IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT2006-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT2006-xxB series is 3 Quadrants triacs, This is specially
recommended for use on inductive Loads..
IPT2006-xxB
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/ V
RRM
V
TM
Value
20
600
≤ 1.65
Unit
A
V
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
RMS on–state current
(360º conduction angle )
Tj = 25℃
Tj = 25℃
Tc = 70℃
t = 8.3ms
t = 10ms
Symbol
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I²t
Repetitive F = 50Hz
Non repetitive
dI / dt
I
GM
P
G(AV)
Value
-40 to +150
-40 to +125
600
600
700
700
20
210
200
200
20
100
8
1
Unit
℃
V
V
A
A
A²s
A/us
A
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t
p = 10ms
Critical Rate of rise of on-state current
Gate supply : I
G
= 500mA dIG/dt = 1A/us
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125
℃
Tj = 125
℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPT2006-xxB
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
IPT2006-xxB
BE
I
GT
V
GT
V
GD
V
D
= 12V R
L
= 33Ω
Tj = 25
℃
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT,
Tj = 125
℃
I
T =
500mA Gate open
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
MIN
I – II – III
I – II – III
I – II – III
I – III
MAX
II
I
H
dV/dt
MAX
MIN
100
50
400
-
-
-
60
50
250
-
-
18
80
75
500
-
-
11
A/ms
mA
V/us
MAX
MAX
MIN
50
50
CE
35
1.5
0.2
50
70
mA
DE
50
mA
V
V
Symbol
Test Condition
Quadrant
Unit
I
L
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 28A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 25
℃
Tj = 25
℃
Tj = 125
℃
Value (MAX)
1.65
20
3
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
1.3
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPT2006-xxB
PACKAGE MECHANICAL DATA
TO-220B
Millimeters
Min
A
B
C
C2
C3
D
E
F
G
H
L1
L2
L3
V
1.14
2.65
40º
4.4
0.61
0.46
1.23
2.4
8.6
9.8
6.2
4.8
28
3.75
1.7
2.95
Typ
Max
4.6
0.88
0.70
1.32
2.72
9.7
10.4
6.6
5.4
29.8
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPT2006-xxB
IPT2006-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
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