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™
IPB037N06N3 G
IPI040N06N3 G
IPP040N06N3 G
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3 Power-Transistor
Features
P 6 AB
A C 91C > 4AE5B1>4 43 43 ,& ) ,
? H>3 53 93 9
6 ?
9
P G 5<5>C71C 3 81A G
R
9H"[Z#
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5
75
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P. 5A < F ? > A 9C 5
R
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H?
5BB1>3
P ' 3 81>>5< >? A
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5E5<
P E1< 85 A 54
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P * D 954 13 3 ? A >7 C $
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9
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Product Summary
V
9H
R
, ? >=1G, &
I
9
.(
+&/
1(
J
Y"
6
@A ? D 5>79
5E9 B
>55A>7
9
B
1=@< 3 ? 45B
5
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?E?(,cC(.C
?E7(,cC(.C
6 AC 75C1@@<3 1C >B
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9 9
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P) 2 655 @< 9 + ? " , 3 ? =@<1>C
A
1C
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9
P" 1< 75> 655 13 3 ? A >7 C #
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A
49 ?
Type
Package
Marking
E=%ID*.+%+
(+/C(.C
E=%ID*.*%+
(,(C(.C
E=%ID**(%+
(,(C(.C
Maximum ratings,
1C
T
V
S D 5B ? C F95 B 954
>< B 85A B @53 6
9
Parameter
? >C ? D 4A > 3 D A
9
>D B 19 A5>C
Symbol Conditions
I
9
T
8
S
*#
Value
1(
1(
+.(
).-
p*(
Unit
6
T
8
) DB 4A > 3 D A
+#
< 54 19 A5>C
E1< 85 5>5A B>7< @DB
1>3
7H 9 5 < 5
!1C B D 3 5 E? <175
5 ? A
C
) ? F5A49B@1C >
B9 9
?
( @5A 9 1>4 B? A
1C
>7
C 175 C
5=@5A D 5
1C A
# 3 <=1C 3 1C A #' #
9 9
3
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I
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V
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T
8
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I
9
R
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J
K
S
T
8
S
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D A 9 <=9 2 H 2 ? >4F95 F9 1>R
_T@8
% / C 3 89 9 12 < C 3 1AH
A5>C B 9 C
54
A
C
8
85
@ B 5 ?
A
+ F9 3 =
*
? >5 <
C
8
1H5A
V = C 3 ; 3 ? @@5A1A 6 A4A >
89
51 ?
19
, 55 6
SD
5
9 A
5E95 ? >
== G
== G
== 5@? G )
3
H
3 ? >>53 C >
) 9 E5A91<9 B9 19
9
?
B C
3
> C< A
<
@175
IPB037N06N3 G
IPI040N06N3 G
IPP040N06N3 G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
-85A
=1<A 9C 5 :D C > 3 1B
5BB1>3
>3 9
?
5
-85A
=1<A 9C 5
5BB1>3
:D C > 1=2 9
>3 9
?
5>C
R
_T@8
R
_T@6
=9 =1<6 ? C 9
>9
? @A>C
3 =U 3 ? ? <>7 1A
,#
9
51
%
%
%
%
(&0
,(
A'K
Electrical characteristics,
1C
T
V
S D 5B ? C F95 B 954
>< B 85A B @53 6
9
Static characteristics
A > B D 3 5 2 A
19 ? A
51;4? F> E? <175
C
!1C C 5B < E? <175
5 8A 8? 4
C
V
"7G#9HH
V
=H
I
9
=
V
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V
9H
4V
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I
9
V
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V
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T
V
S
V
9H
V
=H
T
V
S
!1C ? D 3 5 <
5 B A 51;175 3 D A
A5>C
A > B D 3 5 ? > B1C A 9C 5
19 ? A
C 5 5BB1>3
I
=HH
R
9H"[Z#
V
=H
V
9H
V
=H
I
9
V
=H
I
9
"HB9#
!1C A 9C 5
5 5BB1>3
I]MZ^O[ZP`O_MZOQ
R
=
g
R^
fV
9H
f5*fI
9
fR
9H"[Z#YMc
I
9
.(
*
%
+
%
,
J
05A 71C E? <175 4A > 3 D A
?
