IPD50R650CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
DPAK
tab
1
2
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
I
D
Q
g,typ
I
D,pulse
E
oss
@ 400V
Type/OrderingCode
IPD50R650CE
Value
550
0.65
9
15
19
1.69
Package
PG-TO 252
Unit
V
Ω
A
nC
A
µJ
Marking
50S650CE
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R650CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R650CE
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation (non FullPAK)
TO-252
Operating and storage temperature
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
Maximum diode commutation speed
3)
Symbol
I
D
I
D,pulse
E
AS
E
AR
I
AR
dv/dt
V
GS
P
tot
T
j
,T
stg
I
S
I
S,pulse
dv/dt
di
f
/dt
Values
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
9
5.7
19
102
0.15
2.3
50
20
30
69
150
6.4
19.0
15
500
Unit
A
A
mJ
mJ
A
V/ns
V
W
°C
A
A
V/ns
A/µs
Note/TestCondition
T
C
= 25°C
T
C
= 100°C
T
C
=25°C
I
D
=2.3A; V
DD
= 50V
I
D
=2.3A; V
DD
= 50V
-
V
DS
=0...400V
static;
AC (f>1 Hz)
T
C
=25°C
-
T
C
=25°C
T
C
= 25°C
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C,
t
cond
<2µs
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C,
t
cond
<2µs
2Thermalcharacteristics
Table3ThermalcharacteristicsDPAK
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
-
-
-
Typ.
-
-
35
Max.
1.81
62
-
Unit
Note/TestCondition
°C/W -
SMD version, device on PCB,
minimal footprint
°C/W
SMD version, device on PCB, 6cm
2
cooling area
4)
°C
reflow MSL 1
Thermal resistance, junction - ambient
4)
R
thJA
Soldering temperature, wave- &
reflowsoldering allowed
T
sold
-
-
260
1)
2)
Limited by T
j max
. Maximum duty cycle D=0.5
Pulse width t
p
limited by T
j,max
3)
V
DClink
=400V;V
DS,peak
<V
(BR)DSS
;identicallowsideandhighsideswitchwithidenticalR
G
4)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm
2
copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
3
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R650CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
Symbol
V
(BR)DSS
V
(GS)th
I
DSS
I
GSS
R
DS(on)
R
G
Values
Min.
500
2.50
-
-
-
-
-
-
Typ.
-
3
-
10
-
0.59
1.54
3
Max.
-
3.50
1
-
100
0.65
-
-
Unit
V
V
µA
nA
Ω
Ω
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=0.15mA
V
DS
=500V,V
GS
=0V,T
j
=25°C
V
DS
=500V,V
GS
=0V,T
j
=150°C
V
GS
=20V,V
DS
=0V
V
GS
=13V,I
D
=1.8A,T
j
=25°C
V
GS
=13V,I
D
=1.8A,T
j
=150°C
f=1MHz,opendrain
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Effective output capacitance, energy
related
1)
Effective output capacitance, time
related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
-
Typ.
342
26
21
80
6
5
27
13
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=100V,f=1MHz
V
GS
=0V,V
DS
=100V,f=1MHz
V
GS
=0V,V
DS
=0...400V
I
D
=constant,V
GS
=0V,V
DS
=0...400V
V
DD
=400V,V
GS
=13V,I
D
=2.3A,
R
G
=5.3Ω
V
DD
=400V,V
GS
=13V,I
D
=2.3A,
R
G
=5.3Ω
V
DD
=400V,V
GS
=13V,I
D
=2.3A,
R
G
=5.3Ω
V
DD
=400V,V
GS
=13V,I
D
=2.3A,
R
G
=5.3Ω
Table6Gatechargecharacteristics
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
Q
gs
Q
gd
Q
g
V
plateau
Values
Min.
-
-
-
-
Typ.
1.8
8.1
15
5.3
Max.
-
-
-
-
Unit
nC
nC
nC
V
Note/TestCondition
V
DD
=400V,I
D
=2.3A,V
GS
=0to10V
V
DD
=400V,I
D
=2.3A,V
GS
=0to10V
V
DD
=400V,I
D
=2.3A,V
GS
=0to10V
V
DD
=400V,I
D
=2.3A,V
GS
=0to10V
1)
2)
C
o(er)
isafixedcapacitancethatgivesthesamestoredenergyasC
oss
whileV
DS
isrisingfrom0to80%V
(BR)DSS
C
o(tr)
isafixedcapacitancethatgivesthesamechargingtimeasC
oss
whileV
DS
isrisingfrom0to80%V
(BR)DSS
Final Data Sheet
4
Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R650CE
Table7Reversediodecharacteristics
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol
V
SD
t
rr
Q
rr
I
rrm
Values
Min.
-
-
-
-
Typ.
0.84
162
1
11.1
Max.
-
-
-
-
Unit
V
ns
µC
A
Note/TestCondition
V
GS
=0V,I
F
=2.3A,T
f
=25°C
V
R
=400V,I
F
=2.3A,di
F
/dt=100A/µs
V
R
=400V,I
F
=2.3A,di
F
/dt=100A/µs
V
R
=400V,I
F
=2.3A,di
F
/dt=100A/µs
Final Data Sheet
5
Rev.2.3,2016-06-13
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