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IDT71342LA20J

Dual-Port SRAM, 4KX8, 20ns, CMOS, PQCC52, PLASTIC, LCC-52

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
LCC
包装说明
PLASTIC, LCC-52
针数
52
Reach Compliance Code
not_compliant
ECCN代码
EAR99
最长访问时间
20 ns
其他特性
SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP
I/O 类型
COMMON
JESD-30 代码
S-PQCC-J52
JESD-609代码
e0
长度
19.1262 mm
内存密度
32768 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
8
湿度敏感等级
3
功能数量
1
端口数量
2
端子数量
52
字数
4096 words
字数代码
4000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
4KX8
输出特性
3-STATE
可输出
YES
封装主体材料
PLASTIC/EPOXY
封装代码
QCCJ
封装等效代码
LDCC52,.8SQ
封装形状
SQUARE
封装形式
CHIP CARRIER
并行/串行
PARALLEL
峰值回流温度(摄氏度)
225
电源
5 V
认证状态
Not Qualified
座面最大高度
4.57 mm
最大待机电流
0.0045 A
最小待机电流
2 V
最大压摆率
0.24 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
J BEND
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
19.1262 mm
文档预览
HIGH SPEED
4K X 8 DUAL-PORT
STATIC RAM
WITH SEMAPHORE
Features
IDT71342SA/LA
High-speed access
– Commercial: 20/25/35/45/55/70ns (max.)
– Industrial: 25ns (max.)
Low-power operation
– IDT71342SA
Active: 700mW (typ.)
Standby: 5mW (typ.)
– IDT71342LA
Active: 700mW (typ.)
Standby: 1mW (typ.)
Fully asynchronous operation from either port
Full on-chip hardware support of semaphore signalling be-
tween ports
Battery backup operation—2V data retention (LA only)
TTL-compatible; single 5V (±10%) power supply
Available in plastic packages
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
R/W
L
CE
L
R/W
R
CE
R
OE
L
I/O
CONTROL
I/O
CONTROL
OE
R
I/O
0L
- I/O
7L
I/O
0R
- I/O
7R
MEMORY
ARRAY
SEMAPHORE
LOGIC
SEM
L
ADDRESS
DECODER
ADDRESS
DECODER
SEM
R
A
0L
- A
11L
A
0R
- A
11R
2721 drw 01
SEPTEMBER 2012
1
©2012 Integrated Device Technology, Inc.
DSC 2621/14
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore
Industrial and Commercial Temperature Ranges
Description
The IDT71342 is a high-speed 4K x 8 Dual-Port Static RAM with full
on-chip hardware support of semaphore signalling between the two
ports.
The IDT71342 provides two independent ports with separate
control, address, and I/O pins that permit independent, asynchronous
access for reads or writes to any location in memory. To assist in
arbitrating between ports, a fully independent semaphore logic block
is provided. This block contains unassigned flags which can be
accessed by either side; however, only one side can control the flag at any
time. An automatic power down feature, controlled by
CE
and
SEM,
permits the on-chip circuitry of each port to enter a very low standby power
mode (both
CE
and
SEM
HIGH).
Fabricated using CMOS high-performance technology, this device
typically operates on only 700mW of power. Low-power (LA) versions
offer battery backup data retention capability, with each port typically
consuming 200µW from a 2V battery. The device is packaged in either a
64-pin TQFP or a 52-pin PLCC.
Pin Configurations
(1,2,3)
R/W
R
SEM
R
A
11R
SEM
L
R/W
L
CE
L
INDEX
7 6 5
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
I/O
3L
8
9
10
11
12
13
14
15
16
17
18
19
20
4 3
2
1
52 51 50 49 48 47
46
45
44
43
42
41
40
39
38
37
36
35
34
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
N/C
I/O
7R
IDT71342J
J52-1
(4)
52-Pin PLCC
Top View
(5)
21 22 23 24 25 26 27 28 29 30 31 32 33
I/O
5L
N/C
GND
I/O
0R
I/O
1R
I/O
2R
I/O
4R
I/O
5R
I/O
3R
I/O
6R
I/O
4L
I/O
6L
I/O
7L
V
CC
CE
R
A
10R
OE
L
A
10L
A
11L
A
0L
2721 drw 02
INDEX
OE
L
A
0L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
N/C
A
7L
A
8L
A
9L
N/C
I/O
0L
I/O
1L
I/O
2L
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
N/C
N/C
A
10L
A
11L
SEM
L
R/W
L
CE
L
V
CC
N/C
CE
R
R/W
R
SEM
R
A
11R
A
10R
N/C
N/C
NOTES:
1. All Vcc pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. J52 package body is approximately .79 in x .79 in x .17 in.
