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IDT7130LA55JI

Dual-Port SRAM, 1KX8, 55ns, CMOS, PQCC52, PLASTIC, LCC-52

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
LCC
包装说明
PLASTIC, LCC-52
针数
52
Reach Compliance Code
not_compliant
ECCN代码
EAR99
最长访问时间
55 ns
I/O 类型
COMMON
JESD-30 代码
S-PQCC-J52
JESD-609代码
e0
长度
19.1262 mm
内存密度
8192 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
8
湿度敏感等级
3
功能数量
1
端口数量
2
端子数量
52
字数
1024 words
字数代码
1000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
1KX8
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
QCCJ
封装等效代码
LDCC52,.8SQ
封装形状
SQUARE
封装形式
CHIP CARRIER
并行/串行
PARALLEL
峰值回流温度(摄氏度)
225
电源
5 V
认证状态
Not Qualified
座面最大高度
4.57 mm
最大待机电流
0.004 A
最小待机电流
2 V
最大压摆率
0.14 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
J BEND
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
19.1262 mm
文档预览
HIGH SPEED
1K X 8 DUAL-PORT
STATIC SRAM
Features
x
IDT7130SA/LA
IDT7140SA/LA
x
x
High-speed access
– Military: 25/35/55/100ns (max.)
– Industrial: 55/100ns (max.)
– Commercial: 20/25/35/55/100ns (max.)
Low-power operation
– IDT7130/IDT7140SA
Active: 550mW (typ.)
Standby: 5mW (typ.)
– IDT7130/IDT7140LA
Active: 550mW (typ.)
Standby: 1mW (typ.)
MASTER IDT7130 easily expands data bus width to 16-or-
more-bits using SLAVE IDT7140
x
x
x
x
x
x
x
x
x
On-chip port arbitration logic (IDT7130 Only)
BUSY
output flag on IDT7130;
BUSY
input on IDT7140
INT
flag for port-to-port communication
Fully asynchronous operation from either port
Battery backup operation–2V data retention (LA only)
TTL-compatible, single 5V ±10% power supply
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Available in 48-pin DIP and LCC, 52-pin PLCC, and 64-pin
STQFP and TQFP
Functional Block Diagram
OE
L
CE
L
R/W
L
OE
R
CE
R
R/W
R
I/O
0L
- I/O
7L
I/O
Control
BUSY
L
(1,2)
I/O
Control
I/O
0R
-I/O
7R
,
BUSY
R
Address
Decoder
10
(1,2)
A
9L
A
0L
MEMORY
ARRAY
10
Address
Decoder
A
9R
A
0R
CE
L
OE
L
R/W
L
ARBITRATION
and
INTERRUPT
LOGIC
CE
R
OE
R
R/W
R
INT
L
(2)
INT
R
2689 drw 01
(2)
NOTES:
1. IDT7130 (MASTER):
BUSY
is open drain output and requires pullup resistor.
IDT7140 (SLAVE):
BUSY
is input.
2. Open drain output: requires pullup resistor.
JUNE 2000
1
DSC-2689/10
©2000 Integrated Device Technology, Inc.
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
Description
The IDT7130/IDT7140 are high-speed 1K x 8 Dual-Port Static
RAMs. The IDT7130 is designed to be used as a stand-alone 8-bit
Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the
IDT7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems.
Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-or-
more-bit memory system applications results in full-speed, error-
free operation without the need for additional discrete logic.
Both devices provide two independent ports with separate con-
trol, address, and I/O pins that permit independent asynchronous
access for reads or writes to any location in memory. An automatic
power down feature, controlled by
CE,
permits the on chip circuitry
of each port to enter a very low standby power mode.
Fabricated using IDT's CMOS high-performance tech-nology,
these devices typically operate on only 550mW of power. Low-
power (LA) versions offer battery backup data retention capability,
with each Dual-Port typically consuming 200µW from a 2V battery.
The IDT7130/IDT7140 devices are packaged in 48-pin sidebraze
or plastic DIPs, LCCs, flatpacks, 52-pin PLCC, and 64-pin TQFP
and STQFP. Military grade products are manufactured in compli-
ance with the latest revision of MIL-PRF-38535 QML, making it
ideally suited to military temperature applications demanding the
highest level of performance and reliability.
Pin Configurations
(1,2,3)
CE
L
R/W
L
BUSY
L
INT
L
OE
L
A
0L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
I/O
3L
I/O
4L
I/O
5L
I/O
6L
I/O
7L
GND
1
48
2
47
3
46
4
45
5
44
6
43
7
42
8
IDT7130/40
41
9
P or C
40
(4)
10
P48-1
39
&
(4)
38
11
C48-2
12
48-Pin
37
13
DIP
(5)
36
14
Top View
35
15
34
16
33
32
17
18
31
19
30
20
29
21
28
22
27
23
26
24
25
V
CC
CE
R
R/W
R
BUSY
R
INT
R
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
7R
INDEX
I/O
6R
I/O
5R
I/O
4R
I/O
3R
A
1L
I/O
2R
A
2L
I/O
1R
I/O
0R
A
3L
,
2689 drw 02
OE
L
INT
L
BUSY
L
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. P48-1 package body is approximately .55 in x .61 in x .19 in.
