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IDT72V3613L12PF

FIFO, 64X36, 8ns, Synchronous, CMOS, PQFP120, TQFP-120

器件类别:存储   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
QFP
包装说明
LFQFP, QFP120,.63SQ,16
针数
120
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Is Samacsys
N
最长访问时间
8 ns
其他特性
MAIL BOX BYPASS REGISTER
最大时钟频率 (fCLK)
83 MHz
周期时间
12 ns
JESD-30 代码
S-PQFP-G120
JESD-609代码
e0
长度
14 mm
内存密度
2304 bit
内存集成电路类型
OTHER FIFO
内存宽度
36
湿度敏感等级
4
功能数量
1
端子数量
120
字数
64 words
字数代码
64
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
64X36
可输出
YES
封装主体材料
PLASTIC/EPOXY
封装代码
LFQFP
封装等效代码
QFP120,.63SQ,16
封装形状
SQUARE
封装形式
FLATPACK, LOW PROFILE, FINE PITCH
并行/串行
PARALLEL
峰值回流温度(摄氏度)
240
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.6 mm
最大待机电流
0.0004 A
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
GULL WING
端子节距
0.4 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
20
宽度
14 mm
Base Number Matches
1
文档预览
3.3 VOLT CMOS CLOCKED FIFO WITH
BUS-MATCHING AND BYTE SWAPPING
64 x 36
FEATURES:
IDT72V3613
64 x 36 storage capacity FIFO buffering data from Port A to Port B
Supports clock frequencies up to 67MHz
Fast access times of 10ns
Free-running CLKA and CLKB may be asynchronous or
coincident (permits simultaneous reading and writing of data on
a single clock edge)
Mailbox bypass registers in each direction
Dynamic Port B bus sizing of 36 bits (long word), 18 bits (word),
and 9 bits (byte)
Selection of Big- or Little-Endian format for word and byte bus
sizes
Three modes of byte-order swapping on Port B
Programmable Almost-Full and Almost-Empty flags
Microprocessor interface control logic
FF
,
AF
flags synchronized by CLKA
EF
,
AE
flags synchronized by CLKB
Passive parity checking on each Port
Parity Generation can be selected for each Port
Available in space saving 120-pin thin quad flat package (TQFP)
Green parts available, see ordering information
DESCRIPTION:
The IDT72V3613 is designed to run off a 3.3V supply for exceptionally low-
power consumption. This device is a monolithic, high-speed, low-power,
CMOS synchronous (clocked) FIFO memory which supports clock frequencies
up to 67 MHz and has read-access times as fast as 10 ns. The 64 x 36 dual-
port SRAM FIFO buffers data from port A to port B. The FIFO operates in IDT
Standard mode and has flags to indicate empty and full conditions, and two
programmable flags, Almost-Full (AF) and Almost-Empty (AE), to indicate when
a selected number of words is stored in memory. FIFO data on port B can be
output in 36-bit, 18-bit, and 9-bit formats with a choice of Big- or Little-Endian
configurations. Three modes of byte-order swapping are possible with any bus-
size selection. Communication between each port can bypass the FIFO via two
FUNCTIONAL BLOCK DIAGRAM
CLKA
CSA
W/RA
ENA
MBA
Port-A
Control
Logic
Parity
Gen/Check
MBF1
PEFB
PGB
Bus-Matching and
Output
Byte Swapping
Register
RST
ODD/
EVEN
Mail 1
Register
Parity
Generation
Input
Register
Device
Control
RAM ARRAY
64 x 36
Output
Register
36
64 x 36
36
Write
Pointer
FF
AF
FIFO
Read
Pointer
B
0
- B
35
EF
AE
CLKB
CSB
W/RB
ENB
BE
SIZ0
SIZ1
SW0
SW1
Status Flag
Logic
FS
0
FS
1
A
0
- A
35
PGA
PEFA
MBF2
Programmable
Flag Offset
Registers
Port-B
Port-B
Control
Control
Logic
Logic
Parity
Gen/Check
Mail 2
Register
4661 drw 01
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. SyncFIFO is a trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGE
1
JANUARY 2014
DSC-4661/5
©2014
Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
IDT72V3613 3.3V, CMOS CLOCKED FIFO WITH
BUS-MATCHING AND BYTE SWAPPING 64 x 36
COMMERCIAL TEMPERATURE RANGE
DESCRIPTION (CONTINUED)
36-bit mailbox registers. Each mailbox register has a flag to signal when new
mail has been stored. Parity is checked passively on each port and may be
ignored if not desired. Parity generation can be selected for data read from each
port. Two or more devices may be used in parallel to create wider data paths.
