IPG16N10S4L-61A
OptiMOS™-T2 Power-Transistor
Product Summary
V
DS
R
DS(on),max3)
I
D
100
61
16
V
mW
A
Features
• Dual N-channel Logic Level - Enhancement mode
PG-TDSON-8-10
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Type
IPG16N10S4L-61A
Package
PG-TDSON-8-10
Marking
4N10L61
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
one channel active
Symbol
Conditions
Value
Unit
I
D
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
1)
16
A
11
Pulsed drain current
1)
one channel active
Avalanche energy, single pulse
1, 3)
Avalanche current, single pulse
3)
Gate source voltage
Power dissipation
one channel active
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
I
D
=8A
-
-
T
C
=25 °C
-
64
33
10
±16
29
-55 ... +175
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30
IPG16N10S4L-61A
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
1, 3)
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
-
minimal footprint
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
3)
V
(BR)DSS
V
GS
=0V,
I
D
=1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=9µA
V
DS
=100V,
V
GS
=0V,
T
j
=25°C
V
DS
=100V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
3)
Drain-source on-state resistance
3)
I
GSS
R
DS(on)
V
GS
=16V,
V
DS
=0V
V
GS
=4.5V,
I
D
=8A
V
GS
=10 V,
I
D
=16 A
100
1.1
-
-
1.6
0.01
-
2.1
1
µA
V
-
-
-
-
100
60
5.2
-
-
K/W
-
-
-
-
1
-
60
47
100
100
78
61
nA
mW
Rev. 1.0
page 2
2014-06-30
IPG16N10S4L-61A
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
1)
Input capacitance
3)
Output capacitance
3)
Reverse transfer capacitance
3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
1, 3)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
1)
one channel active
Diode pulse current
1)
one channel active
Diode forward voltage
I
S
T
C
=25°C
I
S,pulse
V
GS
=0V,
I
F
=16A,
T
j
=25°C
V
R
=50V,
I
F
=I
S
,
di
F
/dt =100A/µs
-
-
64
-
-
16
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=80V,
I
D
=16A,
V
GS
=0 to 10V
-
-
-
-
2.3
1.3
8.5
3.7
3.0
3.6
11
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,
V
GS
=10V,
I
D
=16A,
R
G
=3.5W
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
650
165
12
2
1
5
4
845
215
36
-
-
-
-
ns
pF
V
SD
-
1.0
1.3
V
Reverse recovery time
1)
t
rr
-
50
-
ns
Reverse recovery charge
1, 3)
Q
rr
-
80
-
nC
1)
Specified by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Per channel
Rev. 1.0
page 3
2014-06-30
IPG16N10S4L-61A
1 Power dissipation
P
tot
= f(T
C
);
V
GS
=10 V; one channel active
2 Drain current
I
D
= f(T
C
);
V
GS
= 10 V; one channel active
35
20
30
15
25
P
tot
[W]
20
I
D
[A]
15
10
5
0
0
50
100
150
200
10
5
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25°C;
D
=0; one channel active
parameter:
t
p
100
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
0.5
10 µs
10
10
0
Z
thJC
[K/W]
0.1
0.05
I
D
[A]
100 µs
0.01
1
10
-1
single pulse
1 ms
0.1
0.1
1
10
100
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2014-06-30
IPG16N10S4L-61A
5 Typ. output characteristics
5)
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
64
10 V
6 Typ. drain-source on-state resistance
5)
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
160
3.5 V
4V
4.5 V
5V
56
140
48
5V
120
40
32
R
DS(on)
[mW]
I
D
[A]
4.5 V
100
24
4V
80
16
3.5 V
60
10 V
8
0
0
1
2
3
4
5
40
0
16
32
48
64
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
5)
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
64
-55 °C
25 °C
8 Typ. drain-source on-state resistance
5)
R
DS(on)
= f(T
j
);
I
D
= 16 A;
V
GS
= 10 V
120
56
100
48
175 °C
40
32
R
DS(on)
[mW]
1
2
3
4
5
6
80
I
D
[A]
24
60
16
40
8
0
20
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2014-06-30
