A series of ultra miniature hermetically sealed relays constructed in a transistor style case, providing superior performance and established reliability
characteristics. Available in a variety of sensitivities contact configurations and hybrid versions, to provide a most versatile element to the circuit designer.
The following construction features ensure the highest reliability in extreme environments:
-
All welded relay construction
-
Cleaning and sealing techniques ensures maximum internal cleanliness
-
Low level to 1 ampere switching
-
2 form C, DPDT contacts, special metal alloy with gold plating
-
Frame design and force / mass ratio provides exceptional shock and vibration immunity
Low intercontact capacitance and contact circuit losses, provides also a reliable switching functions in demanding RF applications, combined with small
size and low coil power dissipation (see figure 1).
Series Types
-
-
-
-
IMS*
IMS*D
(note 1)
Basic Relay, 2 form C, DPDT
Basic Relay combined with an internal diode for coil
transient suppression
IMS*DD
Basic Relay incorporates two internal diodes for coil
transient suppression and polarity reversal protection
IMS*T
Basic Relay incorporating an internal transistor driver
and diode for coil transient suppression
MIL-PRF-39016/11, 16 & 21
MIL-PRF-28776/3
Environmental and Physical Specifications
Temperature (Ambient)
Shock
Vibration (sinusoidal)
Vibration (random)
Acceleration
Sealing
Weight
- 65°C to + 125°C
75 g, 6 ms.
30 g, 10 to 3000 Hz
0,4 g² / Hz, 50 to 2000 Hz
50 g
All welded, Hermetic
0,15 oz. (4,25 grams) max.
Electrical Characteristics
(over the Temperature range. Unless otherwise noted)
Coil Data
Contact Rating
(Note: All ratings with grounded
case)
See Typical Characteristics chart
Type Load
Contact Load
Cycles min.
Low Level
1.000.000
10 to 50
A
/ 10 to 50 mV
Resistive
100.000
1 A / 28 Vdc
100.000
250 mA / 115Vac, 60 and 400 Hz (Case not grounded)
100.000
100 mA / 115 Vac, 60 and 400 Hz
Resistive overload
100
2 A / 28 Vdc
Inductive
100.000
200 mA / 28 Vdc (320 mH)
Lamp
100.000
100 mA / 28 Vdc
0,1
max. initial, 0,2
max. after life
4,0 ms. max.
2,0 ms. max. Series: IMS*
7,5 ms. max. Series: IMS*D, IMS*DD, IMS*T
1,5 ms. max.
2,0 ms. max.
500 Vrms min., 60 Hz, all points at sea level
125 Vrms min., 60 Hz, all points at 70.000 ft.
10.000 M min. all points at 500 Vdc
0,7 pF typical
60 mW at pick-up, 250 mW at nominal rated coil voltage, at 25 °C
100 Vdc min. Series: IMS*D, IMS*DD, IMS*T
1,0 Vdc max. Series: IMS*D, IMS*DD, IMS*T
Emitter-Base Voltage (Vebo)
6,0 Vdc min.
70 Vdc min.
Collector-Base Breakdown Voltage (Vcbo) (Ic = 10
A)
Base Turn-Off Voltage
0,3 Vdc max.
50
40
30
20
10
1,0
0,8
0,6
0,4
0,2
0,01
High Generation S.r.l.
Tel: + 39 06 96873136
Fax: + 39 06 94443060
Contact Resistance
Operate Time
Release Time
Contact Bounce
Contact Stabilisation Time
Dielectric Strength
Insulation Resistance
Intercontact Capacitance
Sensitivity
Diode P.I.V.
Negative Coil Transient
Transistor Characteristics
at 25 °C
(Series IMS*T)
Figure 1 – Radio Frequency Curves
C
A – Insertion loss
B – Return loss (VSWR)
C – Isolation across contacts
1,3
1,2
VSWR
Note:
Radio frequency curves are typical
characteristics based on factory
knowledge.
Tests
to
ensure
compliance on RF performance, are
not performed.
dB
B
A
0,05
0,01
0,5
1,0
2,0
1,1
0
FREQUENCY (GHz)
3
REV. 0/2012
TO-5 CASE RELAY
SENSITIVE DPDT
Basic
Suppression
Suppression/Steering
Transistor Driven
Typical Characteristics
(over the Temperature range. Unless otherwise noted)
