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IDT71681LA35DB

Standard SRAM, 4KX4, 35ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
DIP
包装说明
0.300 INCH, CERDIP-24
针数
24
Reach Compliance Code
not_compliant
ECCN代码
3A001.A.2.C
最长访问时间
35 ns
I/O 类型
SEPARATE
JESD-30 代码
R-GDIP-T24
JESD-609代码
e0
长度
32.004 mm
内存密度
16384 bit
内存集成电路类型
STANDARD SRAM
内存宽度
4
功能数量
1
端口数量
1
端子数量
24
字数
4096 words
字数代码
4000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
4KX4
输出特性
3-STATE
可输出
NO
封装主体材料
CERAMIC, GLASS-SEALED
封装代码
DIP
封装等效代码
DIP24,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
并行/串行
PARALLEL
电源
5 V
认证状态
Not Qualified
筛选级别
38535Q/M;38534H;883B
座面最大高度
5.08 mm
最大待机电流
0.0001 A
最小待机电流
2 V
最大压摆率
0.09 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
MILITARY
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
宽度
7.62 mm
文档预览
CMOS STATIC RAMS
16K (4K x 4-BIT)
Separate Data Inputs and Outputs
Integrated Device Technology, Inc.
IDT71681SA/LA
IDT71682SA/LA
FEATURES:
• Separate data inputs and outputs
• IDT71681SA/LA: outputs track inputs during write mode
• IDT71682SA/LA: high-impedance outputs during write
mode
• High speed (equal access and cycle time)
— Military: 15/20/25/35/45/55/70/85/100ns (max.)
— Commercial: 15/20/25/35/45ns (max.)
• Low power consumption
• Battery backup operation—2V data retention (LA version
only)
• High-density 24-pin 300-mil Ceramic or Plastic DIP, 24-
pin CERPACK, and 28-pin leadless chip carrier
• Produced with advanced CMOS high-performance
technology
• CMOS process virtually eliminates alpha particle soft-
error rates
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT71681/IDT71682 are 16,384-bit high-speed static
RAMs organized as 4K x 4. They are fabricated using IDT’s
high-performance, high-reliability technology—CMOS. This
state-of-the-art technology, combined with innovative circuit
design techniques, provides a cost-effective approach for
high-speed memory applications.
Access times as fast as 15ns are available. These circuits
also offer a reduced power standby mode. When
CS
goes
HIGH, the circuit will automatically go to, and remain in, this
standby mode as long as
CS
remains HIGH. In the standby
mode, the devices consume less than 10µW, typically. This
capability provides significant system-level power and cooling
savings. The low-power (LA) versions also offer a battery
backup data retention capability where the circuit typically
consumes only 1µW operating off a 2V battery.
All inputs and outputs of the IDT71681/IDT71682 are TTL-
compatible and operate from a single 5V supply.
FUNCTIONAL BLOCK DIAGRAM
A
0
V
CC
ADDRESS
DECODER
A
11
16,384-BIT
MEMORY ARRAY
GND
D
4
D
3
D
2
D
1
I/O CONTROL
INPUT
DATA
CONTROL
Y
4
Y
3
Y
2
Y
1
WE
CS
IDT71682 ONLY
IDT71681 ONLY
2984 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1994
Integrated Device Technology, Inc.
MAY 1994
DSC-1018/3
5.3
1
IDT71681SA/LA, IDT71682SA/LA
CMOS STATIC RAMS 16K (4K x 4-BIT) Separate Data Inputs and Outputs
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DESCRIPTION (Continued):
The IDT71681/IDT71682 are packaged in either space-
saving 24-pin, 300-mil DlPs, CERPACKS, or 28-pin leadless
chip carriers.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
PIN DESCRIPTIONS
Name
A
0
– A
11
Description
Address Inputs
Chip Select
Write Enable
DATA
IN
DATA
OUT
Power
Ground
2984 tbl 01
CS
WE
D
1 –
D
4
Y
1 –
Y
4
V
CC
GND
PIN CONFIGURATIONS
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
D
1
D
2
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
TRUTH TABLE
(3)
V
CC
A
11
A
10
A
9
A
8
D
4
D
3
Y
4
Y
3
Y
2
Y
1
Mode
Standby
Read
Write
(1)
Write
(2)
CS
H
L
L
L
WE
X
H
L
L
Output
High-Z
DATA
OUT
DATA
IN
High-Z
Power
Standby
Active
Active
Active
2984 tbl 02
P24-1,
D24-1,
&
E24-1
20
19
18
17
16
15
14
13
CS
GND
NOTES:
1. For IDT71681 only.
2. For IDT71682 only.
3. H = V
IH
, L = V
IL
, X = don't care.
