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IDTQS3VH126Q8

Bus Driver, CB3Q/3VH/3C/2B Series, 4-Func, 1-Bit, True Output, PDSO16, QSOP-16

器件类别:逻辑    逻辑   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
SOIC
包装说明
SSOP,
针数
16
Reach Compliance Code
compliant
系列
CB3Q/3VH/3C/2B
JESD-30 代码
R-PDSO-G16
JESD-609代码
e0
长度
4.9 mm
逻辑集成电路类型
BUS DRIVER
位数
1
功能数量
4
端口数量
2
端子数量
16
最高工作温度
85 °C
最低工作温度
-40 °C
输出特性
3-STATE
输出极性
TRUE
封装主体材料
PLASTIC/EPOXY
封装代码
SSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, SHRINK PITCH
峰值回流温度(摄氏度)
225
传播延迟(tpd)
0.2 ns
认证状态
Not Qualified
座面最大高度
1.7272 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
0.635 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
3.9116 mm
文档预览
IDTQS3VH126
2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
QUICKSWITCH
®
PRODUCTS
2.5V / 3.3V QUAD ACTIVE
HIGH, HIGH BANDWIDTH SWITCH
FEATURES:
• N channel FET switches with no parasitic diode to V
CC
– Isolation under power-off conditions
– No DC path to V
CC
or GND
– 5V tolerant in OFF and ON state
• 5V tolerant I/Os
• Low R
ON
- 4Ω typical
Ω
• Flat R
ON
characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground
bounce
• Excellent R
ON
matching between channels
• V
CC
operation: 2.3V to 3.6V
• High bandwidth - up to 500MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF typical
• Available in QSOP and SOIC packages
IDTQS3VH126
DESCRIPTION:
The QS3VH126 is a high bandwidth bus switch. The QS3VH126 has
very low ON resistance, resulting in under 250ps propagation delay
through the switch. The switches can be turned ON under the control of
individual LVTTL-compatible active high Output Enable signals for bidirec-
tional data flow with no added delay or ground bounce. In the ON state,
the switches can pass signals up to 5V. In the OFF state, the switches offer
very high impedence at the terminals.
The combination of near-zero propagation delay, high OFF impedance,
and over-voltage tolerance makes the QS3VH126 ideal for high perfor-
mance communications applications.
The QS3VH126 is characterized for operation from -40°C to +85°C.
APPLICATIONS:
Hot-swapping
10/100 Base-T, Ethernet LAN switch
Low distortion analog switch
Replaces mechanical relay
ATM 25/155 switching
FUNCTIONAL BLOCK DIAGRAM
1
A
2
A
3
A
4
A
1O E
2O E
3O E
4O E
1
Y
2
Y
3
Y
4
Y
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
c
2004 Integrated Device Technology, Inc.
JANUARY 2004
DSC-5774/11
IDTQS3VH126
2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
V
TERM
(3)
V
TERM
(3)
Description
SupplyVoltage to Ground
DC Switch Voltage V
S
DC Input Voltage V
IN
AC Input Voltage (pulse width
≤20ns)
DC Output Current (max. sink current/pin)
Storage Temperature
Max
–0.5 to +4.6
–0.5 to +5.5
–0.5 to +5.5
–3
120
–65 to +150
Unit
V
V
V
V
mA
°C
NC
1OE
1
A
1
Y
2OE
2
A
2
Y
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CC
4OE
4
A
4
Y
3OE
3
A
3
Y
NC
V
AC
I
OUT
T
STG
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
CC
terminals.
3. All terminals except V
CC
.
QSOP
TOP VIEW
CAPACITANCE
(T
A
= +25°C, F = 1MHz, V
IN
= 0V, V
OUT
= 0V)
Symbol
C
IN
C
I/O
C
I/O
Parameter
(1)
Control Inputs
Quickswitch Channels (Switch OFF)
Quickswitch Channels (Switch ON)
Typ.
3
4
8
Max.
5
6
12
Unit
pF
pF
pF
NOTE:
1. This parameter is guaranteed but not production tested.
1OE
1
A
1
Y
2OE
2
A
2
Y
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
4OE
4
A
4
Y
3OE
3
A
3
Y
PIN DESCRIPTION
Pin Names
1
A
- 4
A
1
Y
- 4
Y
1OE - 4OE
I/O
I/O
I/O
I
Bus A
Bus Y
Output Enable
Description
FUNCTION TABLE
(1)
OE
A
H
L
X
Y
H
L
X
Function
Connect
Connect
Disconnect
H
H
L
SOIC
TOP VIEW
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
2
IDTQS3VH126
2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 3.3V ±0.3V
Symbol
V
IH
V
IL
I
IN
I
OZ
I
OFF
R
ON
Parameter
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current (Control Inputs)
Off-State Current (Hi-Z)
Data Input/Output Power Off Leakage
Switch ON Resistance
for Control Inputs
Guaranteed Logic LOW
for Control Inputs
0V
V
IN
V
CC
0V
V
OUT
5V, Switches OFF
V
IN
or V
OUT
0V to 5V, V
CC
= 0V
V
CC
= 2.3V
Typical at V
CC
= 2.5V
V
CC
= 3V
V
IN
= 0V
V
IN
= 1.7V
V
IN
= 0V
V
IN
= 2.4V
NOTE:
1. Typical values are at V
CC
= 3.3V and T
A
= 25°C.
