MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
600VCoolMOS™C7PowerTransistor
IPP60R120C7
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
600VCoolMOS™C7PowerTransistor
IPP60R120C7
1Description
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithR
DS(on)
*Abelow1Ohm*mm².
TO-220
tab
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMR
DS(on)
*E
oss
andR
DS(on)
*Q
g
•BestinclassR
DS(on)
/package
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto
lowEossandQg
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
I
D,pulse
E
oss
@400V
Body diode di/dt
Type/OrderingCode
IPP60R120C7
Value
650
120
34
66
4
360
Package
PG-TO 220
Unit
V
mΩ
nC
A
A
µJ
A/µs
Marking
60C7120
RelatedLinks
see Appendix A
I
D,continuous
@ T
j
<150°C 31
Final Data Sheet
2
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R120C7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R120C7
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Mounting torque
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
Maximum diode commutation speed
Insulation withstand voltage
Symbol
I
D
I
D,pulse
E
AS
E
AR
I
AS
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
-
I
S
I
S,pulse
dv/dt
di
f
/dt
V
ISO
Values
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-55
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
19
12
66
78
0.39
4.4
120
20
30
92
150
150
60
19
66
20
360
n.a.
Unit
A
A
mJ
mJ
A
V/ns
V
V
W
°C
°C
A
A
V/ns
A/µs
V
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=4.4A; V
DD
=50V; see table 10
I
D
=4.4A; V
DD
=50V; see table 10
-
V
DS
=0...400V
static;
AC (f>1 Hz)
T
C
=25°C
-
-
T
C
=25°C
T
C
=25°C
V
DS
=0...400V,I
SD
<=6.7A,T
j
=25°C
see table 8
V
DS
=0...400V,I
SD
<=6.7A,T
j
=25°C
see table 8
V
rms
,T
C
=25°C,t=1min
Ncm M3 and M3.5 screws
1)
2)
Limited by T
j max
.
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch
Final Data Sheet
4
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R120C7
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.357
62
-
260
Unit
Note/TestCondition
°C/W -
°C/W leaded
°C/W n.a.
°C
1.6mm (0.063 in.) from case for 10s
Thermal resistance, junction - ambient
R
thJA
Thermal resistance, junction - ambient
R
thJA
for SMD version
Soldering temperature, wavesoldering
only allowed at leads
T
sold
Final Data Sheet
5
Rev.2.0,2015-11-30
微控制器 MCU
