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IDT7207L35D

32K X 9 OTHER FIFO, 15 ns, PQCC32
32K × 9 其他先进先出, 15 ns, PQCC32

器件类别:存储   

厂商名称:IDT(艾迪悌)

厂商官网:http://www.idt.com/

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器件参数
参数名称
属性值
功能数量
1
端子数量
32
最大工作温度
70 Cel
最小工作温度
0.0 Cel
最大供电/工作电压
5.5 V
最小供电/工作电压
4.5 V
额定供电电压
5 V
最大存取时间
15 ns
加工封装描述
塑料, LCC-32
状态
ACTIVE
工艺
CMOS
包装形状
矩形的
包装尺寸
芯片 CARRIER
表面贴装
Yes
端子形式
J BEND
端子间距
1.27 mm
端子涂层
锡 铅
端子位置
包装材料
塑料/环氧树脂
温度等级
COMMERCIAL
内存宽度
9
组织
32K × 9
存储密度
294912 deg
操作模式
ASYNCHRONOUS
位数
32768 words
位数
32K
周期
25 ns
内存IC类型
其他先进先出
文档预览
CMOS ASYNCHRONOUS FIFO
32,768 x 9
Integrated Device Technology, Inc.
IDT7207
FEATURES:
• 32768 x 9 storage capacity
• High-speed: 15ns access time
• Low power consumption
— Active: 660mW (max.)
— Power-down: 44mW (max.)
• Asynchronous and simultaneous read and write
• Fully expandable in both word depth and width
• Pin and functionally compatible with IDT720x family
• Status Flags: Empty, Half-Full, Full
• Retransmit capability
• High-performance CMOS technology
• Military product compliant to MIL-STD-883, Class B
• Industrial temperature range (-40
o
C to +85
o
C) is avail-
able, tested to military electrical specifications
DESCRIPTION:
The IDT7207 is a monolithic dual-port memory buffer with
internal pointers that load and empty data on a first-in/first-out
basis. The device uses Full and Empty flags to prevent data
overflow and underflow and expansion logic to allow for
unlimited expansion capability in both word size and depth.
Data is toggled in and out of the device through the use of
the Write ( ) and Read ( ) pins.
The devices 9-bit width provides a bit for a control or parity
at the user’s option. It also features a Retransmit ( ) capa-
bility that allows the read pointer to be reset to its initial position
when
is pulsed LOW. A Half-Full Flag is available in the
single device and width expansion modes.
The IDT7207 is fabricated using IDT’s high-speed CMOS
technology. It is designed for applications requiring asynchro-
nous and simultaneous read/writes in multiprocessing, rate
buffering, and other applications.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B.
W
R
RT
RT
FUNCTIONAL BLOCK DIAGRAM
WRITE
CONTROL
DATA INPUTS
(D
0
–D
8
)
W
WRITE
POINTER
RAM ARRAY
32,768 x 9
READ
POINTER
THREE-
STATE
BUFFERS
DATA OUTPUTS
(Q
0
–Q
8
)
RS
R
READ
CONTROL
RESET
LOGIC
FLAG
LOGIC
EF
FF
FL RT
/
XI
EXPANSION
LOGIC
XO HF
/
3140 drw 01
The IDT logo is a registered trademark of Integrated Device Techology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996
Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
DECEMBER 1996
DSC-3140/2
5.05
1
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9
MILITARY AND COMMERCIAL TEMPERATURE RANGES
W
D
8
D
3
D
2
D
1
D
0
XI
FF
Q
3
Q
8
GND
NC
R
Q
4
Q
5
Q
0
Q
1
Q
2
Q
3
Q
8
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
P28-1
D28-1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
D
4
D
5
D
6
D
7
FL/RT
RS
EF
XO/HF
INDEX
D
2
D
1
D
0
XI
FF
Q
7
Q
6
Q
5
Q
4
R
3140 drw 02
14
15
16
17
18
19
20
Q
0
Q
1
NC
Q
2
5
6
7
8
9
10
11
12
13
32
31
30
1
4
3
2
D
3
D
8
W
NC
Vcc
D
4
D
5
PIN CONFIGURATIONS
J32-1
&
L32-1
29
28
27
26
25
24
23
22
21
D
6
D
7
NC
FL
/
RT
RS
EF
XO HF
/
Q
7
Q
6
3140 drw 03
DIP
TOP VIEW
PLCC/LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
Rating
Terminal
Voltage with
Respect to
GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
–0.5 to + 7.0
Military
–0.5 to +7.0
Unit
V
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CCM
V
CCC
GND
V
IH
(1)
V
IH
(1)
V
IL
(1)
Parameter
Military Supply
Voltage
Commercial Supply
Voltage
Supply Voltage
Input High Voltage
Commercial
Input High Voltage
Military
Input Low Voltage
Commercial and
Military
Min.
