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IDT70V9349L7PFGI8

Dual-Port SRAM, 4KX18, 18ns, CMOS, PQFP100, TQFP-100

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
QFP
包装说明
TQFP-100
针数
100
Reach Compliance Code
compliant
ECCN代码
EAR99
最长访问时间
18 ns
其他特性
FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码
S-PQFP-G100
JESD-609代码
e3
长度
14 mm
内存密度
73728 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
18
湿度敏感等级
3
功能数量
1
端子数量
100
字数
4096 words
字数代码
4000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
4KX18
封装主体材料
PLASTIC/EPOXY
封装代码
LFQFP
封装形状
SQUARE
封装形式
FLATPACK, LOW PROFILE, FINE PITCH
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.6 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
MATTE TIN
端子形式
GULL WING
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
14 mm
文档预览
HIGH-SPEED 3.3V 8/4K x 18
SYNCHRONOUS PIPELINED
DUAL-PORT STATIC RAM
Features:
IDT70V9359/49L
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 6.5/7.5/9ns (max.)
– Industrial: 7.5ns (max.)
Low-power operation
– IDT70V9359/49L
Active: 450mW (typ.)
Standby: 1.5mW (typ.)
Flow-Through or Pipelined output mode on either port via
the
FT/PIPE
pins
Counter enable and reset features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 3.5ns setup to clock and 0ns hold on all control, data, and
address inputs
– Data input, address, and control registers
– Fast 6.5ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 10ns cycle time, 100MHz operation in Pipelined output mode
Separate upper-byte and lower-byte controls for
multiplexed bus and bus matching compatibility
LVTTL- compatible, single 3.3V (±0.3V) power supply
Industrial temperature range (–40°C to +85°C) is
available for 83 MHz
Available in a 100-pin Thin Quad Flatpack (TQFP) and 100-
pin Fine Pitch Ball Grid Array (fpBGA) packages.
Functional Block Diagram
R/
W
L
UB
L
CE
0L
R/
W
R
UB
R
CE
0R
CE
1L
LB
L
OE
L
1
0
0/1
1
0
0/1
CE
1R
LB
R
OE
R
FT
/PIPE
L
0/1
1b 0b
b a
1a 0a
0a 1a
a
b
0b 1b
0/1
FT
/PIPE
R
I/O
9L
-I/O
17L
I/O
0L
-I/O
8L
I/O
Control
I/O
9R
-I/O
17R
I/O
Control
I/O
0R
-I/O
8R
A
12L
(1)
A
0L
CLK
L
Counter/
Address
Reg.
MEMORY
ARRAY
Counter/
Address
Reg.
A
12R
(1)
A
0R
CLK
R
ADS
L
CNTEN
L
CNTRST
L
ADS
R
CNTEN
R
CNTRST
R
5638 drw 01
NOTE:
1. A
12
is a NC for IDT70V9349.
AUGUST 2003
1
©2003 Integrated Device Technology, Inc.
DSC-5638/3
IDT70V9359/49L
High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
The IDT70V9359/49 is a high-speed 8/4K x 18 bit synchronous
Dual-Port RAM. The memory array utilizes Dual-Port memory cells
to allow simultaneous access of any address from both ports.
Registers on control, data, and address inputs provide minimal setup
and hold times. The timing latitude provided by this approach allows
systems to be designed with very short cycle times.
Description:
With an input data register, the IDT70V9359/49 has been optimized for
applications having unidirectional or bidirectional data flow in bursts. An
automatic power down feature, controlled by
CE
0
and CE
1,
permits the
on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 450mW of power.
Pin Configurations
(1,2,3,4)
07/03/02
Index
A
9L
A
10L
A
11L
A
12L
(1)
NC
NC
NC
LB
L
UB
L
CE
0L
CE
1L
CNTRST
L
R/W
L
OE
L
V
DD
FT/PIPE
L
I/O
17L
I/O
16L
V
SS
I/O
15L
I/O
14L
I/O
13L
I/O
12L
I/O
11L
I/O
10L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
75
2
74
3
73
1
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
A
8L
A
7L
A
6L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
CNTEN
L
CLK
L
ADS
L
V
SS
Vss
ADS
R
CLK
R
CNTEN
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
70V9359/49PF
PN100-1
(5)
100-Pin TQFP
Top View
(6)
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
8R
A
9R
A
10R
A
11R
A
12R
(1)
NC
NC
NC
LB
R
UB
R
CE
0R
CE
1R
CNTRST
R
R/W
R
V
SS
OE
R
FT/PIPE
R
I/O
17R
V
SS
I/O
16R
I/O
15R
I/O
14R
I/O
13R
I/O
12R
I/O
11R
.
I/O
9L
I/O
8L
V
DD
I/O
7L
I/O
6L
I/O
5L
I/O
4L
I/O
3L
I/O
2L
V
SS
I/O
1L
I/O
0L
V
SS
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
I/O
6R
V
DD
I/O
7R
I/O
8R
I/O
9R
I/O
10R
NOTES:
1. A
12
is a NC for IDT70V9349.
