IPD90N06S4-07
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
I
D
60
6.9
90
PG-TO252-3-11
V
mΩ
A
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Ultra Low R
DSon
Type
IPD90N04S6-07
Package
PG-TO252-3-11
Marking
4N0607
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
1)
Avalanche energy, single pulse
1)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25°C
I
D
=45A
-
-
T
C
=25°C
-
-
Value
90
63
360
67
90
±20
79
-55 ... +175
55/175/56
mJ
A
V
W
°C
−
Unit
A
Rev. 1.0
page 1
2009-03-24
IPD90N06S4-07
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
1)
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
-
minimal footprint
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=40µA
V
DS
=60V,
V
GS
=0V,
T
j
=25°C
V
DS
=60V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=90A
60
2.0
-
-
3.0
0.01
-
4.0
1
µA
V
-
-
-
-
-
-
1.9
62
40
K/W
-
-
-
5
-
5.7
100
100
6.9
nA
mΩ
Rev. 1.0
page 2
2009-03-24
IPD90N06S4-07
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
1)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
1)
Diode pulse current
1)
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25°C
V
GS
=0V,
I
F
=90A,
T
j
=25°C
V
R
=30V,
I
F
=90A,
di
F
/dt =100A/µs
-
-
0.6
-
-
0.95
90
360
1.3
V
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=48V,
I
D
=90A,
V
GS
=0 to 10V
-
-
-
-
21
5.5
43
6.0
27
11
56
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30V,
V
GS
=10V,
I
D
=90A,
R
G
=3.5Ω
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
3460
850
35
15
3
23
5
4500
1105
70
-
-
-
-
ns
pF
Reverse recovery time
1)
t
rr
-
39
-
ns
Reverse recovery charge
1)
Q
rr
-
38
-
nC
1)
2)
Specified by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24
IPD90N06S4-07
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V
90
80
70
60
100
80
60
P
tot
[W]
40
30
20
10
0
0
50
100
150
200
I
D
[A]
40
20
0
0
50
100
150
200
50
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10
0
100
10 µs
0.5
0.1
Z
thJC
[K/W]
I
D
[A]
100 µs
10
-1
0.05
0.01
10
10
-2
1 ms
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2009-03-24
IPD90N06S4-07
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
360
320
280
240
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
20
5V
6V
7V
8V
10 V
8V
18
16
14
I
D
[A]
200
160
120
80
7V
R
DS(on)
[mΩ]
12
10
6V
8
5V
40
0
0
1
2
3
4
5
6
6
4
0
90
180
270
10 V
360
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
360
-55 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 90 A;
V
GS
= 10 V
11
320
280
10
9
240
200
160
120
6
80
40
0
2
3
4
5
6
7
8
5
175 °C
25 °C
R
DS(on)
[m
Ω
]
I
D
[A]
8
7
4
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2009-03-24
