CMOS STATIC RAM
64K (64K x 1-BIT)
Integrated Device Technology, Inc.
IDT7187S
IDT7187L
FEATURES:
• High speed (equal access and cycle time)
— Military: 20/25/35/45/55/70/85ns (max.)
— Commercial: 15/20/25ns (max.)
• Low power consumption
• Battery backup operation—2V data retention (L version
only)
• JEDEC standard high-density 22-pin plastic and ceramic
DIP, 22-pin and 28-pin leadless chip carrier and 24-pin
CERPACK
• Produced with advanced CMOS high-performance
technology
• Separate data input and output
• Input and output directly TTL-compatible
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT7187 is a 65,536-bit high-speed static RAM
organized as 64K x 1. It is fabricated using IDT’s high-
performance, high-reliability CMOS technology. Access times
as fast as 15ns are available.
Both the standard (S) and low-power (L) versions of the
IDT7187 provide two standby modes—I
SB
and I
SB1
. I
SB
provides low-power operation; I
SB1
provides ultra-low-power
operation. The low-power (L) version also provides the capa-
bility for data retention using battery backup. When using a 2V
battery, the circuit typically consumes only 30µW.
Ease of system design is achieved by the IDT7187 with full
asynchronous operation, along with matching access and
cycle times. The device is packaged in an industry standard
22-pin, 300 mil plastic or ceramic DIP, 22- and 28-pin leadless
chip carriers, or 24-pin CERPACK.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
A
V
CC
A
A
A
A
A
ROW
SELECT
65,536-BIT
MEMORY ARRAY
GND
CS
DATA
IN
COLUMN I/O
DATA
OUT
WE
A
A
A
A
A
A
A
2986 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1994
Integrated Device Technology, Inc.
MAY 1994
DSC-1025/4
6.1
1
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
INDEX
V
CC
A
15
A
14
A
13
A
12
A
11
A
10
A
9
A
8
DATA
IN
CS
2986 drw 02
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
DATA
OUT
WE
GND
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
A
1
A
0
V
CC
A
15
2
22 21
1
20
19
18
3
4
5
6
7
8
9
10 11 12 13
PIN CONFIGURATIONS
P22-1
&
D22-1
A
2
A
3
A
4
A
5
A
6
A
7
DATA
OUT
L22-1
17
16
15
14
A
14
A
13
A
12
A
11
A
10
A
9
A
8
DATA
IN
GND
WE
CS
2986 drw 05
DIP
TOP VIEW
INDEX
22-PIN LCC
TOP VIEW
NC
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
DATA
OUT
WE
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
E24-1
19
18
17
16
15
14
13
DATA
IN
GND
NC
WE
V
CC
A
15
A
14
A
13
A
12
A
11
NC
A
10
A
9
A
8
DATA
IN
CS
2986 drw 04
A
1
A
2
A
3
A
4
NC
A
5
A
6
A
7
DATA
OUT
A
0
NC
NC
V
CC
A
15
3
4
5
6
7
8
9
10
11
2
28 27
1
26
25
24
23
L28-2
22
21
20
19
18
12
13 14 15 16 17
A
14
A
13
A
12
A
11
NC
A
10
A
9
A
8
NC
CS
2986 drw 06
CERPACK
TOP VIEW
28-PIN LCC
TOP VIEW
PIN DESCRIPTIONS
Name
A
0
–A
15
Description
Address Inputs
Chip Select
Write Enable
Power
Data Input
Data Output
Ground
2986 tbl 01
TRUTH TABLE
(1)
Mode
Standby
Read
Write
CS
H
L
L
WE
X
H
L
Output
High-Z
D
OUT
High-Z
Power
Standby
Active
Active
2986 tbl 02
CS
WE
V
CC
DATA
IN
DATA
OUT
GND
NOTE:
1. H = V
IH
, L = V
IL
, X = don't care.
6.1
2
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
Rating
Com’l.
Mil.
Unit
V
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
Power Dissipation
DC Output
Current
0 to +70
–55 to +125
CAPACITANCE
(T
A
= +25°C, F = 1.0MH
Z
)
Symbol
C
IN
C
OUT
°C
°C
°C
W
mA
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
T
A
T
BIAS
T
STG
P
T
I
OUT
NOTE:
2986 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
–55 to +125 –65 to +135
–55 to +125 –65 to +150
1.0
50
1.0
50
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
G
ND
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
0.8
Unit
V
V
V
V
NOTE:
2986 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTE:
2986 tbl 05
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
V
CC
5V
±
10%
5V
±
10%
2986 tbl 06
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%)
IDT7187S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
V
CC
= Max.,
V
IN
= GND to V
CC
MIL.
COM’L.
MIL.
COM’L.
Min.
—
—
—
—
—
2.4
Max.
