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IN74HCT573AN

Octal 3-State Noninverting Transparent Latch High-Performance Silicon-Gate CMOS

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TECHNICAL DATA
IN74HCT573A
Octal 3-State Noninverting
Transparent Latch
High-Performance Silicon-Gate CMOS
The IN74HCT573A is identical in pinout to the LS/ALS573. This
device may be used as a level converter for interfacing TTL or NMOS
outputs to High-Speed CMOS inputs.
These latches appear transparent to data (i.e., the outputs change
asynchronously) when Latch Enable is high. When Latch Enable goes
low, data meeting the setup and hold time becomes latched.
The Output Enable input does not affect the state of the latches, but
when Output Enable is high, all device outputs are forced to the high-
impedance state. Thus, data may be latched even when the outputs are
not enabled.
TTL/NMOS-Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0
µA
ORDERING INFORMATION
IN74HCT573AN Plastic
IN74HCT573ADW SOIC
T
A
= -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Inputs
PIN 20=V
CC
PIN 10 = GND
Output
Enable
L
L
L
H
Latch
Enable
H
H
L
X
D
H
L
X
X
Output
Q
H
L
no change
Z
X = don’t care
Z = high impedance
408
IN74HCT573A
MAXIMUM RATINGS
*
Symbol
V
CC
V
IN
V
OUT
I
IN
I
OUT
I
CC
P
D
Tstg
T
L
*
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
CC
and GND Pins
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
Value
-0.5 to +7.0
-1.5 to V
CC
+1.5
-0.5 to V
CC
+0.5
±20
±35
±75
750
500
-65 to +150
260
Unit
V
V
V
mA
mA
mA
mW
°C
°C
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
, V
OUT
T
A
t
r
, t
f
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time (Figure 1)
Min
4.5
0
-55
0
Max
5.5
V
CC
+125
500
Unit
V
V
°C
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND≤(V
IN
or V
OUT
)≤V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
409
IN74HCT573A
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Symbol
Parameter
Test Conditions
V
Guaranteed Limit
25
°C
to
-55°C
2.0
2.0
0.8
0.8
4.4
5.4
3.98
0.1
0.1
0.26
±0.1
±0.5
≤85
°C
2.0
2.0
0.8
0.8
4.4
5.4
3.84
0.1
0.1
0.33
±1.0
±5.0
≤125
°C
2.0
2.0
0.8
0.8
4.4
5.4
3.7
0.1
0.1
0.4
±1.0
±10
µA
µA
V
Unit
V
IH
V
IL
V
OH
Minimum High-Level
Input Voltage
Maximum Low -
Level Input Voltage
Minimum High-Level
Output Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
≤
20
µA
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
 ≤
20
µA
V
IN
=V
IH
or V
IL
I
OUT
 ≤
20
µA
V
IN
=V
IH
or V
IL
I
OUT
 ≤
6.0 mA
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
4.5
5.5
5.5
V
V
V
V
OL
Maximum Low-Level
Output Voltage
V
IN
= V
IL
or V
IH
I
OUT
 ≤
20
µA
V
IN
= V
IL
or V
IH
I
OUT
 ≤
6.0 mA
I
IN
I
OZ
Maximum Input
Leakage Current
Maximum Three
State Leakage
Current
Maximum Quiescent
Supply Current
(per Package)
Additional Quiescent
Supply Current
V
IN
=V
CC
or GND
Output in High-Impedance
State
V
IN
=V
IH
or V
IL
V
OUT
=V
CC
or GND
V
IN
=V
CC
or GND
I
OUT
=0µA
V
IN
=2.4 V, Any One Input
V
IN
=V
CC
or GND,
Other Inputs
I
OUT
=0µA
I
CC
5.5
4.0
40
160
µA
∆I
CC
≥-55°C
25°C to
125°C
2.4
mA
5.5
2.9
410
IN74HCT573A
AC ELECTRICAL CHARACTERISTICS
(V
CC
=5.0 V
±
10%, C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Guaranteed Limit
Symbol
Parameter
25
°C
to
-55°C
30
30
28
28
12
10
15
≤85°C
≤125°C
Unit
t
PLH
, t
PHL
t
PLH
, t
PHL
t
PLZ
, t
PHZ
t
PZH
, t
PZL
t
TLH
, t
THL
C
IN
C
OUT
Maximum Propagation Delay, Input D to Q
(Figures 1 and 5)
Maximum Propagation Delay,Latch Enable
to Q (Figures 2 and 5)
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
Maximum Output Transition Time, Any Output
(Figures 1 and 5)
Maximum Input Capacitance
Maximum Three-State Output Capacitance
(Output in High-Impedance State)
Power Dissipation Capacitance (Per Enabled
Output)
38
38
35
35
15
10
15
45
45
42
42
18
10
15
ns
ns
ns
ns
ns
pF
pF
Typical @25°C,V
CC
=5.0 V
48
pF
C
PD
Used to determine the no-load dynamic power
consumption:
P
D
=C
PD
V
CC2
f+I
CC
V
CC
TIMING REQUIREMENTS
(V
CC
=5.0 V
±
10%, C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Guaranteed Limit
Symbol
t
SU
Parameter
Minimum Setup Time, Input D
to Latch Enable
(Figure 4)
Minimum Hold Time, Latch
Enable to Input D
(Figure 4)
Minimum Pulse Width, Latch
Enable (Figure 2)
Maximum Input Rise and Fall
Times (Figure 1)
25
°C
to
-55°C
10
≤85°C
13
≤125°C
15
Unit
ns
t
h
5
5
5
ns
t
w
t
r,
t
f
15
500
19
500
22
500
ns
ns
411
IN74HCT573A
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
Figure 3. Switching Waveforms
Figure 4. Switching Waveforms
EXPANDED LOGIC DIAGRAM
Figure 5. Test Circuit
Figure 6. Test Circuit
412
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参数对比
与IN74HCT573AN相近的元器件有:IN74HCT573A、IN74HCT573ADW。描述及对比如下:
型号 IN74HCT573AN IN74HCT573A IN74HCT573ADW
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