首页 > 器件类别 > 存储

IDT70V07S55JG8

Dual-Port SRAM, 32KX8, 55ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68

器件类别:存储   

厂商名称:IDT (Integrated Device Technology)

器件标准:  

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
LCC
包装说明
QCCJ,
针数
68
Reach Compliance Code
compliant
ECCN代码
EAR99
最长访问时间
55 ns
其他特性
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
JESD-30 代码
S-PQCC-J68
JESD-609代码
e3
长度
24.2062 mm
内存密度
262144 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
8
功能数量
1
端口数量
2
端子数量
68
字数
32768 words
字数代码
32000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
32KX8
输出特性
3-STATE
可输出
YES
封装主体材料
PLASTIC/EPOXY
封装代码
QCCJ
封装形状
SQUARE
封装形式
CHIP CARRIER
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
4.572 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
MATTE TIN
端子形式
J BEND
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
24.2062 mm
Base Number Matches
1
文档预览
HIGH-SPEED 3.3V
32K x 8 DUAL-PORT
STATIC RAM
Features
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 25/35/55ns (max.)
– Industral: 25ns (max.)
Low-power operation
– IDT70V07S
Active: 300mW (typ.)
Standby: 3.3mW (typ.)
– IDT70V07L
Active: 300mW (typ.)
Standby: 660
µ
W (typ.)
Interrupt Flag
IDT70V07S/L
IDT70V07 easily expands data bus width to 16 bits or more
using the Master/Slave select when cascading more than
one device
M/S = V
IH
for
BUSY
output flag on Master
M/S = V
IL
for
BUSY
input on Slave
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 3.3V (±0.3V) power supply
Available in 68-pin PGA and PLCC, and a 80-pin TQFP
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Functional Block Diagram
OE
L
CE
L
R/W
L
OE
R
CE
R
R/W
R
I/O
0L
- I/O
7L
I/O
Control
BUSY
L
A
14L
A
0L
(1,2)
I/O
Control
I/O
0R
-I/O
7R
,
BUSY
R
Address
Decoder
15
(1,2)
MEMORY
ARRAY
15
Address
Decoder
A
14R
A
0R
CE
L
OE
L
R/W
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
L
(2)
INT
L
M/S
SEM
R
INT
R(2)
2943 drw 01
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
and
INT
outputs are non-tri-stated push-pull.
OCTOBER 2004
1
DSC 2943/6
©2004 Integrated Device Technology, Inc.
IDT70V07S/L
High-Speed 32K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT70V07 is a high-speed 32K x 8 Dual-Port Static RAM. The
IDT70V07 is designed to be used as a stand-alone 256K-bit Dual-Port
RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-
or-more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM
approach in 16-bit or wider memory system applications results in full-
speed, error-free operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by
CE
permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 300mW of power.
The IDT70V07 is packaged in a ceramic 68-pin PGA and PLCC and
a 80-pin thin quad flatpack (TQFP).
Pin Configurations
(1,2,3)
10/25/01
INDEX
I/O
2L
I/O
3L
I/O
4L
I/O
5L
GND
I/O
6L
I/O
7L
V
CC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
I/O
1L
I/O
0L
N/C
OE
L
R/W
L
SEM
L
CE
L
A
14L
A
13L
V
CC
A
12L
A
11L
A
10L
A
9L
A
8L
A
7L
A
6L
9
8
7
6
5
4
3
2
1 68 67 66 65 64 63 62 61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
IDT70V07J
J68-1
(4)
68-Pin PLCC
Top View
(5)
44
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
L
BUSY
L
GND
M/S
BUSY
R
INT
R
A
0R
A
1R
A
2R
A
3R
A
4R
2943 drw 02
10
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground.
3. J68-1 package body is approximately .95 in x .95 in x .17 in.
PN80-1 package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
I/O
7R
N/C
OE
R
R/W
R
SEM
R
CE
R
A
14R
A
13R
GND
A
12R
A
11R
A
10R
A
9R
A
8R
A
7R
A
6R
A
5R
2
IDT70V07S/L
High-Speed 32K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Configurations
(1,2,3)
(con't.)
10/25/01
51
11
53
A
7L
55
A
9L
A
5L
52
A
6L
54
A
8L
50
A
4L
49
A
3L
48
A
2L
47
A
1L
46
44
42
A
0L
BUSY
L
M/S
40
38
INT
R
A
1R
36
A
3R
35
A
4R
32
A
7R
30
A
9R
34
A
5R
33
A
6R
31
A
8R
10
45
43
41
39
37
INT
L
GND
BUSY
R
A
0R
A
2R
09
08
57
56
A
11L
A
10L
59
58
V
CC
A
12L
61
60
A
13L
07
IDT70V07G
G68-1
(4)
68-Pin PGA
Top View
(5)
28
29
A
11R
A
10R
26
GND
27
A
12R
06
A
14L
05
63
62
SEM
L
CE
L
24
25
A
14R
A
13R
22
23
SEM
R
CE
R
20
OE
R
21
R/W
R
65
64
04
OE
L
R/W
L
03
67
66
I/O
0L
N/C
1
3
68
I/O
1L
I/O
2L
I/O
4L
2
01
A
INDEX
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground.
3. Package body is approximately 1.18 in x 1.18 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