PN64 package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
I/O
3L
N/C
I/O
4L
I/O
5L
I/O
6L
I/O
7L
N/C
N/C
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
N/C
I/O
4R
I/O
5R
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
71342PF
PN64-1
(4)
64-Pin TQFP
Top View
(5)
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
N/C
A
7R
A
8R
A
9R
N/C
N/C
I/O
7R
I/O
6R
2721 drw 03
6.42
2
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Temperature
Under Bias
Storage
Temperature
Power
Dissipation
DC Output
Current
Commercial
& Industrial
-0.5 to +7.0
Unit
V
Maximum Operating
Temperature and Supply Voltage
(1,2)
Grade
Commercial
Ambient
Temperature
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
Vcc
5.0V
+
10%
5.0V
+
10%
2721 tbl 03
T
BIAS
T
STG
P
T
I
OUT
-55 to +125
-65 to +150
1.5
50
o
C
C
Industrial
o
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
W
mA
2721 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10 ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc +10%.
Recommended DC Operating
Conditions
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
____
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
2721 tbl 04
Capacitance
(1)
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
2721 tbl 02
NOTES:
1. V
IL
(min.) > -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dv references the interpolated capacitance when the input and output signals
switch from 0V to 3V and from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage
(V
CC
= 5V ± 10%)
71342SA
Symbol
|I
LI
|
|I
LO
|
V
OL
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 6mA
I
OL
= 8mA
V
OH
Output High Voltage
I
OH
= -4mA
Min.
___
___
___
___
71342LA
Min.
___
___
___
___
Max.
10
10
0.4
0.5
___
Max.
5
5
0.4
0.5
___
Unit
µA
µA
V
V
V
2721 tbl 05
2.4
2.4
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
3
6.42
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1)
(V
CC
= 5.0V ± 10%)
71342X20
Com'l Only
Symbol
I
CC
Parameter
Dynamic Operating Current
(Both Ports Active)
Test Condition
CE
= V
IL
,
Outputs Disabled
SEM
= Don't Care
f = f
MAX
(3)
CE
L
and
CE
R
= V
IH
SEM
L
=
SEM
R
> V
IH
f = f
MAX
(3)
Version
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
Typ.
(2)
170
170
____
____
71342X25
Com'l & Ind
Typ.
(2)
160
160
160
160
25
25
25
25
95
95
95
95
1.0
0.2
1.0
0.2
95
95
95
95
Max.
280
240
310
260
80
50
100
80
180
150
210
170
15
4.0
30
10
170
120
210
190
71342X35
Com'l Only
Typ.
(2)
150
150
150
150
25
25
25
25
85
85
85
85
1.0
0.2
1.0
0.2
85
85
85
85
Max.
260
200
300
250
75
45
75
55
170
140
200
160
15
4.0
30
10
150
110
190
130
2721 tbl 06a
Max.
280
240
____
____
Unit
mA
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
25
25
____
____
80
80
____
____
mA
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
Active Port Outputs Disabled,
f=f
MAX
(3)
105
105
____
____
180
150
____
____
mA
I
SB3
Full Standby Current (Both
Ports -
CMOS Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
SEM
L
=
SEM
R
> V
CC
- 0.2V
f = 0
(3)
One Port
CE
"A"
or
CE
"B"
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
SEM
L
=
SEM
R
> V
CC
- 0.2V
Active Port Outputs Disabled,
f = f
MAX
(3)
1.0
0.2
____
____
15
4.5
____
____
mA
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
105
105
____
____
170
130
____
____
mA
71342X45
Com'l Only
Symbol
I
CC
Parameter
Dynamic Operating Current
(Both Ports Active)
Test Condition
CE
= V
IL
,
Outputs Disabled
SEM
= Don't Care
f = f
MAX
(3)
CE
L
and
CE
R
= V
IH
SEM
L
=
SEM
R
> V
IH
f = f
MAX
(3)
Version
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
Typ.
(2)
140
140
____
____
71342X55
Com'l Only
Typ.
(2)
140
140
140
140
25
25
25
25
75
75
75
75
1.0
0.2
1.0
2.0
75
75
75
75
Max.
240
200
270
220
70
40
70
50
160
130
180
150
15
4.0
30
10
150
100
170
120
71342X70
Com'l Only
Typ.
(2)
140
140
____
____
Max.
240
200
____
____
Max.
