MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
650VCoolMOS™C7PowerTransistor
IPA65R065C7
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
650VCoolMOS™C7PowerTransistor
IPA65R065C7
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
TO-220FP
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMR
DS(on)
*E
oss
andR
DS(on)
*Q
g
•BestinclassR
DS(on)
/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
I
D,pulse
E
oss
@400V
Body diode di/dt
Type/OrderingCode
IPA65R065C7
Value
700
65
64
145
8
60
Package
PG-TO 220 FullPAK
Unit
V
mΩ
nC
A
µJ
A/µs
Marking
65C7065
RelatedLinks
see Appendix A
Final Data Sheet
2
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPA65R065C7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPA65R065C7
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Mounting torque
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
Maximum diode commutation speed
Insulation withstand voltage
Symbol
I
D
I
D,pulse
E
AS
E
AR
I
AS
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
-
I
S
I
S,pulse
dv/dt
di
f
/dt
V
ISO
Values
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-55
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
15
9
145
171
0.85
10.2
100
20
30
34
150
150
50
15
145
1.5
60
2500
Unit
A
A
mJ
mJ
A
V/ns
V
V
W
°C
°C
A
A
V/ns
A/µs
V
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=10.2A; V
DD
=50V; see table 10
I
D
=10.2A; V
DD
=50V; see table 10
-
V
DS
=0...400V
static;
AC (f>1 Hz)
T
C
=25°C
-
-
T
C
=25°C
T
C
=25°C
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
see table 8
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
see table 8
V
rms
,T
C
=25°C,t=1min
Ncm M2.5 screws
Limited by T
j max
.
Pulse width t
p
limited by T
j,max
3)
IdenticallowsideandhighsideswitchwithidenticalR
G
2)
1)
Final Data Sheet
4
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPA65R065C7
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient
for SMD version
Soldering temperature, wavesoldering
only allowed at leads
Symbol
R
thJC
R
thJA
R
thJA
T
sold
Values
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
3.68
80
-
260
Unit
Note/TestCondition
°C/W -
°C/W leaded
°C/W n.a.
°C
1.6mm (0.063 in.) from case for
10s
Final Data Sheet
5
Rev.2.0,2013-10-11
