/9
©2008 Integrated Device Technology, Inc.
6.07
IDT70V06S/L
High-Speed 3.3V 16K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT70V06 is a high-speed 16K x 8 Dual-Port Static RAM. The
IDT70V06 is designed to be used as a stand-alone 128K-bit Dual-Port
Static RAM or as a combination MASTER/SLAVE Dual-Port Static
RAM for 16-bit-or-more word systems. Using the IDT MASTER/
SLAVE Dual-Port Static RAM approach in 16-bit or wider memory
system applications results in full-speed, error-free operation without
the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by
CE
permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 400mW of power.
The IDT70V06 is packaged in a ceramic 68-pin PGA and PLCC
and a 64-pin thin quad flatpack (TQFP).
Pin Configurations
(1,2,3)
11/29/01
INDEX
I/O
2L
I/O
3L
I/O
4L
I/O
5L
V
SS
I/O
6L
I/O
7L
V
DD
V
SS
I/O
0R
I/O
1R
I/O
2R
V
DD
I/O
3R
I/O
4R
I/O
5R
I/O
6R
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
I/O
1L
I/O
0L
N/C
OE
L
R/W
L
SEM
L
CE
L
N/C
A
13L
V
DD
A
12L
A
11L
A
10L
A
9L
A
8L
A
7L
A
6L
9
8
7
6
5
4
3
2
1 68 67 66 65 64 63 62 61
60
59
58
57
56
IDT70V06J
J68-1
(4)
68-Pin PLCC
Top View
(5)
55
54
53
52
51
50
49
48
47
46
45
44
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
L
BUSY
L
V
SS
M/S
BUSY
R
INT
R
A
0R
A
1R
A
2R
A
3R
A
4R
2942 drw 02
,
I/O
7R
N/C
OE
R
R/W
R
SEM
R
CE
R
N/C
A
13R
Vss
A
12R
A
11R
A
10R
A
9R
A
8R
A
7R
A
6R
A
5R
I/O
1L
I/O
0L
OE
L
R/W
L
A
13L
V
DD
A
12L
A
11L
A
10L
A
9L
A
8L
56
55
53
52
54
INDEX
61
60
64
58
57
59
51
50
63
62
49
A
7L
A
6L
A
5L
11/29/01
SEM
L
CE
L
I/O
2L
I/O
3L
I/O
4L
I/O
5L
V
SS
I/O
6L
I/O
7L
V
DD
V
SS
I/O
0R
I/O
1R
I/O
2R
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
48
47
46
45
44
43
42
41
40
39
38
37
36
35
A
4L
A
3L
A
2L
A
1L
A
0L
INT
L
BUSY
L
V
SS
M/S
BUSY
R
INT
R
A
0R
A
1R
A
2R
A
3R
A
4R
2942 drw 03
70V06PF
PN-64
(4)
64-Pin TQFP
Top View
(5)
,
R/W
R
SEM
R
NOTES:
1. All V
DD
pins must be connected to power supply.
2. All V
SS
pins must be connected to ground supply.
3. J68-1 package body is approximately .95 in x .95 in x .17 in
PN-64 package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part marking.
20
21
22
26
27
28
I/O
6R
I/O
7R
25
CE
R
A
13R
V
SS
A
12R
A
11R
A
10R
OE
R
A
9R
A
8R
A
7R
A
6R
2
A
5R
32
16
17
18
19
23
24
29
30
31
I/O
3R
I/O
4R
I/O
5R
34
33
IDT70V06S/L
High-Speed 3.3V 16K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Configurations
(1,2,3)
(con't.)
