IPSA70R1K4P7S
MOSFET
700VCoolMOSªP7PowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost
sensitiveapplicationsinconsumermarketssuchascharger,adapter,
lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction
MOSFET,combinedwithanexcellentprice/performanceratioandstateof
theartease-of-uselevel.Thetechnologymeetshighestefficiency
standardsandsupportshighpowerdensity,enablingcustomersgoing
towardsveryslimdesigns.
IPAK-shortleadwithISO-Standoff
Features
•ExtremelylowlossesduetoverylowFOMR
DS(on)
*Q
g
andR
DS(on)
*E
oss
•Excellentthermalbehavior
•IntegratedESDprotectiondiode
•Lowswitchinglosses(E
oss
)
•Productvalidationacc.JEDECStandard
Gate
Pin 1
Drain
Pin 2, Tab
Source
Pin 3
Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers,
Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Q
g,typ
I
D,pulse
E
oss
@ 400V
V
(GS)th,typ
ESD class (HBM)
Type/OrderingCode
IPSA70R1K4P7S
Value
700
1.4
4.7
8.2
0.6
3
1C
Package
PG-TO 251
Marking
70S1K4P7
RelatedLinks
see Appendix A
Unit
V
Ω
nC
A
µJ
V
Final Data Sheet
1
Rev.2.1,2018-02-12
700VCoolMOSªP7PowerTransistor
IPSA70R1K4P7S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.1,2018-02-12
700VCoolMOSªP7PowerTransistor
IPSA70R1K4P7S
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Application (Flyback) relevant
avalanche current, single pulse
3)
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
4)
Maximum diode commutation speed
4)
Insulation withstand voltage
Symbol
I
D
I
D,pulse
I
AS
dv/dt
V
GS
P
tot
T
j
,T
stg
I
S
I
S,pulse
dv/dt
di
f
/dt
V
ISO
Values
Min.
-
-
-
-
-
-16
-30
-
-40
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
4.0
2.5
8.2
2.4
100
16
30
22.7
150
2.7
8.2
1
50
n.a.
Unit
A
A
A
V/ns
V
W
°C
A
A
V/ns
V
Note/TestCondition
T
C
= 20°C
T
C
= 100°C
T
C
=25°C
measured with standard leakage
inductance of transformer of 5µH
V
DS
=0...400V
static;
AC (f>1 Hz)
T
C
=25°C
-
T
C
=25°C
T
C
= 25°C
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
V
rms
, T
C
=25°C, t=1min
A/µs
V
DS
=0...400V,I
SD
<=I
S
,T
j
=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction
Symbol
R
thJC
Values
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
5.5
62
-
260
Unit
Note/TestCondition
°C/W -
°C/W leaded
°C/W n.a.
°C
1.6 mm (0.063 in.) from case for 10s
Thermal resistance, junction - ambient
R
thJA
Thermal resistance, junction - ambient
R
thJA
for SMD version
Soldering temperature, wavesoldering
only allowed at leads
T
sold
1)
2)
Limited by T
j max
. T
j
= 20°C. Maximum duty cycle D=0.5
Pulse width t
p
limited by T
j,max
3)
Proven during verification test. For explanation please read AN - CoolMOS
TM
700V P7.
4)
V
DClink
=400V;V
DS,peak
<V
(BR)DSS
;identicallowsideandhighsideswitchwithidenticalR
G
Final Data Sheet
3
Rev.2.1,2018-02-12
700VCoolMOSªP7PowerTransistor
IPSA70R1K4P7S
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Symbol
V
(BR)DSS
V
(GS)th
I
DSS
Values
Min.
700
2.50
-
-
-
-
-
-
Typ.
-
3
-
10
-
1.15
2.62
1.6
Max.
-
3.50
1
-
1
1.40
-
-
Unit
V
V
µA
µA
Ω
Ω
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=0.04mA
V
DS
=700V,V
GS
=0V,T
j
=25°C
V
DS
=700V,V
GS
=0V,T
j
=150°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=0.7A,T
j
=25°C
V
GS
=10V,I
D
=0.7A,T
j
=150°C
f=1MHz,opendrain
Gate-source leakage current incl. Zener
I
GSS
diode
Drain-source on-state resistance
Gate resistance
R
DS(on)
R
G
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Effective output capacitance, energy
related
1)
Effective output capacitance, time
related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
-
Typ.
158
3
9
113
12
4.9
63
61
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=400V,f=250kHz
V
GS
=0V,V
DS
=400V,f=250kHz
V
GS
=0V,V
DS
=0...400V
I
D
=constant,V
GS
=0V,V
DS
=0...400V
V
DD
=400V,V
GS
=13V,I
D
=0.5A,
R
G
=10.2Ω
V
DD
=400V,V
GS
=13V,I
D
=0.5A,
R
G
=10.2Ω
V
DD
=400V,V
GS
=13V,I
D
=0.5A,
R
G
=10.2Ω
V
DD
=400V,V
GS
=13V,I
D
=0.5A,
R
G
=10.2Ω
Table6Gatechargecharacteristics
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
Q
gs
Q
gd
Q
g
V
plateau
Values
Min.
-
-
-
-
Typ.
0.7
1.7
4.7
4.3
Max.
-
-
-
-
Unit
nC
nC
nC
V
Note/TestCondition
V
DD
=400V,I
D
=0.5A,V
GS
=0to10V
V
DD
=400V,I
D
=0.5A,V
GS
=0to10V
V
DD
=400V,I
D
=0.5A,V
GS
=0to10V
V
DD
=400V,I
D
=0.5A,V
GS
=0to10V
1)
2)
C
o(er)
isafixedcapacitancethatgivesthesamestoredenergyasC
oss
whileV
DS
isrisingfrom0to400V
C
o(tr)
isafixedcapacitancethatgivesthesamechargingtimeasC
oss
whileV
DS
isrisingfrom0to400V
Final Data Sheet
4
Rev.2.1,2018-02-12
700VCoolMOSªP7PowerTransistor
IPSA70R1K4P7S
Table7Reversediodecharacteristics
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol
V
SD
t
rr
Q
rr
I
rrm
Values
Min.
-
-
-
-
Typ.
0.9
130
0.4
6
Max.
-
-
-
-
Unit
V
ns
µC
A
Note/TestCondition
V
GS
=0V,I
F
=0.9A,T
j
=25°C
V
R
=400V,I
F
=0.5A,di
F
/dt=50A/µs
V
R
=400V,I
F
=0.5A,di
F
/dt=50A/µs
V
R
=400V,I
F
=0.5A,di
F
/dt=50A/µs
Final Data Sheet
5
Rev.2.1,2018-02-12
微控制器 MCU