10
5
10
5
0.5
0.4
—
IDT7187L
Min.
—
—
—
—
—
—
2.4
Max.
5
2
5
2
0.5
0.4
—
Unit
µA
µA
V
V
2986 tbl 07
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
I
OL
= 10mA, V
CC
= Min.
I
OL
= 8mA, V
CC
= Min.
I
OH
= –4mA, V
CC
= Min.
6.1
3
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
7187S15
(3)
7187S20
7187L20
Symbol
I
CC1
Parameter
Operating Power
Supply Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = 0
(2)
Dynamic Operating
Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = f
MAX(2)
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(2)
Full Standby Power
Supply Current (CMOS
Level)
CS
≥
V
HC
,
V
CC
=Max., V
IN
≥
V
HC
or
V
IN
≤
V
LC
, f = 0
(2)
Power
S
L
S
L
S
L
S
L
Com’l.
7187S25
7187L25
7187S35
7187L35
7187S45 7187S55/70 7187S85
7187L45 7187L55/70 7187L85
Mil.
Com’l.
Mil.
Com’l.
Mil.
Mil. Com’l. Mil.
(3)
Com’l.
Mil. Com’l.
Mil. Com’l.
Unit
mA
100
—
140
—
60
—
20
—
—
—
—
—
—
—
—
—
90
70
105
85
90
70
105
85
—
—
—
—
—
—
—
—
105
85
120
100
50
40
20
1.5
—
—
—
—
—
—
—
—
105
85
120
95
50
35
20
1.5
—
—
—
—
—
105
85
120
90
50
—
—
—
—
—
105
85
120
90
50
28
20
1.5
I
CC2
130 140 120 130
110 120 100 110
55
40
15
0.3
65
60
20
1.5
50
35
15
0.3
55
50
20
1.5
mA
I
SB
mA
— 30/28 —
—
—
20
1.5
—
—
I
SB1
mA
NOTES:
1. All values are maximum guaranteed values.
2. At f = f
MAX
address and data inputs are cycling at the maximum frequency of read cycles of 1/t
RC
. f = 0 means no input lines change.
3. These specs are preliminary.
2986 tbl 06
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) V
HC
= V
CC
- 0.2V, V
LC
= 0.2V
Typ.
(1)
V
CC
@
Symbol
V
DR
I
CCDR
t
CDR(3)
t
R
(3)
(3)
Max.
V
CC
@
2.0V
—
600
150
—
—
2
3.0V
—
900
225
—
—
2
Unit
V
µA
ns
ns
µA
2986 tbl 09
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
Test Condition
—
MIL.
COM’L.
Min.
2.0
—
—
0
t
RC(2)
—
2.0v
—
10
10
—
—
—
3.0V
—
15
15
—
—
—
CS
≥
V
HC
V
IN
≥
V
HC
or
≤
V
LC
|I
LI
|
NOTES:
1. T
A
= +25°C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed, but not tested.
LOW V
CC
DATA RETENTION WAVEFORM
DATA
RETENTION
MODE
V
CC
4.5V
t
CDR
V
DR
≥
2V
4.5V
t
R
V
IH
V
DR
2986 drw 07
CS
V
IH
6.1
4
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2986 tbl 10
5V
480
Ω
DATA
OUT
255
Ω
30pF*
5V
480Ω
DATA
OUT
255Ω
5pF*
2986 drw 08
2986 drw 09
Figure 1. AC Test Load
*Includes scope and jig capacitances
Figure 2. AC Test Load
(for t
HZ
, t
LZ
, t
WZ
and t
OW
)
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
7187S15
(1)
/20
7187L20
7187S25
7187L25
7187S35/45
(2)
7187L35/45
(2)
7187S55
(2)
7187L55
(2)
7187S70
(2)
7187L70
(2)
7187S85
(2)
7187L85
(2)
Symbol
Read Cycle
t
RC
t
AA
t
ACS
t
OH
t
LZ(3)
t
HZ(3)
t
PU(3)
t
PD(3)
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change
Output Selection to Output in Low-Z
Chip Deselect to Output in High-Z
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
15/20
—
—
5
5
—
0
—
—
15/20
15/20
—
—
6
—
15/20
25
—
—
5
5
—
0
—
—
25
25
—
—
12
—
20
35/45
—
—
5
5
—
0
—
—
35/45
35/45
—
—
17/20
—
30/35
55
—
—
5
5
—
0
—
—
55
55
—
—
30
—
35
70
—
—
5
5
—
0
—
—
70
70
—
—
30
—
35
85
—
—
5
5
—
0
—
—
85
85
—
—
40
—
40
ns
ns
ns
ns
ns
ns
ns
ns
2986 tbl 11
NOTES:
1. 0° to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed but not tested.
6.1
5
电源技术
