IP Semiconductor Co., Ltd.
IPS625 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa echnology;
SIPOS and Glass passivation technology used has reliable
operation up to 125℃ junction temperature. Low Igt parts
available.
Typical applications are in rectification (softstart) and
these products are designed to be used with international
recetifier input diodes, switches and output recetifiers
which are available in identical package outlines.
IPS625-xxA
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/ V
RRM
V
TM
Value
25
600
≤ 1.6
Unit
A
V
V
TO-220A
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS on–state current (Tc = 110℃, 180º conduction half sine wave)
Average on–state current (Tc = 110℃, 180º conduction half sine wave)
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Tj = 25℃
Tj = 25℃
Symbol
I
T(RMS)
I
T(AV)
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
Value
25
16
-40 to +150
-40 to +125
600
600
700
700
250
Unit
A
A
℃
V
V
One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM
applied
I
TSM
One cycle Non Repetitive surge current, 10ms sine pulse, no voltage
applied
I²t Value for fusing, 10ms sine pulse, rated VRRM applied
I²t
I²t Value for fusing, 10ms sine pulse, no voltage applied
Critical rate of rise of turned – on current (I
G
= 2 X I
GT,
Tj = 125℃)
Peak gate current
Average gate power dissipation
dI/dt
I
GM
P
G(AV)
A
260
310
A²s
320
100
4
1
A/us
A
W
t
p = 20us, Tj = 125℃
Tj = 125℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPS625-xxA
ELECTRICAL CHARACTERISTICS (Tj = 25
℃
unless otherwise specified)
Symbol
Test Condition
Required DC gate current to trigger at 25℃
at - 40℃
at 125℃
Required DC voltage to trigger
at 25℃
(anode supply = 6V, resistive load) at - 40℃
at 125℃
DC gate voltage not to trigger
IPS625-xxA
40
40
100
15
1.5
2.5
1.0
0.2
80
60
500
Unit
I
GT
MAX
mA
V
GT
MAX
V
V
GD
I
L
I
H
dV/dt
(
Tj = 125℃, V
DRM
= rated value)
I
G =
1.2 I
GT
Holding current
V
D
= 67% V
DRM
gate open Tj = 125
℃
MAX
MAX
MAX
MIN
V
mA
mA
V/us
STATIC CHARACTERISTICS
Symbol
V
TM
Test Conditions
I
TM
= 50A, tp = 380uS
V
D
= V
DRM
Tj = 25℃
Tj = 25℃
Tj = 125℃
Value
(MAX)
1.6
10
4
Unit
V
uA
mA
I
DRM /
I
RRM
V
R
= V
RRM
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case for DC
TO-220A
Value
1.9
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPS625-xxA
PACKAGE MECHANICAL DATA
TO-220A
Millimeters
Min
A
B
C
C2
C3
D
E
F
G
H
L1
L2
L3
V
1.14
2.65
40º
4.4
0.61
0.46
1.23
2.4
8.6
9.8
6.2
4.8
28
3.75
1.7
2.95
Typ
Max
4.6
0.88
0.70
1.32
2.72
9.7
10.4
6.6
5.4
29.8
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPS625-xxA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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