01/03/02
11
53
A
7L
55
A
9L
51
A
5L
52
A
6L
54
A
8L
50
A
4L
49
A
3L
48
A
2L
47
A
1L
46
44
42
A
0L
BUSY
L
M/S
45
43
INT
L
V
SS
40
38
INT
R
A
1R
36
A
3R
35
A
4R
32
A
7R
30
A
9R
28
A
11R
26
V
SS
24
N/C
34
A
5R
33
A
6R
31
A
8R
29
A
10R
27
A
12R
25
A
13R
10
41
39
37
BUSY
R
A
0R
A
2R
09
08
57
56
A
11L
A
10L
59
V
DD
61
N/C
58
A
12L
60
A
13L
07
IDT70V06G
G68-1
(4)
68-Pin PGA
Top View
(5)
06
05
63
62
SEM
L
CE
L
65
64
OE
L
R/W
L
67
66
I/O
0L
N/C
1
3
5
I/O
2L
I/O
4L
V
SS
2
4
Names
I/O
5L
I/O
3L
C
04
22
23
SEM
R
CE
R
20
OE
R
7
9
I/O
7L
V
SS
11
13
I/O
1R
V
DD
21
R/W
R
03
68
02 I/O
1L
15
18
19
I/O
4R
I/O
7R
N/C
17
I/O
6R
K
L
2942 drw 04
Left Port
CE
L
R/W
L
OE
L
A
0L
- A
13L
I/O
0L
- I/O
7L
SEM
L
INT
L
BUSY
L
CE
R
Right Port
01
6
8
10
12
14
16
I/O
6L
V
DD
I/O
0R
I/O
2R
I/O
3R
I/O
5R
D
E
F
G
H
J
,
R/W
R
OE
R
Chip Enable
A
B
INDEX
Read/Write Enable
Output Enable
NOTES:
A
V
-
pins
Address
1. All
0R
DD
A
13R
must be connected to power supply.
2. All V
0R
-
pins
7R
I/O
SS
I/O
must be connected to ground supply.
Data Input/Output
3. Package body is approximately 1.18 in x 1.18 in x .16 in.
4. This package code is used to reference the package diagram.
Semaphore Enable
SEM
R
5. This text does not indicate orientation of the actual part marking.
Pin Names
INT
R
Interrupt Flag
Busy Flag
Master or Slave Select
Power (3.3V)
Ground (0V)
2942 tbl 01
BUSY
R
M/S
V
DD
V
SS
6.42
3
IDT70V06S/L
High-Speed 3.3V 16K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs
(1)
CE
H
L
L
X
R/W
Outputs
OE
X
X
L
H
SEM
H
H
H
X
I/O
0-7
High-Z
DATA
IN
DATA
OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
2942 tbl 02
Mode
X
L
H
X
NOTE:
1. A
0L
— A
13L
≠
A
0R
— A
13R
Truth Table II: Semaphore Read/Write Control
(1)
Inputs
CE
H
H
L
R/W
H
↑
X
OE
L
X
X
SEM
L
L
L
Outputs
I/O
0-7
DATA
OUT
DATA
IN
____
Mode
Read Data in Semaphore Flag
Write I/O
0
into Semaphore Flag
Not Allowed
2942 tbl 03
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from I/O
0
- I/O
7
. These eight semaphores are addressed by A
0
- A
2
.
4
IDT70V06S/L
High-Speed 3.3V 16K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
& Industrial
-0.5 to +4.6
Unit
V
Maximum Operating Temperature
and Supply Voltage
(1)
Grade
Commercial
Industrial
Ambient Temperature
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
V
DD
3.3V
+
0.3V
3.3V
+
0.3V
2942 tbl 05
T
BIAS
T
STG
I
OUT
-55 to +125
-65 to +150
50
o
C
C
o
NOTE:
1. This is the parameter T
A
. This is the "instant on" case temperature.
mA
2942 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V
TERM
must not exceed V
DD
+ 0.3V.
Recommended DC Operating
Conditions
Symbol
V
DD
V
SS
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
-0.3
(1)
Typ.
3.3
0
____
____
Max.
3.6
0
V
DD
+0.3
(2)
0.8
Unit
V
V
V
V
2942 tbl 06
Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
2942 tbl 07
V
IH
V
IL
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed V
DD
+0.3V.
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
DD
= 3.3V ± 0.3V)
70V06S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
DD
= 3.6V, V
IN
= 0
V
to V
DD
V
OUT
= 0V to V
DD
I
OL
= +4mA
I
OH
= -4mA
Min.
___
70V06L
Min.
___
Max.
10
10
0.4
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
2942 tbl 08
___
___
___
___
2.4
2.4
NOTE:
1. At V
DD
< 2.0V input leakages are undefined.
6.42
5
嵌入式系统