4.5
4.5
0
2.0
2.2
Typ.
5.0
5.0
0
Max.
5.5
5.5
0
0.8
Unit
V
V
V
V
V
V
T
A
T
BIAS
T
STG
I
OUT
0 to +70
–55 to +125
–55 to + 125
50
–55 to +125
–65 to +135
–65 to +155
50
°
C
°
C
°
C
mA
NOTE:
3140 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
3140 tbl 02
DC ELECTRICAL CHARACTERISTICS FOR THE 7207
(Commercial: V
CC
= 5.0V±10%, T
A
= 0°C to +70°C; Military: V
CC
= 5.0V±10%, T
A
= –55°C to +125°C)
IDT7207
Commercial
t
A
= 15, 20, 25, 35, 50 ns
Symbol
I
LI(1)
I
LO(2)
V
OH
V
OL
I
CC1(3)
I
CC2(3)
I
CC3
(L)
(3)
IDT7207
Military
t
A
= 20, 30, 50 ns
Min.
–1
–10
2.4
Typ.
Max.
1
10
0.4
150
(4)
Parameter
Input Leakage Current (Any Input)
Output Leakage Current
Output Logic “1” Voltage I
OH
= –2mA
Output Logic “0” Voltage I
OL
= 8mA
Active Power Supply Current
Standby Current (
R
=
W
=
RS
=
FL
/
RT
=V
IH
)
Power Down Current (All Input = V
CC
- 0.2V)
Min.
–1
–10
2.4
Typ.
Max.
1
10
0.4
120
8
(4)
Unit
µA
µA
V
V
mA
mA
mA
3140 tbl 04
12
25
12
NOTES:
1. Measurements with 0.4
V
IN
V
CC
.
2. R
V
IH
, 0.4
V
OUT
V
CC
.
3. I
CC
measurements are made with outputs open (only capacitive loading).
4. Tested at f = 20MHz.
5.05
2
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(1)
(Commercial: V
CC
= 5V
±
10%, T
A
= 0°C to +70°C; Military: V
CC
= 5V
±
10%, T
A
= –55°C to +125°C)
Com'l
7207L15
Symbol
fS
tRC
tA
tRR
tRPW
tRLZ
tWLZ
tDV
tRHZ
tWC
tWPW
tWR
tDS
tDH
tRSC
tRS
tRSS
tRTR
tRTC
tRT
tRTS
tRSR
tEFL
tRTF
tREF
tRFF
tRPE
tWEF
tWFF
tWHF
tRHF
tWPF
tXOL
tXOH
tXI
tXIR
tXIS
Parameters
Shift Frequency
Read Cycle Time
Access Time
Read Recovery Time
Read Pulse Width
(2)
Com'l & Mil.
7207L20
30
10
20
5
5
5
30
20
10
12
0
30
20
20
10
30
20
20
10
20
20
20
10
10
33.3
20
15
30
30
30
20
20
20
20
30
30
20
20
Com'l
7207L25
35
10
25
5
5
5
35
25
10
15
0
35
25
25
10
35
25
25
10
25
25
25
10
10
28.5
25
18
35
35
35
25
25
25
25
35
35
25
25
Military
7207L30
40
10
30
5
5
5
40
30
10
18
0
40
30
30
10
40
30
30
10
30
30
30
10
10
25
30
20
40
40
40
30
30
30
30
40
40
30
30
Com'l
7207L35
45
10
35
5
10
5
45
35
10
18
0
45
35
35
10
45
35
35
10
35
35
35
10
15
22.2
35
20
45
45
45
30
30
30
30
45
45
35
35
Com'l & Mil.