5
C
19 A5>C
I
9HH
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@175
IPB037N06N3 G
IPI040N06N3 G
IPP040N06N3 G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
#>@D 3 1@13 9 5
C
C
1>3
( D @D 3 1@13 9 5
C C
C
1>3
+ 5E5A 5 C1>B5A3 1@13 9 5
B A 6
C
1>3
-D > ? > 45< C
A
1H 9
=5
+ 95 C
B 9
=5
-D > ? 6 45< C
A 6 1H 9
=5
1< C
<9
=5
!1C 81A 81A C 9C B
5
S5
13 5AB9
-#
3
!1C C B D 3 5 3 81A
5 ? ? A
75
!1C C 4A > 3 81A
5 ? 19
75
, F9 89 3 81A
C >7
3
75
!1C 3 81A C C
5
75 ? 1<
!1C @< 51D E? <175
5 1C
C
( D @D 3 81A
C C
75
Reverse Diode
9 45 3 ? >C D 6 A 4 3 D A
?
9 B ? F1A
>?
A5>C
9 45 @DB 3 D A
?
< 5 A5>C
9 45 6 A 4 E? <175
?
? F1A
C
+ 5E5A 5 A ? E5A C
B 53
H9
=5
+ 5E5A 5 A ? E5A 3 81A
B 53
H
75
-#
C
U^^
C
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C
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t
P"[Z#
t
]
t
P"[RR#
t
R
V
99
V
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I
9
R
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V
=H
V
9H
f
& " I
%
%
%
%
%
%
%
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)/((
-0
+(
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-
))((( \<
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0/
%
%
%
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Z^
Q
S^
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SP
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Q
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V
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99
V
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V
99
I
9
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T
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S
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V
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T
V
S
V
G
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Pi
<
'Pt
%
%
%
%
%
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1(
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)&*
%
%
6
J
Z^
Z8
, 55 67D 5
6 A71C 3 81A @1A
9 A
?
5
75
1=5C 456>9? >
5A 9 C
9
@175
IPB037N06N3 G
IPI040N06N3 G
IPP040N06N3 G
1 Power dissipation
P
_[_
4R"T
8
#
2 Drain current
I
9
4R"T
8
V
=H
"
200
100
160
80
120
60
P
tot
[W]
80
I
D
[A]
40
40
20
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
9
4R"V
9H
T
8
S
D
4(
@1A
1=5C
t
\
5A
10
3
<=9 2 H? > B1C
9 C
54
C5
]Q^U^_MZOQ
VB
4 Max. transient thermal impedance
Z
_T@8
4R"t
\
#
@1A
1=5C
D
4t
\
'T
5A
10
0
(&-
10
2
=B
(&*
Z
thJC
[K/W]
I
D
[A]
98
(&)
10
1
10
-1
(&(-
(&(*
(&()
B>7< @DB
9 5 <5
10
0
10
-1
10
10
0
10
1
10
2
-2
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
@175
IPB037N06N3 G
IPI040N06N3 G
IPP040N06N3 G
5 Typ. output characteristics
I
9
4R"V
9H
T
V
S
@1A
1=5C
V
=H
5A
320
.
.
.
6 Typ. drain-source on resistance
R
9H"[Z#
4R"I
9
T
V
S
@1A
1=5C
V
=H
5A
15
.
.
.
12
240
R
DS(on)
[m ]
.
9
I
D
[A]
160
6
.
.
.
80
3
.
.
.
.
0
0
1
2
3
4
5
0
0
50
100
150
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
9
4R"V
=H
J
9H
f5*fI
9
fR
9H"[Z#YMc
V
@1A
1=5C
T
V
5A
320
8 Typ. forward transconductance
g
R^
4R"I
9
T
V
S
200
160
240
120
160
g
fs
[S]
80
S
S
I
D
[A]
80
40
0
0
2
4
6
0
0
50
100
150
V
GS
[V]
I
D
[A]
@175
NXP MCU