WE
ABSOLUTE MAXIMUM RATINGS
(1)
2984 drw 02
Symbol
V
TERM
DIP/SOIC/SOJ/CERPACK
TOP VIEW
Rating
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
Power Dissipation
DC Output
Current
Com’l.
–0.5 to +7.0
Mil.
–0.5 to +7.0
Unit
V
T
A
T
BIAS
0 to +70
–55 to +125
–55 to +125
1.0
50
–55 to +125
–65 to +135
–65 to +150
1.0
50
°C
°C
°C
W
mA
INDEX
A
3
A
2
A
1
A
0
V
CC
A
11
A
10
T
STG
P
T
4
3
2
A
4
A
5
NC
NC
A
6
A
7
D
1
5
6
7
8
9
10
1
28 27 26
25
24
23
L28-1
22
21
20
19
11
12 13 14 15 16 17 18
A
9
A
8
D
4
NC
NC
D
3
Y
4
I
OUT
NOTE:
2984 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CS
D
2
GND
WE
Y
1
Y
2
Y
3
2984 drw 03
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
LCC
TOP VIEW
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
NOTE:
2984 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
5.3
2
IDT71681SA/LA, IDT71682SA/LA
CMOS STATIC RAMS 16K (4K x 4-BIT) Separate Data Inputs and Outputs
MILITARY AND COMMERCIAL TEMPERATURE RANGES
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Max. Unit
5.5
0
6.0
0.8
V
V
V
V
Grade
Military
Commercial
Ambient Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
V
CC
5V
±
10%
5V
±
10%
2984 tbl 06
Typ.
5.0
0
NOTE:
2984 tbl 05
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
DATA RETENTION CHARACTERISTICS
(LA Version Only; V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
IDT71681/2LA
Symbol
V
DR
I
CCDR
Parameter
V
CC
for Data Retention
Data Retention Current
Test Condition
Min.
2.0
Typ.
(1)
0.5
(2)
1.0
(3)
0.5
(2)
1.0
(3)
Max.
100
(2)
150
(3)
20
(2)
30
(3)
Unit
V
µA
µA
ns
ns
2984 tbl 07
CS
V
HC
V
IN
V
HC
or
V
LC
MIL.
COM’L.
0
t
RC(4)
t
CDR(5)
t
R(5)
Chip Deselect to Data
Retention Time
Operation Recovery Time
NOTES:
1. T
A
= +25°C.
2. At V
CC
= 2V
3. At V
CC
= 3V
4. t
RC
= Read Cycle Time.
5. This parameter is guaranteed by device characterization, but is not production tested.
LOW V
CC
DATA RETENTION WAVEFORM
DATA
RETENTION
MODE
4.5V
t
CDR
V
DR
2V
V
IH
V
DR
V
IH
2984 drw 04
V
CC
4.5V
t
R
CS
DC ELECTRICAL CHARACTERISTICS
V
CC
= 5.0V
±
10%
IDT71681/2SA
Symbol
|I
LI
|
|I
LO
|
V
OL
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Test Condition
V
CC
= Max.,
V
IN
= GND to V
CC
V
CC
= Max.,
CS
= V
IH,
V
OUT
= GND to V
CC
I
OL
= 10mA, V
CC
= Min.
I
OL
= 8mA, V
CC
= Min.
V
OH
Output High Voltage
I
OH
= –4mA, V
CC
= Min.
2.4
MIL.
COM’L.
MIL.
COM’L.
Min.
Typ.
Max.
10
5
10
5
0.5
0.4
IDT71681/2LA
Min.
2.4
Typ.
Max.
5
2
5
2
0.5
0.4
V
2984 tbl 08
Unit
µA
µA
V
5.3
3
IDT71681SA/LA, IDT71682SA/LA
CMOS STATIC RAMS 16K (4K x 4-BIT) Separate Data Inputs and Outputs
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1,5)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
71681x15
71682x15
Symbol
I
CC1
Parameter
Operating Power
Supply Current
CS
V
IL
, Outputs
Open, V
CC
= Max.,
f = 0
(3)
Dynamic Operating
Current
CS
V
IL
, Outputs
Open,V
CC
= Max.,
f = f
MAX(3)
Standby Power
SupplyCurrent
(TTL Level)
CS
V
IH
,
V
CC
= Max., Outputs
Open, f = f
MAX(3)
Full Standby Power
Supply Current
(CMOS Level)
CS
V
HC
, V
CC
= Max.,
V
IN
V
HC
or
V
IN
V
LC
, f = 0
(3)
Power Com’l.
