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IKD06N60RAATMA1

IGBT 600V 12A TO252-3

器件类别:半导体    分立半导体   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
IGBT 类型
沟槽型场截止
电压 - 集射极击穿(最大值)
600V
电流 - 集电极(Ic)(最大值)
12A
脉冲电流 - 集电极 (Icm)
18A
不同 Vge,Ic 时的 Vce(on)
2.1V @ 15V,6A
功率 - 最大值
100W
开关能量
110µJ(开),220µJ(关)
输入类型
标准
栅极电荷
48nC
25°C 时 Td(开/关)值
12ns/127ns
测试条件
400V,6A,23 欧姆,15V
反向恢复时间(trr)
68ns
工作温度
-40°C ~ 175°C(TJ)
安装类型
表面贴装
封装/外壳
TO-252-3,DPak(2 引线 + 接片),SC-63
供应商器件封装
PG-TO252-3
文档预览
IGBT
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD06N60RA
600VTRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
Datasheet
IndustrialPowerControl
IKD06N60RA
TRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

Features:
TRENCHSTOP
TM
ReverseConducting(RC)technologyfor600V
applicationsoffering
•OptimisedV
CEsat
andV
F
forlowconductionlosses
•SmoothswitchingperformanceleadingtolowEMIlevels
•Verytightparameterdistribution
•Operatingrangeof1to20kHz
•Maximumjunctiontemperature175°C
•Shortcircuitcapabilityof5µs
•Bestinclasscurrentversuspackagesizeperformance
•QualifiedaccordingtoAECQ101
•Pb-freeleadplating;RoHScompliant(forPG-TO252:solder
temperature260°C,MSL1)
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•HIDlighting
•Piezoinjection
G
E
C
G
E
C
KeyPerformanceandPackageParameters
Type
IKD06N60RA
V
CE
600V
I
C
6A
V
CEsat
,T
vj
=25°C
1.65V
T
vjmax
175°C
Marking
K06R60A
Package
PG-TO252-3
2
Rev.2.1,2012-10-25
IKD06N60RA
TRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.2.1,2012-10-25
IKD06N60RA
TRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
Maximumratings
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
TurnoffsafeoperatingareaV
CE
≤600V,T
vj
≤175°C
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
Short circuit withstand time
V
GE
=15.0V,V
CC
≤400V
Allowed number of short circuits < 1000
Time between short circuits:
1.0s
T
vj
=150°C
PowerdissipationT
C
=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
1)
junction - case
Diode thermal resistance,
2)
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Symbol Conditions
Max.Value
Unit
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
Value
600
12.0
6.0
18.0
18.0
12.0
6.0
18.0
±20
Unit
V
A
A
A
A
A
V
t
SC
5
P
tot
T
vj
T
stg
100.0
-40...+175
-55...+175
260
µs
W
°C
°C
°C
R
th(j
-
c)
R
th(j
-
c)
R
th(j
-
a)
R
th(j
-
a)
1.50
3.60
75
50
K/W
K/W
K/W
K/W
1)
2)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
4
Rev.2.1,2012-10-25
IKD06N60RA
TRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=6.0A
T
vj
=25°C
T
vj
=175°C
V
GE
=0V,I
F
=6.0A
T
vj
=25°C
T
vj
=175°C
I
C
=0.11mA,V
CE
=V
GE
V
CE
=600V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=6.0A
600
-
-
-
-
4.3
-
-
-
-
-
1.65
1.85
1.70
1.70
5.0
-
-
-
3.4
none
-
2.10
-
2.10
-
5.7
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
F
V
GE(th)
I
CES
I
GES
g
fs
r
G
V
V
40.0 µA
1000.0
100
-
nA
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
ies
C
oes
C
res
Q
G
V
CC
=480V,I
C
=6.0A,
V
GE
=15V
V
GE
=15.0V,V
CC
≤400V,
t
SC
≤5µs
T
vj
=25°C
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
46
470
24
14
48.0
-
-
-
-
-
nC
A
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
Short circuit collector current
Max. 1000 short circuits
I
C(SC)
Time between short circuits:
1.0s
SwitchingCharacteristic,InductiveLoad,atT
vj
=25°C
Parameter
IGBTCharacteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=25°C,
V
CC
=400V,I
C
=6.0A,
V
GE
=0.0/15.0V,
r
G
=23.0Ω,Lσ=60nH,
Cσ=40pF
Lσ,CσfromFig.E
-
-
-
-
-
-
-
12
7
127
152
0.11
0.22
0.33
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
5
Rev.2.1,2012-10-25
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参数对比
与IKD06N60RAATMA1相近的元器件有:IKD06N60RAATMA2、IKD06N60RATMA1。描述及对比如下:
型号 IKD06N60RAATMA1 IKD06N60RAATMA2 IKD06N60RATMA1
描述 IGBT 600V 12A TO252-3 IGBT Transistors IGBT PRODUCTS IGBT Transistors IGBT w/ INTG DIODE 600V 12A
是否Rohs认证 - 符合 符合
厂商名称 - Infineon(英飞凌) Infineon(英飞凌)
包装说明 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code - compliant not_compliant
ECCN代码 - EAR99 EAR99
外壳连接 - COLLECTOR COLLECTOR
最大集电极电流 (IC) - 12 A 12 A
集电极-发射极最大电压 - 600 V 600 V
配置 - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JEDEC-95代码 - TO-252 TO-252
JESD-30 代码 - R-PSSO-G2 R-PSSO-G2
元件数量 - 1 1
端子数量 - 2 2
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED
极性/信道类型 - N-CHANNEL N-CHANNEL
表面贴装 - YES YES
端子形式 - GULL WING GULL WING
端子位置 - SINGLE SINGLE
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED
晶体管应用 - GENERAL PURPOSE POWER CONTROL
晶体管元件材料 - SILICON SILICON
标称断开时间 (toff) - 335 ns 335 ns
标称接通时间 (ton) - 22 ns 22 ns
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