IP Semiconductor Co., Ltd.
IPS812 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa technology
SIPOS and Glass passivation technology used has
reliable operation up to 125℃ junction temperature.
Low Igt parts available.
IPS812 series are suitable for general purpose
applications, a high gate sensitivity is required.
IPS812-xxB
MAIN FEATURES
Symbol
I
T(RMS)
I
T(AV)
V
DRM
/ V
RRM
V
TM
Value
12
8
800
≤ 1.6
Unit
A
A
V
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS on–state current (Tc = 105℃, 180º conduction half sine wave)
Average on–state current
(Tc = 105℃, 180º conduction half sine wave)
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Tj = 25℃
Tj = 25℃
Symbol
I
T(RMS)
I
T(AV)
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
TSM
I²t
dI/dt
I
GM
P
G(AV)
Value
12
8
-40 to +150
-40 to +110
800
800
900
900
140
98
50
4
1
Unit
A
A
℃
V
V
A
A²s
A/us
A
W
One cycle Non Repetitive surge current ( Half Cycle, 50Hz)
I²t Value for fusing
(t
p = 10ms, Half Cycle)
Critical rate of rise of turned – on current (I
G
= 2 X I
GT,
Tj = 125℃)
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125℃
Tj = 125℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPS812-xxB
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
IPS812-xxB
Symbol
I
GT
V
GT
Test Condition
05
Required DC gate current to trigger
Required DC voltage to trigger
(anode supply = 6V, resistive load)
DC gate voltage not to trigger
MAX
MAX
5
1.3
15
15
Unit
mA
V
V
GD
I
L
I
H
dV/dt
(
Tj = 110℃, V
DRM
= rated value)
I
G =
1.2 I
GT
Holding current
V
D
= 67% V
DRM
gate open Tj = 125
℃
MAX
MAX
MAX
MIN
30
15
40
0.2
60
30
200
V
mA
mA
V/us
STATIC CHARACTERISTICS
Symbol
V
TM
Test Conditions
I
TM
= 24A, tp = 380uS
V
D
= V
DRM
Tj = 25℃
Tj = 25℃
Tj = 125℃
Value
(MAX)
1.6
5
2
Unit
V
uA
mA
I
DRM /
I
RRM
V
R
= V
RRM
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case
TO-220B
Value
2.8
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPS812-xxB
PACKAGE MECHANICAL DATA
TO-220B
Millimeters
Min
A
B
C
C2
C3
D
E
F
G
H
L1
L2
L3
V
1.14
2.65
40º
4.4
0.61
0.46
1.23
2.4
8.6
9.8
6.2
4.8
28
3.75
1.7
2.95
Typ
Max
4.6
0.88
0.70
1.32
2.72
9.7
10.4
6.6
5.4
29.8
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPS812-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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电源技术