2. All V
DD
pins must be connected to power supply.
3. All V
SS
pins must be connected to ground supply.
4. Package body is approximately 14mm x 14mm x 1.4mm.
5. This package code is used to reference the package diagram.
6. This text does not indicate orientation of the actual part-marking.
5638 drw 02
6.42
2
IDT70V9359/49L
High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Pin Configurations(cont'd)
(1,2,3,4)
70V9359/49BF
BF100
(5)
100-Pin fpBGA
Top View
(6)
A2
A3
A4
CNTRST
R
07/03/02
A1
A5
A6
A7
A8
A9
A10
A
8R
B1
A
11R
B2
UB
R
B3
Vss
B5
Vss
B6
B7
Vss
I/O
13R
I/O
10R
I/O
17R
B8
B9
B10
B4
A
6R
C1
A
7R
C2
A
10R
C3
A
12R
(1)
C4
R/W
R
OE
R
PL/FT
R
I/O
12R
I/O
9R
I/O
6R
C5
C6
C7
C8
C9
C10
A
3R
D1
A
4R
D2
A
5R
D3
A
9R
D4
CE
1R
I/O
16R
I/O
15R
I/O
11R
I/O
7R
I/O
3R
D5
D6
D7
D8
D9
D10
A
0R
E1
CLK
R
E2
A
1R
E3
CNTEN
R
F3
A
2R
E4
LB
R
E5
CE
0R
I/O
14R
I/O
8R
I/O
5R
I/O
1R
E6
E7
E8
E9
E10
Vss
F1
ADS
R
F2
A
1L
F4
ADS
L
F5
Vss
F6
I/O
4R
I/O
2R
I/O
0R
F7
F8
F9
V
DD
F10
Vss
G1
CNTEN
L
H1
CLK
L
G2
A
0L
G3
A
3L
G4
V
DD
G5
Vss
G6
V
DD
G7
I/O
2L
G8
I/O
1L
G9
I/O
0L
G10
A
4L
H2
A
7L
H3
UB
L
H4
H5
Vss
I/O
13L
H6
NC
H7
I/O
4L
H8
Vss
H9
I/O
3L
H10
,
A
2L
J1
A
6L
J2
A
11L
J3
CE
0L
J4
CNTRST
L
I/O
15L
I/O
9L
I/O
7L
J6
J7
J8
I/O
6L
J9
I/O
5L
J10
J5
A
5L
K1
A
9L
K2
A
12L
(1)
K3
R/W
L
K4
OE
L
PL/FT
L
I/O
12L
I/O
10L
K5
K6
K7
K8
Vss
K9
I/O
8L
K10
A
8L
A
10L
LB
L
CE
1L
V
DD
V
DD
I/O
16L
I/O
14L
I/O
11L
I/O
17L
5638 drw 03
NOTES:
1. A
12
is a NC for IDT70V9349.
2. All V
DD
pins must be connected to power supply.
3. All V
SS
pins must be connected to ground supply.
4. Package body is approximately 10mm x 10mm x 1.4mm with 0.8mm ball pitch.
5. This package code is used to reference the package diagram.
6. This text does not indicate orientation of the actual part-marking.
6.42
3
IDT70V9359/49L
High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
CE
0L,
CE
1L
R/W
L
OE
L
A
0L
- A
12L
(1)
I/O
0L
- I/O
17L
CLK
L
UB
L
LB
L
ADS
L
CNTEN
L
CNTRST
L
FT/PIPE
L
Right Port
CE
0R,
CE
1R
R/W
R
OE
R
A
0R
- A
12R
(1)
I/O
0R
- I/O
17R
CLK
R
UB
R
LB
R
ADS
R
CNTEN
R
CNTRST
R
FT/PIPE
R
V
DD
V
SS
Names
Chip Enables
(3)
Read/Write Enable
Output Enable
Address
Data Input/Output
Clock
Upper Byte Select
(2)
Lower Byte Select
(2)
Address Strobe Enable
Counter Enable
Counter Reset
Flow-Through / Pipeline
Power (3.3V)
Ground (0V)
5638 tbl 01
NOTE:
1. A
12
is a NC for IDT70V9349.
2.
LB
and
UB
are single buffered regardless of state of
FT/PIPE.
3.
CEo
and CE
1
are single buffered when
FT/PIPE
= V
IL
,
CEo
and CE
1
are double buffered when
FT/PIPE
= V
IH
,
i.e. the signals take two cycles to deselect.