Test Conditions
Guaranteed Logic HIGH
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
Min.
1.7
2
I
ON
= 30mA
I
ON
= 15mA
I
ON
= 30mA
I
ON
= 15mA
Typ.
(1)
Max.
6
7
4
5
0.7
0.8
±1
±1
±1
8
9
6
8
Unit
V
V
µA
µA
µA
Ω
TYPICAL ON RESISTANCE vs V
IN
AT V
CC
= 3.3V
16
14
R
ON
12
(ohms)
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
IN
(Volts)
3
IDTQS3VH126
2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
I
CCQ
ΔI
CC
I
CCD
Parameter
Quiescent Power Supply Current
Power Supply Current
(2,3)
per Input HIGH
Dynamic Power Supply Current
(4)
Test Conditions
(1)
V
CC
= Max., V
IN
= GND or V
CC
, f = 0
V
CC
= Max., V
IN
= 3V, f = 0 per Control Input
V
CC
= 3.3V, A and Y Pins Open, Control Inputs
Toggling @ 50% Duty Cycle
Min.
Typ.
1
Max.
3
30
Unit
mA
µA
See Typical I
CCD
vs Enable Frequency graph below
NOTES:
1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics.
2. Per input driven at the specified level. A and Y pins do not contribute to
ΔIcc.
3. This parameter is guaranteed but not tested.
4. This parameter represents the current required to switch internal capacitance at the specified frequency. The A and Y inputs do not contribute to the Dynamic Power Supply
Current. This parameter is guaranteed but not production tested.
TYPICAL I
CCD
vs ENABLE FREQUENCY CURVE AT V
CC
= 3.3V
6
4
I
CCD
(mA)
2
0
0
2
4
6
8
10
12
14
16
18
20
ENABLE FREQUENCY (MHz)
4
IDTQS3VH126
2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
T
A
= -40°C to +85°C
V
CC
= 2.5 ± 0.2V
(1)
Symbol
t
PLH
t
PHL
t
PZL
t
PZH
t
PLZ
t
PHZ
f
xOE
Parameter
Data Propagation Delay
(2,3)
A to Y
Switch Turn-On Delay
xOE to xA/xY
Switch Turn-Off Delay
xOE to xA/xY
Operating Frequency -Enable
(2,5)
Min
.
(4)
V
CC
= 3.3 ± 0.3V
(1)
Min
.
(4)
Max.
0.2
8
7
10
Max.
0.2
6.5
7
20
Unit
ns
ns
ns
MHz
1.5
1.5
1.5
1.5
NOTES:
1. See Test Conditions under TEST CIRCUITS AND WAVEFORMS.
2. This parameter is guaranteed but not production tested.
3. The bus switch contributes no propagation delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone
is of the order of 0.2ns at C
L
= 50pF. Since this time constant is much smaller than the rise and fall times of typical driving signals, it adds very little propagation delay to the
system. Propagation delay of the bus switch, when used in a system, is determined by the driving circuit on the driving side of the switch and its interaction with the load on
the driven side.
4. Minimums are guaranteed but not production tested.
5. Maximum toggle frequency for xOE control input (pass voltage > V
CC
, V
IN
= 5V, R
LOAD
1MΩ, no C
LOAD
).
5
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参数对比
与IDTQS3VH126Q8相近的元器件有:PTN2512E2290BSW0。描述及对比如下:
型号 IDTQS3VH126Q8 PTN2512E2290BSW0
描述 Bus Driver, CB3Q/3VH/3C/2B Series, 4-Func, 1-Bit, True Output, PDSO16, QSOP-16 Fixed Resistor, Thin Film, 2W, 229ohm, 200V, 0.1% +/-Tol, 25ppm/Cel, Surface Mount, 2512, CHIP
是否Rohs认证 不符合 符合
包装说明 SSOP, CHIP
Reach Compliance Code compliant compliant
JESD-609代码 e0 e3
端子数量 16 2
最高工作温度 85 °C 155 °C
最低工作温度 -40 °C -55 °C
封装形式 SMALL OUTLINE, SHRINK PITCH SMT
表面贴装 YES YES
端子面层 TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier
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