7207L50
Min. Max. Unit
65
15
50
10
15
5
65
50
15
30
5
65
50
50
15
65
50
50
15
50
50
50
10
15
15
50
30
65
65
65
45
45
45
45
65
65
50
50
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3140 tbl 05
Min.
25
10
15
5
5
5
(3)
Max. Min. Max. Min. Max. Min. Max. Min. Max.
40
15
15
25
25
25
15
15
15
15
25
25
15
15
Read LOW to Data Bus LOW
(3)
Write HIGH to Data Bus Low-Z
(3, 4)
Data Valid from Read HIGH
Read HIGH to Data Bus High-Z
Write Cycle Time
Write Pulse Width
(2)
Write Recovery Time
Data Set-up Time
Data Hold Time
Reset Cycle Time
Reset Pulse Width
(2)
Reset Set-up Time
(3)
Reset Recovery Time
Retransmit Cycle Time
Retransmit Pulse Width
(2)
Retransmit Set-up Time
(3)
Retransmit Recovery Time
Reset to EF LOW
Retransmit LOW to Flags Valid
Read LOW to EF LOW
Read HIGH to FF HIGH
Read Pulse Width after EF HIGH
Write HIGH to EF HIGH
Write LOW to FF LOW
Write LOW to HF Flag LOW
Read HIGH to HF Flag HIGH
Write Pulse Width after FF HIGH
Read/Write LOW to XO LOW
Read/Write HIGH to XO HIGH
XI Pulse Width
(2)
XI Recovery Time
XI Set-up Time
25
15
10
11
0
25
15
15
10
25
15
15
10
15
15
15
10
10
tHFH, tFFH Reset to HF and FF HIGH
NOTES:
1. Timings referenced as in AC Test Conditions.
2. Pulse widths less than minimum are not allowed.
3. Values guaranteed by design, not currently tested.
4. Only applies to read data flow-through mode.
5.05
3
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
See Figure 1
3140
t
bl 07
5V
1.1KΩ
D.U.T.
680Ω
30pF*
CAPACITANCE
(1)
(T
A
= +25°C, f = 1.0 MHz)
Symbol
C
IN
(1)
C
OUT
(1,2)
Parameter
Input Capacitance
Output Capacitance
Condition
V
IN
= 0V
V
OUT
= 0V
Max.
10
10
Unit
pF
pF
3140
t
bl 08
OR EQUIVALENT CIRCUIT
3140 drw 04
NOTES:
1. This parameter is sampled and not 100% tested.
2. With output deselected.
Figure 1. Output Load
*Includes jig and scope capacitances.
SIGNAL DESCRIPTIONS
Inputs:
DATA IN (D
0
–D
8
)
— Data inputs for 9-bit wide data.
Controls:
RESET (
RS
) —
Reset is accomplished whenever the Reset
(
RS
) input is taken to a LOW state. During reset, both internal
read and write pointers are set to the first location. A reset is
required after power-up before a write operation can take place.
Both the Read Enable (
R
) and Write Enable (
W
) inputs must
be in the HIGH state during the window shown in Figure 2
(i.e. t
RSS
before the rising edge of
RS
) and should not
change until t
RSR
after the rising edge of
RS
.
WRITE ENABLE (
W
) —
A write cycle is initiated on the falling
edge of this input if the Full Flag (
FF
) is not set. Data set-up and
hold times must be adhered-to, with respect to the rising edge
of the Write Enable (
W
). Data is stored in the RAM array
sequentially and independently of any on-going read operation.
After half of the memory is filled, and at the falling edge of the
next write operation, the Half-Full Flag (
HF
) will be set to LOW,
and will remain set until the difference between the write pointer
and read pointer is less-than or equal to one-half of the total
memory of the device. The Half-Full Flag (
HF
) is reset by the
rising edge of the read operation.
To prevent data overflow, the Full Flag (
FF
) will go LOW on
the falling edge of the last write signal, which inhibits further write
operations. Upon the completion of a valid read operation, the
Full Flag (
FF
) will go HIGH after t
RFF
, allowing a new valid write
to begin. When the FIFO is full, the internal write pointer is
blocked from
W
, so external changes in
W
will not affect the FIFO
when it is full.