The IDT72V3613 is a synchronous (clocked) FIFO, meaning each port
employs a synchronous interface. All data transfers through a port are gated
to the LOW-to-HIGH transition of a continuous (free-running) port clock by
enable signals. The continuous clocks for each port are independent of one
another and can be asynchronous or coincident. The enables for each port are
arranged to provide a simple interface between microprocessors and/or buses
with synchronous interfaces.
The Full Flag (FF) and Almost-Full (AF) flag of the FIFO are two-stage
synchronized to the port clock (CLKA) that writes data into its array. The Empty
Flag (EF) and Almost-Empty (AE) flag of the FIFO are two-stage synchronized
to the port clock (CLKB) that reads data from its array.
The IDT72V3613 is characterized for operation from 0°C to 70°C. This
device is fabricated using high speed, submicron CMOS technology.
PIN CONFIGURATION
A
24
A
25
A
26
V
CC
A
27
A
28
A
29
GND
A
30
A
31
A
32
A
33
A
34
A
35
GND
B
35
B
34
B
33
B
32
B
31
B
30
GND
B
29
B
28
B
27
V
CC
B
26
B
25
B
24
B
23
A
23
A
22
A
21
GND
A
20
A
19
A
18
A
17
A
16
A
15
A
14
A
13
A
12
A
11
A
10
GND
A
9
A
8
A
7
V
CC
A
6
A
5
A
4
A
3
GND
A
2
A
1
A
0
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
120
119
118
117
116
115
114
113
112
111
110
109
108
107
106
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
B
22
B
21
GND
B
20
B
19
B
18
B
17
B
16
B
15
B
14
B
13
B
12
B
11
B
10
GND
B
9
B
8
B
7
V
CC
B
6
B
5
B
4
B
3
GND
B
2
B
1
B
0
EF
AE
NC
AF
FF
CSA
ENA
CLKA
W/RA
V
CC
PGA
PEFA
MBF2
MBA
FS
1
FS
0
ODD/EVEN
RST
GND
BE
SW1
SW0
SIZ1
SIZ0
MBF1
PEFB
PGB
V
CC
W/RB
CLKB
ENB
CSB
NC
TQFP (PNG120, order code: PF)
TOP VIEW
2
NOTES:
1. Pin 1 idenifier in corner.
2. NC = No internal connection
4661 drw 02
IDT72V3613 3.3V, CMOS CLOCKED FIFO WITH
BUS-MATCHING AND BYTE SWAPPING 64 x 36
COMMERCIAL TEMPERATURE RANGE
PIN DESCRIPTION
Symbol
A
0
-A
35
AE
AF
B
0
-B
35
BE
CLKA
CLKB
Name
Port A Data
Almost-Empty Flag
Almost-Full Flag
Port B Data
Big-Endian Select
Port A Clock
Port B Clock
I/O
I/O
O
Port B
O
Port A
I/O
I
I
I
36-bit bidirectional data port for side A.
Programmable Almost-Empty flag synchronized to CLKB. It is LOW when Port B the number of 36-bit
words in the FIFO is less than or equal to the value in the offset register, X.
Programmable Almost-Full flag synchronized to CLKA. It is LOW when the number of 36-bit empty
empty locations in the FIFO is less than or equal to the value in the offset register, X.
36-bit bidirectional data port for side B
Selects the bytes on port B used during byte or word FIFO reads. A LOW on
BE
selects the most
significant bytes on B0-B35 for use, and a HIGH selects the least significant bytes.
CLKA is a continuous clock that synchronizes all data transfers through port A and can be asynchronous
or coincident to CLKB.
FF
and
AF
are synchronized to the LOW-to-HIGH transition of CLKA.
CLKB is a continuous clock that synchronizes all data transfers through port B and can be asynchronous
or coincident to CLKA. Port-B byte swapping and data port sizing operations are also synchronous to the
LOW-to-HIGH transition of CLKB.
EF
and
AE
are synchronized to the LOW-to-HIGH transition of CLKB.
CSA
must be LOW to enable a LOW-to-HIGH transition of CLKA to read or write data on port A. The A0-
A35 outputs are in the high-impedance state when
CSA
is HIGH.