SA
110
Mil.
120
71681x20
71682x20
Com’l.
90
Mil.
100
71681x25
71682x25
Com’l.
90
Mil.
100
Unit
mA
LA
SA
145
165
70
120
80
120
70
110
80
120
mA
I
CC2
LA
SA
55
65
100
45
110
55
90
35
100
45
mA
I
SB
LA
SA
20
20
30
20
35
20
25
3
30
10
mA
I
SB1
LA
0.5
0.3
0.5
0.3
DC ELECTRICAL CHARACTERISTICS (Continued)
(1,5)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
71681x35
71682x35
Symbol
I
CC1
Parameter
Operating Power
Supply Current
CS
V
IL
, Outputs Open,
V
CC
= Max., f = 0
(3)
Dynamic Operating
Current
CS
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
Standby Power Supply
Current (TTL Level)
CS
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(3)
Full Standby Power Supply
Current (CMOS Level)
CS
V
HC
, V
CC
= Max.,
V
IN
V
HC
or V
IN
V
LC
, f = 0
(3)
Power
SA
LA
SA
LA
SA
LA
SA
LA
Com’l.
90
70
100
80
30
20
3
0.5
Mil.
100
80
110
90
35
25
10
0.3
71681x45
71682x45
Com’l.
90
70
100
70
30
20
3
0.5
Mil.
100
80
110
80
35
25
10
0.3
71681x55
(4)
71682x55
(4)
Com’l.
Mil.
100
80
110
80
35
20
10
0.3
71681x70
(2,4)
71682x70
(2,4)
Com’l.
Mil.
100
80
110
80
35
20
10
0.3
2984 tbl 09
Unit
mA
I
CC2
mA
I
SB
mA
I
SB1
mA
NOTES:
1. All values are maximum guaranteed values.
2. Also available 85 and 100ns military devices.
3. f
MAX
= 1/tRC, only address inputs are cycling at fMAX. f = 0 means no address inputs are changing.
4. –55°C to +125°C temperature range only.
5. "x" in part numbers indicates power rating (SA or LA).
5.3
4
IDT71681SA/LA, IDT71682SA/LA
CMOS STATIC RAMS 16K (4K x 4-BIT) Separate Data Inputs and Outputs
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2984 tbl 10
5V
480Ω
DATA
OUT
255Ω
30pF*
DATA
OUT
255Ω
5V
480Ω
5pF*
2984 drw 05
2984 drw 06
Figure 1. AC Test Load
*Includes scope and jig capacitances
Figure 2. AC Test Load
(for t
CLZ
, t
CHZ
, t
WHZ
, and t
OW
)
AC ELECTRICAL CHARACTERISTICS
(3)
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
71681x15
71682x15
71681x20
71682x20
71681x25
71682x25
Symbol
Read Cycle
t
RC
t
AA
t
ACS
t
OH
t
CLZ(2)
t
CHZ(2)
t
PU(2)
t
PD(2)
Parameter
Min.
Max.
Min.
Max.
Min.
Max. Unit
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change
Chip Select to Output in Low-Z
Chip Select to Output in High-Z
Chip Select to Power Up Time
Chip Select to Power Down Time
15
3
5
0
15
15
7
15
20
3
5
0
20
20
9
20
25
3
5
0
25
25
10
25
ns
ns
ns
ns
ns
ns
ns
ns
AC ELECTRICAL CHARACTERISTICS
(3)
(Continued)
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
71681x35
71682x35
Symbol
Read Cycle
t
RC
t
AA
t
ACS
t
OH
t
CLZ(2)
t
CHZ(2)
t
PU(2)
t
PD(2)
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change
Chip Select to Output in Low-Z
Chip Select to Output in High-Z
Chip Select to Power-Up Time
Chip Select to Power-Down Time
35
3
5
0
35
35
15
35
45
3
5
0
45
45
20
40
55
3
5
0
55
55
25
50
70
3
5
0
70
70
30
60
ns
ns
ns
ns
ns
ns
ns
ns
2984 tbl 11
71681x45
71682x45
Min.
Max.
71681x55
(1)
71682x55
(1)
Min.
Max.
71681x70
(1)
71682x70
(1)
Min.
Max.
Unit
Parameter
Min.
Max.
NOTES:
1. –55°C to +125°C temperature range only.
2. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
3. "x" in part numbers indicates power rating (SA or LA).
5.3
5
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