C48-2 package body is approximately .62 in x 2.43 in x .15 in.
L48-1 package body is approximately .57 in x .57 in x .68 in.
F48-1 package body is approximately .75 in x .75 in x .11 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
6 5 4
7
8
9
10
11
12
13
14
15
16
17
18
19 20 21
48 47 46 45 44 43
42
41
40
39
IDT7130/40L48 or F
38
L48-1
(4)
&
37
F48-1
(4)
36
48-Pin LCC/ Flatback
35
Top View
(5)
34
33
32
31
22 23 24 25 26 27 28 29 30
1
3 2
R/W
L
CE
L
V
CC
CE
R
R/W
R
BUSY
R
INT
R
OE
R
A
0L
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
7R
I/O
6R
,
2
I/O
3L
I/O
4L
I/O
5L
I/O
6L
I/O
7L
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
2689 drw 03
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
INDEX
7 6 5 4 3 2
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
I/O
3L
8
9
10
11
12
13
14
15
16
17
18
19
20
1
52 51 50 49 48 47
46
45
44
43
42
41
40
39
38
37
36
35
34
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
N/C
I/O
7R
2689 drw 04
IDT7130/40J
J52-1
(4)
52-Pin PLCC
Top View
(5)
21 22 23 24 25 26 27 28 29 30 31 32 33
INDEX
OE
L
A
0L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
N/C
A
7L
A
8L
A
9L
N/C
I/O
0L
I/O
1L
I/O
2L
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
N/C
N/C
N/C
INT
L
BUSY
L
R/W
L
CE
L
V
CC
V
CC
CE
R
R/W
R
BUSY
R
INT
R
N/C
N/C
N/C
I/O
4L
I/O
5L
I/O
6L
I/O
7L
N/C
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
I/O
6R
CE
R
R/W
R
BUSY
R
INT
R
N/C
A
0L
OE
L
N/C
INT
L
BUSY
L
R/W
L
CE
L
V
CC
Pin Configurations
(1,2,3)
(con't.)
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
IDT7130/40TF or PF
PP64-1 & PN64-1
(4)
64-Pin STQFP
64-Pin TQFP
Top View
(5)
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
N/C
A
7R
A
8R
A
9R
N/C
N/C
I/O
7R
I/O
6R
,
2689 drw 05
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. J52-1 package body is approximately .75 in x .75 in x .17 in.
PP64-1 package body is approximately 10 mm x 10 mm x 1.4mm.
PN64-1 package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
I/O
3L
N/C
I/O
4L
I/O
5L
I/O
6L
I/O
7L
N/C
GND
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
N/C
I/O
4R
I/O
5R
3
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
& Industrial
-0.5 to +7.0
Military
-0.5 to +7.0
Unit
V
Recommended DC Operating
Conditions
Symbol
V
CC
GND
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
____
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
2689 tbl 02
T
BIAS
T
STG
I
OUT
-55 to +125
-65 to +150
50
-65 to +135
-65 to +150
50
o
C
C
V
IH
V
IL
o
mA
2689 tbl 01
NOTES:
1. V
IL
(min.) > -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc + 10%.
Recommended Operating
Temperature and Supply Voltage
(1,2)
Grade
Military
Commercial
Ambient
Temperature
-55
O
C to +125
O
C
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
0V
Vcc
5.0V
+
10%
5.0V
+
10%
5.0V
+
10%
2689 tbl 03
Capacitance
Symbol
C
IN
C
OUT
(T
A
= +25°C, f = 1.0MHz)
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
2689 tbl 05
Industrial
STQFP and TQFP Packages Only
Parameter
(1)
Input Capacitance
Output Capacitance
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
CC
= 5.0V ± 10%)
7130SA
7140SA
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
(1)
Output Low Voltage (I/O
0
-I/O
7
)
Open Drain Output
Low Voltage (BUSY,
INT)
Output High Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
V
CC
- 5.5V,
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OL
= 16mA
I
OH
= -4mA
Min.
___
7130LA
7140LA
Min.
___
Max.
10
10
0.4
0.5
___
Max.
5
5
0.4
0.5
___
Unit
µA
µA
V
V
V
2689 tbl 04
___
___
___
___
___
___
2.4
2.4
NOTE:
1. At Vcc
<
2.0V leakages are undefined.