CSB
must be LOW to enable a LOW-to-HIGH transition of CLKB to read or write data on port B. The B0-
B35 outputs are in the high-impedance state when
CSB
is HIGH.
EF
is synchronized to the LOW-to-HIGH transition of CLKB. When
EF
is LOW, the FIFO is empty, and
reads from its memory are disabled. Data can be read from the FIFO to its output register when
EF
is
HIGH.
EF
is forced LOW when the device is reset and is set HIGH by the second LOW-to-HIGH
transition of CLKB after data is loaded into empty FIFO memory.
ENA must be HIGH to enable a LOW-to-HIGH transition of CLKA to read or write data on port A.
ENB must be HIGH to enable a LOW-to-HIGH transition of CLKB to read or write data on port B.
FF
is synchronized to the LOW-to-HIGH transition of CLKA. When
FF
is LOW, the FIFO is full, and
writes to its memory are disabled.
FF
is forced LOW when the device is reset and is set HIGH by the
second LOW-to-HIGH transition of CLKA after reset.
The LOW-to-HIGH transition of
RST
latches the values of FS0 and FS1, which loads one of four preset
values into the Almost-Full flag and Almost-Empty flag offsets.
A high level on MBA chooses a mailbox register for a port A read or write operation. When the A0-A35
outputs are active, mail2 register data is output.
MBF1
is set LOW by a LOW-to-HIGH transition of CLKA that writes data to the mail1 register. Writes to the
mail1 register are inhibited while
MBF1
is set LOW.
MBF1
is set HIGH by a LOW-to-HIGH transition of
CLKB when a port B read is selected and both SIZ1 and SIZ0 are HIGH.
MBF1
is set HIGH when the
device is reset.
MBF2
is set LOW by a LOW-to-HIGH transition of CLKB that writes data to the mail2 register. Writes to the
mail2 register are inhibited while
MBF2
is set LOW.
MBF2
is set HIGH by a LOW-to-HIGH transition of
CLKA when a port A read is selected and MBA is HIGH.
MBF2
is set HIGH when the device is reset.
Odd parity is checked on each port when ODD/EVEN is HIGH, and even parity is checked when
ODD/EVEN is LOW. ODD/EVEN also selects the type of parity generated for each port if parity
generation is enabled for a read operation.
When any valid byte applied to terminals A0-A35 fails parity,
PEFA
is LOW. Bytes (Port A) are organized
as A0-A8, A9-A17, A18-A26, and A27-A35, with the most significant bit of each byte serving as the parity
bit. The type of parity checked is determined by the state of the ODD/EVEN input.
The parity trees used to check the A0-A35 inputs are shared by the mail2 register to generate parity if
parity generation is selected by PGA. Therefore, if a mail2 read with parity generation is set up by having
CSA
LOW, ENA HIGH, W/RA LOW, MBA HIGH and PGA HIGH, the
PEFA
flag is forced HIGH
regardless of the state of the A0-A35 inputs.
Description
CSA
CSB
EF
Port A Chip Select
Port B Chip Select
Empty Flag
I
I
O
Port B
ENA
ENB
FF
Port A Enable
Port B Enable
Full Flag
I
I
O
Port A
I
I
O
FS
1
, FS
0
Flag Offset Selects
MBA
MBF1
Port A Mailbox
Select
Mail1 Register Flag
MBF2
Mail2 Register Flag
O
ODD/
EVEN
PEFA
Odd/Even Parity
Select
Port A Parity Error
Flag
I
O
3
IDT72V3613 3.3V, CMOS CLOCKED FIFO WITH
BUS-MATCHING AND BYTE SWAPPING 64 x 36
COMMERCIAL TEMPERATURE RANGE
PIN DESCRIPTION (CONTINUED)
Symbol
PEFB
Name
Port B Parity Error
Flag
I/O
Description
O
When any valid byte applied to terminals B0-B35 fails parity,
PEFB
is LOW. Bytes are organized as
(Port B) B0-B8, B9-B17, B-18-B26, and B27-B35, with the most significant bit of each byte serving as the parity
bit. A byte is valid when it is used by the bus size selected for port B. The type of parity checked is
determined by the state of the ODD/EVEN input.
The parity trees used to check the B0-B35 inputs are shared by the mail1 register to generate parity if
parity generation is selected by PGB. Therefore, if a mail1 read with parity generation is set up by having
CSB
LOW, ENB HIGH, W/RB LOW, SIZ1 and SIZ0 HIGH and PGB HIGH, the
PEFB
flag is forced HIGH
regardless of the state of the B0-B35 inputs.
