型号 | IDT8M656S70C | IDT8M656S40C | IDT8M656S50C | IDT8M656S50CB | IDT8M656S60CB | IDT8M656S70CB | IDT8M656S85C | IDT8M656S85CB |
---|---|---|---|---|---|---|---|---|
描述 | SRAM Module, 16KX16, 70ns, CMOS, CDIP40 | SRAM Module, 16KX16, 40ns, CMOS, CDIP40 | SRAM Module, 16KX16, 50ns, CMOS, CDIP40 | SRAM Module, 16KX16, 50ns, CMOS, CDIP40 | SRAM Module, 16KX16, 60ns, CMOS, CDIP40 | SRAM Module, 16KX16, 70ns, CMOS, CDIP40 | SRAM Module, 16KX16, 85ns, CMOS, CDIP40 | SRAM Module, 16KX16, 85ns, CMOS, CDIP40 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
最长访问时间 | 70 ns | 40 ns | 50 ns | 50 ns | 60 ns | 70 ns | 85 ns | 85 ns |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 | R-XDIP-T40 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
端子数量 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 125 °C | 125 °C | 125 °C | 70 °C | 125 °C |
组织 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
封装等效代码 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | 225 | 225 | 225 | 225 | 225 | 260 | 225 | 260 |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大待机电流 | 0.06 A | 0.06 A | 0.06 A | 0.08 A | 0.08 A | 0.08 A | 0.06 A | 0.08 A |
最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
最大压摆率 | 0.36 mA | 0.36 mA | 0.33 mA | 0.36 mA | 0.36 mA | 0.36 mA | 0.36 mA | 0.36 mA |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | MILITARY | COMMERCIAL | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 6 | 30 | 6 |