4
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1,5,7)
(V
CC
= 5.0V ± 10%)
7130X20
(2)
7140X20
(2)
Com 'l Only
Sym b ol
I
CC
Param eter
Dynam ic O p e rating
Curre nt
(B o th P o rts A c tive )
Test Con dition
CE
L
and
CE
R
= V
IL
,
O utp uts Disab le d
f = f
MAX
(3)
Version
CO M 'L
M IL &
IND
CO M 'L
M IL &
IND
I
SB 2
S tand b y Curre nt
(O ne P o rt - TTL
Le ve l Inp uts)
CE
"A"
= V
IL
and
CE
" B"
= V
IH
(6)
A c tive P o rt O utp utsDisab le d ,
f= f
MAX
(3)
CO M 'L
M IL &
IND
CO M 'L
M IL &
IND
CO M 'L
M IL &
IND
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
Typ .
110
110
____
____
7130X25
7140X25
Com 'l &
M ilitary
Typ .
110
110
110
110
30
30
30
30
65
65
65
65
1.0
0.2
1.0
0.2
60
60
60
60
M ax.
220
170
280
220
65
45
80
60
150
115
160
125
15
5
30
10
145
105
155
115
7130X35
7140X35
Com 'l &
M ilitary
Typ .
110
110
110
110
25
25
25
25
50
50
50
50
1.0
0.2
1.0
0.2
45
45
45
45
M ax.
165
120
230
170
65
45
80
60
125
90
150
115
15
4
30
10
110
85
145
105
2689 tb l 06a
M ax.
250
200
____
____
Unit
mA
I
SB 1
S tand b y Curre nt
(B o th P o rts - TTL
Le ve l Inp uts)
CE
L
and
CE
R
= V
IH
f = f
MAX
(3)
30
30
____
____
65
45
____
____
mA
65
65
____
____
165
125
____
____
mA
I
SB 3
Full S tand b y Curre nt
(B o th P o rts -
CM O S Le v e l Inp uts )
CE
L
and
CE
R
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V o r
V
IN
< 0.2 V, f = 0
(4)
CE
"A "
< 0.2V and
CE
"B "
> V
CC
- 0.2V
(6)
V
IN
> V
CC
- 0.2V o r V
IN
< 0.2V
A c tive P o rt O utp uts D is ab le d ,
f = f
MAX
(3)
1.0
0.2
____
____
15
5
____
____
mA
I
SB 4
Full S tand b y Curre nt
(O ne P o rt -
CM O S Le v e l Inp uts )
60
60
____
____
155
115
____
____
mA
7130X55
7140X55
Com 'l, In d
& M ilitary
Sym b ol
I
CC
Param eter
Dynam ic O p e rating
Curre nt
(B o th P o rts A c tive )
CE
L
and
CE
R
= V
IL
,
O utp uts Disab le d
f = f
MAX
(3)
Test Con dition
Version
CO M 'L
M IL &
IND
CO M 'L
M IL &
IND
I
SB 2
S tand b y Curre nt
(O ne P o rt - TTL
Le ve l Inp uts)
CE
"A"
= V
IL
and
CE
" B"
= V
IH
(6)
A c tive P o rt O utp uts D is ab le d ,
f= f
MAX
(3)
CO M 'L
M IL &
IND
CO M 'L
M IL &
IND
CO M 'L
M IL &
IND
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
Typ .
110
110
110
110
20
20
20
20
40
40
40
40
1.0
0.2
1.0
0.2
40
40
40
40
M ax.
155
110
190
140
65
35
65
45
110
75
125
90
15
4
30
10
100
70
110
85
7130X100
7140X100
Com 'l, In d
& M ilitary
Typ .
110
110
110
110
20
20
20
20
40
40
40
40
1.0
0.2
1.0
0.2
40
40
40
40
M ax.
155
110
190
140
55
35
65
45
110
75
125
90
15
4
30
10
95
70
110
80
mA
mA
mA
mA
Unit
mA
I
SB 1
S tand b y Curre nt
(B o th P o rts - TTL
Le ve l Inp uts)
CE
L
and
CE
R
= V
IH
f = f
MAX
(3)
I
SB 3
Full S tand b y Curre nt
(B o th P o rts -
CM O S Le v e l Inp uts )
CE
L
and
CE
R
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V o r
V
IN
< 0.2 V, f = 0
(4)
CE
"A "
< 0.2V and
CE
"B "
> V
CC
- 0.2V
(6)
V
IN
> V
CC
- 0.2V o r V
IN
< 0.2V
A c tive P o rt O utp uts D is ab le d ,
f = f
MAX
(3)
I
SB 4
Full S tand b y Curre nt
(O ne P o rt -
CM O S Le v e l Inp uts )
2689 tb l 0 6b
NOTES:
1. 'X' in part numbers indicates power rating (SA or LA).
2. PLCC and TQFP packages only.
3. At f = f
MAX
, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
CYC
, and using “AC TEST CONDITIONS” of input levels
of GND to 3V.
4. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
5. Vcc = 5V, T
A
=+25°C for Typ and is not production tested. Vcc DC = 100 mA (Typ)
6. Port "A" may be either left or right port. Port "B" is opposite from port "A".
7. Industrial temperature: for other speeds, packages and powers contact your sales office.
5
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