IPB100N04S2-04
IPP100N04S2-04
OptiMOS
®
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
•
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
40
3.3
100
V
mΩ
A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB100N04S2-04
IPP100N04S2-04
Package
PG-TO263-3-2
PG-TO220-3-1
Ordering Code
SP0002-19061
SP0002-19056
Marking
PN0404
PN0404
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Gate source voltage
4)
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=80A
Value
100
100
400
810
±20
300
-55 ... +175
mJ
V
W
°C
Unit
A
Rev. 1.0
page 1
2006-03-02
IPB100N04S2-04
IPP100N04S2-04
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
minimal footprint
6 cm
2
cooling area
5)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=125 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=80 A,
V
GS
=10 V,
I
D
=80 A,
SMD version
40
2.1
-
3.0
-
4.0
V
-
-
-
-
-
-
-
-
0.5
62
62
40
K/W
Values
typ.
max.
Unit
Zero gate voltage drain current
I
DSS
-
0.01
1
µA
-
-
-
-
1
1
2.8
2.5
100
100
3.6
3.3
nA
mΩ
Rev. 1.0
page 2
2006-03-02
IPB100N04S2-04
IPP100N04S2-04
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
0.9
100
400
1.3
V
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
26
46
125
4.9
37
80
172
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=2.2
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
5300
2200
580
27
46
56
33
-
-
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
2)
t
rr
-
66
80
ns
Reverse recovery charge
2)
1)
Q
rr
-
153
190
nC
Current is limited by bondwire; with an
R
thJC
= 0.5K/W the chip is able to carry 210A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
2)
3)
Defined by design. Not subject to production test.
See diagram 13
Qualified at -20V and +20V.
4)
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-02
IPB100N04S2-04
IPP100N04S2-04
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
4 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
10 V
350
120
300
100
250
80
P
tot
[W]
200
I
D
[A]
0
50
100
150
200
60
150
40
100
20
50
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
1 µs
10 µs
100 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
0
0.5
100
1 ms
10
-1
Z
thJC
[K/W]
0.1
I
D
[A]
0.05
10
10
-2
0.01
1
0.1
1
10
100
10
-3
10
-7
single pulse
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2006-03-02
IPB100N04S2-04
IPP100N04S2-04
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
400
10V
6 Typ. drain-source on-state resistance
R
DS(on)
= (I
D
);
T
j
= 25 °C
parameter:
V
GS
12
5.5V
350
300
250
200
150
100
6.5V
10
8
R
DS(on)
[mΩ]
6.0V
I
D
[A]
6
5.5V
6V
4
6.5V
10V
5.0V
50
0
0
2
4
6
8
10
2
0
0
20
40
60
80
100
120
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
200
180
160
8 Typ. Forward transconductance
g
fs
= f(I
D
);
T
j
= 25°C
parameter:
g
fs
200
150
140
120
100
80
60
50
40
20
0
1
2
3
4
5
6
7
175 °C
25 °C
-55 °C
g
fs
[S]
I
D
[A]
100
0
0
50
100
150
200
V
GS
[V]
I
D
[A]
Rev. 1.0
page 5
2006-03-02
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