READ ENABLE (
R
) —
A read cycle is initiated on the falling
edge of the Read Enable (
R
), provided the Empty Flag (
EF
) is not
set. The data is accessed on a First-In/First-Out basis, inde-
pendent of any ongoing write operations. After Read Enable (
R
)
goes HIGH, the Data Outputs (Q
0
through Q
8
) will return to a
high-impedance condition until the next Read operation. When
all the data has been read from the FIFO, the Empty Flag (
EF
)
will go LOW, allowing the “final” read cycle but inhibiting further
read operations, with the data outputs remaining in a high-
impedance state. Once a valid write operation has been accom-
plished, the Empty Flag (
EF
) will go HIGH after t
WEF
and a valid
Read can then begin. When the FIFO is empty, the internal read
pointer is blocked from
R
so external changes will not affect the
FIFO when it is empty.
FIRST LOAD/RETRANSMIT (
FL
/
RT
) —
This is a dual-
purpose input. In the Depth Expansion Mode, this pin is
grounded to indicate that it is the first device loaded (see
Operating Modes). The Single Device Mode is initiated by
grounding the Expansion In (
XI
).
The IDT7207 can be made to retransmit data when the
Retransmit Enable Control (
RT
) input is pulsed LOW. A retrans-
mit operation will set the internal read pointer to the first location
and will not affect the write pointer. The status of the Flags will
change depending on the relative locations of the read and write
pointers. Read Enable (
R
) and Write Enable (
W
) must be in the
HIGH state during retransmit. This feature is useful when less
than 32,768 writes are performed between resets. The retrans-
mit feature is not compatible with the Depth Expansion Mode.
EXPANSION IN (
XI
)
— This input is a dual-purpose pin.
Expansion In (
XI
) is grounded to indicate an operation in the
single device mode. Expansion In (
XI
) is connected to Expan-
sion Out (
XO
) of the previous device in the Depth Expansion or
Daisy-Chain Mode.
5.05
4
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9
MILITARY AND COMMERCIAL TEMPERATURE RANGES
Outputs:
FULL FLAG (
FF
)
— The Full Flag (
FF
) will go LOW, inhibiting
further write operations, when the device is full. If the read
pointer is not moved after Reset (
RS
), the Full Flag (
FF
) will go
LOW after 32,768 writes.
EMPTY FLAG (
EF
)
— The Empty Flag (
EF
) will go LOW,
inhibiting further read operations, when the read pointer is equal
to the write pointer, indicating that the device is empty.
EXPANSION OUT/HALF-FULL FLAG (
XO
/
HF
) —
This is a
dual-purpose output. In the single device mode, when Expan-
sion In (
XI
) is grounded, this output acts as an indication of a half-
full memory.
After half of the memory is filled, and at the falling edge of the
next write operation, the Half-Full Flag (
HF
) will be set to LOW
t
RS
RS
and will remain set until the difference between the write pointer
and read pointer is less than or equal to one half of the total
memory of the device. The Half-Full Flag (
HF
) is then reset by
the rising edge of the read operation.
In the Depth Expansion Mode, Expansion In (
XI
) is con-
nected to Expansion Out (
XO
) of the previous device. This
output acts as a signal to the next device in the Daisy Chain by
providing a pulse to the next device when the previous device
reaches the last location of memory. There will be an
XO
pulse
when the Write pointer reaches the last location of memory, and
an additional
XO
pulse when the Read pointer reaches the last
location of memory.
DATA OUTPUTS (Q
0
-Q
8
) —
Q
0
-Q
8
are data outputs for 9-
bit wide data. These outputs are in a high-impedance condition
whenever Read (
R
) is in a HIGH state.
t
RSC
t
RSS
W
t
RSR
t
RSS
R
t
EFL
EF
t
HFH
, t
FFH
HF FF
,
3140 drw 05
NOTE:
1.
W
and
R
= V
IH
around the rising edge of
RS
.
Figure 2. Reset
t
RC
t
A
R
t
RPW
t
RR
t
A
t
DV
DATA
t
WC
OUT
t
RLZ
Q
0
–Q
8
t
RHZ
DATA
OUT
VALID
VALID
t
WPW
W
t
WR
t
DS
D
0
–D
8
DATA
IN
t
DH
VALID
DATA
IN
VALID
3140 drw 06
Figure 3. Asynchronous Write and Read Operation
5.05
5
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