02
5
7
9
11
13
15
GND I/O
7L
GND I/O
1R
V
CC
I/O
4R
6
I/O
6L
D
8
10
12
14
16
V
CC
I/O
0R
I/O
2R
I/O
3R
I/O
5R
E
F
G
H
J
18
19
I/O
7R
N/C
17
I/O
6R
K
,
4
I/O
3L
I/O
5L
B
C
L
2943 drw 04
Pin Names
Left Port
CE
L
R/W
L
OE
L
A
0L
- A
14L
I/O
0L
- I/O
7L
SEM
L
INT
L
BUSY
L
Right Port
CE
R
R/W
R
OE
R
A
0R
- A
14R
I/O
0R
- I/O
7R
SEM
R
INT
R
BUSY
R
M/S
V
CC
GND
Names
Chip Enable
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Interrupt Flag
Busy Flag
Master or Slave Select
Power (3.3V)
Ground (0V)
2943 tbl 01
3
IDT70V07S/L
High-Speed 32K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs
(1)
CE
H
L
L
X
R/W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
Outputs
I/O
0-7
High-Z
DATA
IN
DATA
OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
2943 tbl 02
Mode
NOTE:
1. A
0L
— A
14L
A
0R
— A
14R
Truth Table II: Semaphore Read/Write Control
Inputs
(1)
CE
H
H
L
R/W
H
X
OE
L
X
X
SEM
L
L
L
Outputs
I/O
0-7
DATA
OUT
DATA
IN
____
Mode
Read Data in Semaphore Flag
Write I/O
0
into Semaphore Flag
Not Allowed
2943 tbl 03
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O's (I/O
0
-I/O
7
). These eight semaphores are addressed by A
0
-A
2
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect to GND
Temperature Under Bias
StorageTemperature
Junction Temperature
DC Output Current
Commercial
& Industrial
-0.5 to +4.6
-55 to +125
-65 to +150
+150
50
Unit
V
o
o
o
Maximum Operating Temperature
and Supply Voltage
(1)
Grade
Commercial
Industrial
Ambient Temperature
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
Vcc
3.3V
+
0.3
3.3V
+
0.3
2943 tbl 05
T
BIAS
(3)
T
STG
T
JN
I
OUT
C
C
C
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
mA
2943 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.3V.
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected.
Recommended DC Operating
Conditions
(2)
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
-0.3
(1)
Typ.
3.3
0
____
Max.
3.6
0
V
CC
+0.3
(2)
0.8
Unit
V
V
V
V
2943 tbl 06
Capacitance
(1)
Symbol
C
IN
C
OUT
(2)
(T
A
= +25°C, f = 1.0MHz) TQFP Only
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
9
10
Unit
pF
pF
2943 tbl 07
____
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.3V.
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. C
OUT
also references C
I/O
.
4
IDT70V07S/L
High-Speed 32K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
CC
= 3.3V ± 0.3V)
70V07S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 3.6V, V
IN
= 0V to V
CC
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= +4mA
I
OH
= -4mA
Min.
___
70V07L
Min.
___
Max.
10
10
0.4
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
2943 tbl 08
___
___
___
___
2.4
2.4
NOTE:
1. At V
CC
< 2.0V, input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1)
(V
CC
= 3.3V ± 0.3V)
70V07X25
Com'l
& Ind
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
Test Condition
CE
= V
IL
, Outputs Disabled
SEM
= V
IL
f = f
MAX
(3)
Version
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
Typ.
(2)
100
100
____
70V07X35
Com'l Only
Typ.
(2)
90
90
____
____
70V07X55
Com'l Only
Typ.
(2)
90
90
____
____
Max.
170
140
____
Max.
140
120
____
____
Max.
140
120
____
____
Unit
mA
100
14
12
____
185
30
24
____
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
R
=
CE
L
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(3)
12
10
____
____
30
24
____
____
12
10
____
____
30
24
____
____
mA
12
50
50
____
50
95
85
____
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
=
SEM
L
= V
IH
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled,
f = f
MAX
(3)
45
45
____
____
87
75
____
____
45
45
____
____
87
75
____
____
mA
50
1.0
0.2
____
105
6
3
____
I
SB3
Full Standby Current
(Both Ports -
CMOS Level Inputs)
1.0
0.2
____
____
6
3
____
____
1.0
0.2
____
____
6
3
____
____
mA
0.2
60
60
____
3
90
80
____
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
55
55
____
____
85
74
____
____
55
55
____
____
85
74
____
____
mA
60
90
NOTES:
1. 'X' in part number indicates power rating (S or L).
2. V
CC
= 3.3V, T
A
= +25°C, and are not production tested. I
CCDC
= 80mA (Typ.)
3. At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/ t
RC,
and using “AC Test Conditions" of input levels
of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
2943 tbl 09
5
查看更多>
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消