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IR2128PBF

Gate Drivers 1 HI SIDE DRVR INVERTING INPUT

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
DIP, DIP8,.3
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
12 weeks
高边驱动器
YES
接口集成电路类型
BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码
R-PDIP-T8
长度
9.88 mm
功能数量
1
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
标称输出峰值电流
0.5 A
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
15 V
认证状态
Not Qualified
座面最大高度
5.33 mm
最大供电电压
20 V
最小供电电压
10 V
标称供电电压
15 V
电源电压1-最大
620 V
电源电压1-分钟
7 V
表面贴装
NO
技术
CMOS
温度等级
AUTOMOTIVE
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
断开时间
0.2 µs
接通时间
0.25 µs
宽度
7.62 mm
Base Number Matches
1
文档预览
Data Sheet No. PD60143-O
IR2127(S) / IR2128(S)
IR21271(S) & (PbF)
CURRENT SENSING SINGLE CHANNEL DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
Application- specific gate drive range:
Motor Drive: 12 to 20V (IR2127/IR2128)
Automotive: 9 to 20V (IR21271)
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
FAULT
lead indicates shutdown has occured
Output in phase with input (IR2127/IR21271)
Output out of phase with input (IR2128)
Product Summary
V
OFFSET
I
O
+/-
V
OUT
V
CSth
t
on/off
(typ.)
600V max.
200 mA / 420 mA
(IR2127/IR2128)
Description
Avaliable in Lead-Free
12 - 20V
(IR21271)
9 - 20V
250 mV or 1.8V
200 & 150 ns
The IR2127/IR2128/IR21271(S) is a high voltage, high
speed power MOSFET and IGBT driver. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL outputs,
down to 3.3V. The protection circuity detects over-cur-
rent in the driven power transistor and terminates the
gate drive voltage. An open drain
FAULT
signal is pro-
vided to indicate that an over-current shutdown has oc-
curred. The output driver features a high pulse current
buffer stage designed for minimum cross-conduction.
The floating channel can be used to drive an N-chan-
nel power MOSFET or IGBT in the high side or low
side configuration which operates up to 600 volts.
Packages
8-Lead PDIP
8-Lead SOIC
Typical Connection
V
CC
IN
FAULT
COM
V
B
HO
CS
V
S
V
CC
IN
FAULT
IR2127/IR21271
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
V
CC
IN
FAULT
V
CC
IN
FAULT
COM
V
B
HO
CS
V
S
IR2128
www.irf.com
1
IR2127(S) / IR21271(S) / IR2128(S) & (PbF)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
IN
V
FLT
V
CS
dV
s
/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Logic Supply Voltage
Logic Input Voltage
FAULT Output Voltage
Current Sense Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation @ T
A
+25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
V
S
- 0.3
-55
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
V
B
+ 0.3
50
1.0
0.625
125
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
Symbol
V
B
V
S
V
HO
V
CC
V
IN
V
FLT
V
CS
T
A
Definition
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Logic Supply Voltage
Logic Input Voltage
FAULT Output Voltage
Current Sense Signal Voltage
Ambient Temperature
(IR2127/IR2128)
(IR21271)
Min.
V
S
+ 12
V
S
+ 9
Note 1
V
S
10
0
0
V
S
-40
Max.
V
S
+ 20
V
S
+ 20
600
V
B
20
V
CC
V
CC
V
S
+ 5
125
Units
V
°C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
2
www.irf.com
IR2127(S) / IR21271(S) / IR2128(S) & (PbF)
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
Symbol
t
on
t
off
t
r
t
f
t
bl
t
cs
t
flt
Definition
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Start-Up Blanking Time
CS Shutdown Propagation Delay
CS to FAULT Pull-Up Propagation Delay
Min.
500
Typ. Max. Units Test Conditions
200
150
80
40
700
240
340
250
200
130
65
900
360
510
ns
V
S
= 0V
V
S
= 600V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to V
S
.
Symbol
V
IH
V
IL
V
CSTH+
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
I
CS+
I
CS-
V
BSUV+
V
BSUV-
I
O+
I
O-
Ron, FLT
Definition
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Voltage
CS Input Positive
Going Threshold
Low Level Output Voltage, V
O
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
“High” CS Bias Current
“High” CS Bias Current
V
BS
Supply Undervoltage
Positive Going Threshold
V
BS
Supply Undervoltage
Negative Going Threshold
(IR2127/IR2128)
(IR21271)
(IR2127/IR2128)
(IR21271)
(IR2127/IR21271)
(IR2128)
(IR2127/IR21271)
(IR2128)
(IR2127/IR2128)
(IR21271)
Min.