Truth Table I—Read/Write and Enable Control
(1,2,3)
OE
X
X
X
X
X
X
L
L
L
H
CLK
X
CE
0
(5)
H
X
L
L
L
L
L
L
L
L
CE
1
(5)
X
L
H
H
H
H
H
H
H
H
UB
(4)
X
X
H
L
H
L
L
H
L
X
LB
(4)
X
X
H
H
L
L
H
L
L
X
R/W
X
X
X
L
L
L
H
H
H
X
Upper Byte
I/O
9-17
High-Z
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
High-Z
Lower Byte
I/O
0-8
High-Z
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
DATA
OUT
High-Z
Deselected–Power Down
Deselected–Power Down
Both Bytes Deselected
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Read Lower Byte Only
Read Both Bytes
Outputs Disabled
5638 tbl 02
MODE
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
ADS, CNTEN, CNTRST
= X.
3.
OE
is an asynchronous input signal.
4
LB
and
UB
are single buffered regardless of state of
FT/PIPE.
5.
CEo
and CE
1
are single buffered when
FT/PIPE
= V
IL
.
CEo
and CE
1
are double buffered when
FT/PIPE
= V
IH
, i.e. the signals take two cycles to deselect.
6.42
4
IDT70V9359/49L
High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Truth Table II—Address Counter Control
(1,2)
External
Address
An
X
X
X
Previous
Internal
Address
X
An
An + 1
X
Internal
Address
Used
An
An + 1
An + 1
A
0
CLK
ADS
L
(4)
H
H
X
CNTEN
X
L
(5)
H
X
CNTRST
H
H
H
L
(4)
I/O
(3)
D
I/O
(n)
D
I/O
(n+1)
D
I/O
(n+1)
D
I/O
(0)
External Address Used
Counter Enabled—Internal Address generation
External Address Blocked—Counter disabled (An + 1 reused)
Counter Reset to Address 0
5638 tbl 03
MODE
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
CE
0
,
LB, UB,
and
OE
= V
IL
; CE
1
and R/W = V
IH
.
3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle.
4.
ADS
and
CNTRST
are independent of all other signals including
CE
0
, CE
1
,
UB
and
LB.
5. The address counter advances if
CNTEN
= V
IL
on the rising edge of CLK, regardless of all other signals including
CE
0
, CE
1
,
UB
and
LB.
Recommended Operating
Temperature and Supply Voltage
Grade
Commercial
Industrial
Ambient
Temperature
(1)
0 C to +70 C
O
O
Recommended DC Operating
Conditions
Symbol
V
DD
V
SS
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
-0.3
(1)
Typ.
3.3
0
____
____
GND
0V
0V
V
DD
3.3V
+
0.3V
3.3V
+
0.3V
5638 tbl 04
Max.
3.6
0
V
DD
+0.3V
(2)
0.8
Unit
V
V
V
V
5638 tbl 05
-40 C to +85 C
O
O
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
NOTES:
1. V
IL
> -1.5V for pulse width less than 10 ns.
2. V
TERM
must not exceed V
DD
+0.3V.
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Capacitance
(1)
Unit
V
Rating
Terminal Voltage
with Respect to
GND
Temperature
Under Bias
Storage
Temperature
DC Output Current
Commercial
& Industrial
-0.5 to +4.6
(T
A
= +25°C, f = 1.0MH
Z
)
Symbol
C
IN
C
OUT
(3)
Parameter
Input Capacitance
Output Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
5638 tbl 07
T
BIAS
T
STG
I
OUT
-55 to +125
-65 to +150
50
o
C
C
o
mA
5638 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
DD
+0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> V
DD
+ 0.3V.
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. C
OUT
also references C
I/O
.
6.42
5
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参数对比
与IDT70V9349L7PFGI8相近的元器件有:IDT70V9349L6PFG8、IDT70V9349L9PFG8、IDT70V9349L7PFG8、IDT70V9359L9PFG8。描述及对比如下:
型号 IDT70V9349L7PFGI8 IDT70V9349L6PFG8 IDT70V9349L9PFG8 IDT70V9349L7PFG8 IDT70V9359L9PFG8
描述 Dual-Port SRAM, 4KX18, 18ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 4KX18, 15ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 4KX18, 20ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 4KX18, 18ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 8KX18, 20ns, CMOS, PQFP100, TQFP-100
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 QFP QFP QFP QFP QFP
包装说明 TQFP-100 TQFP-100 TQFP-100 TQFP-100 LFQFP,
针数 100 100 100 100 100
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 18 ns 15 ns 20 ns 18 ns 20 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100
JESD-609代码 e3 e3 e3 e3 e3
长度 14 mm 14 mm 14 mm 14 mm 14 mm
内存密度 73728 bit 73728 bit 73728 bit 73728 bit 147456 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 18 18 18 18 18
湿度敏感等级 3 3 3 3 3
功能数量 1 1 1 1 1
端子数量 100 100 100 100 100
字数 4096 words 4096 words 4096 words 4096 words 8192 words
字数代码 4000 4000 4000 4000 8000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 70 °C 70 °C 70 °C
组织 4KX18 4KX18 4KX18 4KX18 8KX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP LFQFP LFQFP
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 30 30 30 30 30
宽度 14 mm 14 mm 14 mm 14 mm 14 mm
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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