240
200
____
____
Unit
mA
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
25
25
____
____
70
40
____
____
25
25
____
____
70
40
____
____
mA
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
Active Port Outputs Disabled,
f=f
MAX
(3)
75
75
____
____
160
130
____
____
75
75
____
____
160
130
____
____
mA
I
SB3
Full Standby Current (Both
Ports -
CMOS Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
SEM
L
=
SEM
R
> V
CC
- 0.2
V
f = 0
(3)
One Port
CE
"A"
or
CE
"B"
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
SEM
L
=
SEM
R
> V
CC
- 0.2V
Active Port Outputs Disabled,
f = f
MAX
(3)
1.0
0.2
____
____
15
4.0
____
____
1.0
0.2
____
____
15
4.0
____
____
mA
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
75
75
____
____
150
100
____
____
75
75
____
____
150
100
____
____
mA
NOTES:
1. 'X' in part number indicates power rating (SA or LA).
2. V
CC
= 5V, T
A
= +25°C for typical, and parameters are not production tested.
3. f
MAX
= 1/t
RC
= All inputs cycling at f = 1/t
RC
(except Output Enable). f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby I
SB3.
2721 tbl 06b
6.42
4
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore
Industrial and Commercial Temperature Ranges
Data Retention Characteristics
Symbol
V
DR
I
CCDR
t
CDR
(3)
t
R
(3)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
(LA Version Only) V
LC
= 0.2V, V
HC
= V
CC
- 0.2V
Test Condition
___
Min.
2.0
Typ.
(1)
Max.
___
Unit
V
µA
ns
ns
2721 tbl 07
V
CC
= 2V,
CE
> V
HC
SEM
> V
HC
V
IN
> V
HC
or < V
LC
COM'L. & IND.
___
100
___
___
1500
___
___
0
t
RC
(2)
NOTES:
1. V
CC
= 2V, T
A
= +25°C, and are not production tested.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Data Rention Waveform
DATA RETENTION MODE
V
CC
4.5V
t
CDR
CE
V
IH
V
DR
V
DR
>
2V
4.5V
t
R
V
IH
2721 drw 04
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
Figures 1 and 2
2721 tbl 08
+5V
1250Ω
DATA
OUT
775Ω
30pF
2721 drw 05
,
+5V
1250Ω
DATA
OUT
775Ω
5pF *
,
2721 drw 06
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(for t
LZ
, t
HZ
, t
WZ
, t
OW
)
*Including scope and jig
5
6.42
查看更多>
参数对比
与IDT71342LA20J相近的元器件有:IDT71342LA20JG、IDT71342LA20JG8、IDT71342LA20PFG8、IDT71342LA20PFG。描述及对比如下:
型号 IDT71342LA20J IDT71342LA20JG IDT71342LA20JG8 IDT71342LA20PFG8 IDT71342LA20PFG
描述 Dual-Port SRAM, 4KX8, 20ns, CMOS, PQCC52, PLASTIC, LCC-52 Dual-Port SRAM, 4KX8, 20ns, CMOS, PQCC52, PLASTIC, LCC-52 Dual-Port SRAM, 4KX8, 20ns, CMOS, PQCC52, PLASTIC, LCC-52 Dual-Port SRAM, 4KX8, 20ns, CMOS, PQFP64, PLASTIC, TQFP-64 Dual-Port SRAM, 4KX8, 20ns, CMOS, PQFP64, PLASTIC, TQFP-64
是否无铅 含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 不符合 符合 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 LCC LCC LCC QFP QFP
包装说明 PLASTIC, LCC-52 QCCJ, QCCJ, LQFP, LQFP,
针数 52 52 52 64 64
Reach Compliance Code not_compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 20 ns 20 ns 20 ns 20 ns 20 ns
其他特性 SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP
JESD-30 代码 S-PQCC-J52 S-PQCC-J52 S-PQCC-J52 S-PQFP-G64 S-PQFP-G64
JESD-609代码 e0 e3 e3 e3 e3
长度 19.1262 mm 19.1262 mm 19.1262 mm 14 mm 14 mm
内存密度 32768 bit 32768 bit 32768 bit 32768 bit 32768 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 8 8 8 8 8
功能数量 1 1 1 1 1
端口数量 2 2 2 2 2
端子数量 52 52 52 64 64
字数 4096 words 4096 words 4096 words 4096 words 4096 words
字数代码 4000 4000 4000 4000 4000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C
组织 4KX8 4KX8 4KX8 4KX8 4KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
可输出 YES YES YES YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ QCCJ QCCJ LQFP LQFP
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER CHIP CARRIER CHIP CARRIER FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 225 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 4.57 mm 4.57 mm 4.57 mm 1.6 mm 1.6 mm
最小待机电流 2 V 2 V 2 V 2 V 2 V
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) Matte Tin (Sn) MATTE TIN MATTE TIN MATTE TIN
端子形式 J BEND J BEND J BEND GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 0.8 mm 0.8 mm
端子位置 QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 30 30 30 30 30
宽度 19.1262 mm 19.1262 mm 19.1262 mm 14 mm 14 mm
湿度敏感等级 3 - - 3 3
Base Number Matches - 1 1 1 -
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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