3.0
180
8.8
6.3
7.5
6.0
200
420
Typ. Max. Units Test Conditions
250
1.8
200
60
7.0
10.3
7.2
9.0
6.8
250
500
125
V
0.8
320
100
100
50
400
120
15
1.0
1.0
1.0
11.8
8.2
10.6
7.7
mA
V
O
= 0V, V
IN
= 5V
PW
10
µs
V
O
= 15V, V
IN
= 0V
PW
10
µs
µA
mV
V
mV
I
O
= 0A
I
O
= 0A
V
B
= V
S
= 600V
V
IN
= 0V or 5V
V
IN
= 5V
V
IN
= 0V
V
CS
= 3V
V
CS
= 0V
V
CC
= 10V to 20V
High Level Output Voltage, V
BIAS
- V
O
V
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
FAULT - Low on Resistance
www.irf.com
3
IR2127(S) / IR21271(S) / IR2128(S) & (PbF)
Functional Block Diagram IR2127/IR21271
V
CC
UV
DETECT
UP
SHIFTERS
IN
PULSE
GEN
V
B
DELAY
FAULT
PULSE
FILTER
DOWN
SHIFTER
PULSE
GEN
Q
R
S
-
+
CS
V
S
HV
LEVEL
SHIFT
V
B
R
R
S
Q
BUFFER
PULSE
FILTER
HO
Q
R
S
COM
Functional Block Diagram IR2128
V
B
5V
UP
SHIFTERS
IN
PULSE
GEN
V
B
DELAY
FAULT
PULSE
FILTER
DOWN
SHIFTER
PULSE
GEN
Q
R
S
-
+
CS
V
S
UV
DETECT
HV
LEVEL
SHIFT
V
CC
R
R
S
Q
BUFFER
PULSE
FILTER
HO
Q
R
S
COM
4
www.irf.com
IR2127(S) / IR21271(S) / IR2128(S) & (PbF)
Lead Definitions
Symbol
V
CC
IN
FAULT
Description
Logic and gate drive supply
Logic input for gate driver output (HO), in phase with HO (IR2127/IR21271)
out of phase with HO (IR2128)
Indicates over-current shutdown has occurred, negative logic
Logic ground
High side floating supply
High side gate drive output
High side floating supply return
Current sense input to current sense comparator
COM
V
B
HO
V
S
CS
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2127/IR21271
IR2127S/IR21271S
8 Lead PDIP
8 Lead SOIC
IR2128
www.irf.com
IR2128S
5
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参数对比
与IR2128PBF相近的元器件有:IR21271SPBF、IR21271PBF、IR2128STRPBF。描述及对比如下:
型号 IR2128PBF IR21271SPBF IR21271PBF IR2128STRPBF
描述 Gate Drivers 1 HI SIDE DRVR INVERTING INPUT USB Interface IC USB to Serial UART Enhanced IC SSOP-28
是否Rohs认证 符合 符合 符合 符合
包装说明 DIP, DIP8,.3 SOIC-8 DIP, DIP8,.3 SOP, SOP8,.25
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 12 weeks 12 weeks 12 weeks 12 weeks
高边驱动器 YES YES YES YES
接口集成电路类型 BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码 R-PDIP-T8 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8
长度 9.88 mm 4.9 mm 9.88 mm 4.9 mm
功能数量 1 1 1 1
端子数量 8 8 8 8
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
标称输出峰值电流 0.5 A 0.5 A 0.5 A 0.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP SOP DIP SOP
封装等效代码 DIP8,.3 SOP8,.25 DIP8,.3 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 15 V 15 V 15 V 15 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.33 mm 1.75 mm 5.33 mm 1.75 mm
最大供电电压 20 V 20 V 20 V 20 V
最小供电电压 10 V 10 V 10 V 10 V
标称供电电压 15 V 15 V 15 V 15 V
电源电压1-最大 620 V 620 V 620 V 620 V
电源电压1-分钟 7 V 4 V 4 V 7 V
表面贴装 NO YES NO YES
技术 CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING
端子节距 2.54 mm 1.27 mm 2.54 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
断开时间 0.2 µs 0.2 µs 0.2 µs 0.2 µs
接通时间 0.25 µs 0.25 µs 0.25 µs 0.25 µs
宽度 7.62 mm 3.9 mm 7.62 mm 3.9 mm
Base Number Matches 1 1 1 -
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