PGA
Port A Parity
Generation
Port B Parity
Generation
Reset
I
Parity is generated for data reads from the mail2 register when PGA is HIGH. The type of parity
generated is selected by the state of the ODD/EVEN input. Bytes are organized at A0-A8, A9-A17, A18-
A26, and A27-A35. The generated parity bits are output in the most significant bit of each byte.
Parity is generated for data reads from port B when PGB is HIGH. The type of parity generated is
selected by the state of the ODD/EVEN input. Bytes are organized as B0-B8, B9-B17, B18-B26, and
B27-B35. The generated parity bits are output in the most significant bit of each byte.
To reset the device, four LOW-to-HIGH transitions of CLKA and four LOW-to-HIGH transitions of CLKB
must occur while
RST
is LOW. This sets the
AF, MBF1,
and
MBF2
flags HIGH and the
EF, AE,
and
FF
flags LOW. The LOW-to-HIGH transition of
RST
latches the status of the FS1 and FS0 inputs to select
Almost-Full flag and Almost-Empty flag offset.
PGB
I
RST
I
SIZ0,
SIZ1
Port B Bus Size
Selects
I
A LOW-to-HIGH transition of CLKB latches the states of SIZ0, SIZ1, and
BE,
and the following LOW-to-
(Port B) HIGH transition of CLKB implements the latched states as a port B bus size. Port B bus sizes can be long
word, word, or byte. A HIGH on both SIZ0 and SIZ1 chooses a mailbox register for a port B 36-bit write or
read.
I
At the beginning of each long word FIFO read, one of four modes of byte-order swapping is selected by
(Port B) SW0 and SW1. The four modes are no swap, byte swap, word swap, and byte-word swap. Byte-order
swapping is possible with any bus-size selection.
I
I
A HIGH selects a write operation and a LOW selects a read operation on port A for a LOW-to-HIGH
transition of CLKA. The A0-A35 outputs are in the high-impedance state when W/RA is HIGH.
A HIGH selects a write operation and a LOW selects a read operation on port B for a LOW-to-HIGH
transition of CLKB. The B0-B35 outputs are in the high-impedance state when W/RB is HIGH.
SW0,
SW1
W/RA
W/RB
Port B Byte Swap
Selects
Port A Write/Read
Select
Port B Write/Read
Select
4
IDT72V3613 3.3V, CMOS CLOCKED FIFO WITH
BUS-MATCHING AND BYTE SWAPPING 64 x 36
COMMERCIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS OVER OPERATING FREE-AIR TEMPERATURE
RANGE (unless otherwise noted)
(1)
Symbol
V
CC
V
I
(2)
V
O
(2)
I
IK
I
OK
I
OUT
I
CC
T
STG
Supply Voltage Range
Input Voltage Range
Output Voltage Range
Input Clamp Current, (V
I
< 0 or V
I
> V
CC
)
Output Clamp Current, (V
O
< 0 or V
O
> V
CC
)
Continuous Output Current, (V
O
= 0 to V
CC
)
Continuous Current Through V
CC
or GND
Storage Temperature Range
Rating
Commercial
–0.5 to +4.6
–0.5 to V
CC
+0.5
–0.5 to V
CC
+0.5
±20
±50
±50
±500
–65 to 150
Unit
V
V
V
mA
mA
mA
mA
°
C
NOTES:
1. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded provided the input and output current ratings are observed.
RECOMMENDED OPERATING
CONDITIONS
Symbol
V
CC
V
IH
V
IL
I
OH
I
OL
T
A
Parameter
Supply Voltage
HIGH Level Input Voltage
LOW-Level Input Voltage
HIGH-Level Output Current
LOW-Level Output Current
Operating Free-air
Temperature
Min. Typ.
3.0
2
0
3.3
Max.
3.6
V
CC
+0.5
0.8
–4
8
70
Unit
V
V
V
mA
mA
°
C
ELECTRICAL CHARACTERISTICS OVER RECOMMENDED OPERATING
FREE-AIR TEMPERATURE RANGE (unless otherwise noted)
IDT72V3613
Commercial
t
CLK
= 15 ns
Min.
Typ.
(1)
Max.
