IPS70R600CE
MOSFET
700VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
IPAKSL
tab
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Applications
Adapter,LCD&PDPTVandIndoorlighting
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
I
d.
I
D,pulse
E
oss
@400V
Type/OrderingCode
IPS70R600CE
Value
750
600
22
10.5
18
2
Package
PG-TO 251
Unit
V
mΩ
nC
A
A
µJ
Marking
70S600CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31
700VCoolMOSªCEPowerTransistor
IPS70R600CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
2016-03-31
700VCoolMOSªCEPowerTransistor
IPS70R600CE
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
Maximum diode commutation speed
Symbol
I
D
I
D,pulse
E
AS
E
AR
I
AR
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
I
S
I
S,pulse
dv/dt
di
f
/dt
Values
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-40
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
10.5
6.6
18
55
0.21
1.3
50
20
30
86
150
150
7.4
18
15
500
Unit
A
A
mJ
mJ
A
V/ns
V
V
W
°C
°C
A
A
V/ns
A/µs
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=1.3A; V
DD
=50V; see table 10
I
D
=1.3A; V
DD
=50V; see table 10
-
V
DS
=0...480V
static;
AC (f>1 Hz)
T
C
=25°C
-
-
T
C
=25°C
T
C
=25°C
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
see table 8
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
see table 8
1)
2)
Limited by T
j max
. Maximum duty cycle D=0.50
Pulse width t
p
limited by T
j,max
3)
IdenticallowsideandhighsideswitchwithidenticalR
G
Final Data Sheet
3
2016-03-31
700VCoolMOSªCEPowerTransistor
IPS70R600CE
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Soldering temperature, wavesoldering
only allowed at leads
Symbol
R
thJC
Values
Min.
-
-
-
Typ.
-
-
-
Max.
1.45
62
260
Unit
Note/TestCondition
°C/W -
°C/W leaded
°C
1.6mm (0.063 in.) from case for 10s
Thermal resistance, junction - ambient
R
thJA
T
sold
Final Data Sheet
4
2016-03-31
700VCoolMOSªCEPowerTransistor
IPS70R600CE
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Symbol
V
(BR)DSS
V
(GS)th
I
DSS
I
GSS
R
DS(on)
R
G
Values
Min.
700
2.5
-
-
-
-
-
-
Typ.
-
3.0
-
10
-
0.54
1.40
10.5
Max.
-
3.5
1
-
100
0.60
-
-
Unit
V
V
µA
nA
Ω
Ω
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=0.21mA
V
DS
=700V,V
GS
=0V,T
j
=25°C
V
DS
=700V,V
GS
=0V,T
j
=150°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=1A,T
j
=25°C
V
GS
=10V,I
D
=1A,T
j
=150°C
f=1MHz,opendrain
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Effective output capacitance,
energy related
1)
Effective output capacitance,
time related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
-
Typ.
474
32
22
90
10
8
64
11
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=100V,f=1MHz
V
GS
=0V,V
DS
=100V,f=1MHz
V
GS
=0V,V
DS
=0...480V
I
D
=constant,V
GS
=0V,V
DS
=0...480V
V
DD
=400V,V
GS
=13V,I
D
=3.2A,
R
G
=6.8Ω;seetable9
V
DD
=400V,V
GS
=13V,I
D
=3.2A,
R
G
=6.8Ω;seetable9
V
DD
=400V,V
GS
=13V,I
D
=3.2A,
R
G
=6.8Ω;seetable9
V
DD
=400V,V
GS
=13V,I
D
=3.2A,
R
G
=6.8Ω;seetable9
Table6Gatechargecharacteristics
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
Q
gs
Q
gd
Q
g
V
plateau
Values
Min.
-
-
-
-
Typ.
2.6
12
22
5.4
Max.
-
-
-
-
Unit
nC
nC
nC
V
Note/TestCondition
V
DD
=480V,I
D
=3.2A,V
GS
=0to10V
V
DD
=480V,I
D
=3.2A,V
GS
=0to10V
V
DD
=480V,I
D
=3.2A,V
GS
=0to10V
V
DD
=480V,I
D
=3.2A,V
GS
=0to10V
1)
2)
C
o(er)
isafixedcapacitancethatgivesthesamestoredenergyasC
oss
whileV
DS
isrisingfrom0to480V
C
o(tr)
isafixedcapacitancethatgivesthesamechargingtimeasC
oss
whileV
DS
isrisingfrom0to480V
Final Data Sheet
5
2016-03-31
电子竞赛