2.4
4
8
0.5
±5
±5
500
Symbol
V
OH
V
OL
I
LI
I
LO
I
CC
(2)
C
IN
C
OUT
Parameter
Output Logic "1" Voltage
Output Logic "0" Voltage
Input Leakage Current (Any Input)
Output Leakage Current
Standby Current
Input Capacitance
Output Capacitance
Test Conditions
V
CC
= 3.0V,
I
OH
= –4 mA
V
CC
= 3.0V,
V
CC
= 3.6V,
V
CC
= 3.6V,
V
CC
= 3.6V,
V
I
= 0,
V
O
= 0,
I
OL
= 8 mA
V
I
= V
CC
or 0
V
O
= V
CC
or 0
V
I
= V
CC
- 0.2V or 0
f = 1 MHz
f = 1 MHZ
Unit
V
V
μA
μA
μA
pF
pF
NOTES:
1. All typical values are at V
CC
= 3.3V, T
A
= 25
°
C.
2. For additional I
CC
information, see Figure 1,
Typical Characteristics: Supply Current (I
CC
) vs. Clock Frequency (f
S
).
5
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参数对比
与IDT72V3613L12PF相近的元器件有:IDT72V3613L15PF8、IDT72V3613L15PF、IDT72V3613L20PF8、IDT72V3613L12PF8、IDT72V3613L20PF。描述及对比如下:
型号 IDT72V3613L12PF IDT72V3613L15PF8 IDT72V3613L15PF IDT72V3613L20PF8 IDT72V3613L12PF8 IDT72V3613L20PF
描述 FIFO, 64X36, 8ns, Synchronous, CMOS, PQFP120, TQFP-120 FIFO, 64X36, 10ns, Synchronous, CMOS, PQFP120, TQFP-120 FIFO, 64X36, 10ns, Synchronous, CMOS, PQFP120, TQFP-120 FIFO, 64X36, 12ns, Synchronous, CMOS, PQFP120, TQFP-120 FIFO, 64X36, 8ns, Synchronous, CMOS, PQFP120, TQFP-120 FIFO, 64X36, 12ns, Synchronous, CMOS, PQFP120, TQFP-120
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 QFP QFP QFP QFP QFP QFP
包装说明 LFQFP, QFP120,.63SQ,16 LFQFP, QFP120,.63SQ,16 LFQFP, QFP120,.63SQ,16 LFQFP, QFP120,.63SQ,16 LFQFP, QFP120,.63SQ,16 LFQFP, QFP120,.63SQ,16
针数 120 120 120 120 120 120
Reach Compliance Code not_compliant _compli _compli not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 8 ns 10 ns 10 ns 12 ns 8 ns 12 ns
其他特性 MAIL BOX BYPASS REGISTER MAIL BOX BYPASS REGISTER MAIL BOX BYPASS REGISTER MAIL BOX BYPASS REGISTER MAIL BOX BYPASS REGISTER MAIL BOX BYPASS REGISTER
最大时钟频率 (fCLK) 83 MHz 66.7 MHz 66.7 MHz 50 MHz 83 MHz 50 MHz
周期时间 12 ns 15 ns 15 ns 20 ns 12 ns 20 ns
JESD-30 代码 S-PQFP-G120 S-PQFP-G120 S-PQFP-G120 S-PQFP-G120 S-PQFP-G120 S-PQFP-G120
JESD-609代码 e0 e0 e0 e0 e0 e0
长度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
内存密度 2304 bit 2304 bi 2304 bi 2304 bit 2304 bit 2304 bit
内存集成电路类型 OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO
内存宽度 36 36 36 36 36 36
湿度敏感等级 4 4 4 4 4 4
功能数量 1 1 1 1 1 1
端子数量 120 120 120 120 120 120
字数 64 words 64 words 64 words 64 words 64 words 64 words
字数代码 64 64 64 64 64 64
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 64X36 64X36 64X36 64X36 64X36 64X36
可输出 YES YES YES YES YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP
封装等效代码 QFP120,.63SQ,16 QFP120,.63SQ,16 QFP120,.63SQ,16 QFP120,.63SQ,16 QFP120,.63SQ,16 QFP120,.63SQ,16
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 240 240 240 240 240 240
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大待机电流 0.0004 A 0.0004 A 0.0004 A 0.0004 A 0.0004 A 0.0004 A
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.4 mm 0.4 mm 0.4 mm 0.4 mm 0.4 mm 0.4 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 20 20 20 20 20 20
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
Base Number Matches 1 1 1 1 1 1
厂商名称 IDT (Integrated Device Technology) - - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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