Bulletin I0307J 11/01
IR30DDR..L SERIES
HIGH POWER RECTIFIER DIODES
Junction Size:
V
RRM
Class:
Passivation Process:
30 mm Diameter
400 to 1600 V
Diffused Junction
Major Ratings and Characteristics
Parameters
V
FM
V
RRM
Maximum Forward Voltage
Reverse Breakdown Voltage Range
Units
1.28V
400 to 1600 V
Test Conditions
T
J
= 25°C, I
F
= 1000 A
T
J
= 150°C, I
RRM
= 20 mA
Mechanical Characteristics
Nominal Back Metal Composition
Nominal Front Metal Composition
Chip Dimensions
Recommended Storage Environment
Al - Ni - Au
Nickel plate Molibdenum disc
30 mm diameter (see drawing)
Storage in original container, in dessicated
nitrogen, with no contamination
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IR30DDR..L Series
Bulletin I0307J 11/01
Ordering Information Table
Device Code
IR
1
30
2
D
3
D
4
R
5
16
6
L
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier device
Chip Dimension in Millimeters
Device identifier between chip with same diameter
Type of Device: D = Standard Recovery Diode
Passivation: R = Rubber for all junctions
Voltage code: Code x 100 = V
RRM
Metallization: L = Nickel plate Molibdenum disc (Anode)
Al - Ni - Au (Cathode)
Available Class
04 = 400 V
08 = 800 V
10 = 1000 V
12 = 1200 V
16 = 1600 V
Outline Table
24.8 (0.98) DIA.
1.6 / 1.9
(0.06 / 0.07)
1.3 / 1.6
(0.05 / 0.06)
29.7 (1.17) DIA.
All dimensions are in millimeters (inches)
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IR30DDR..L Series
Bulletin I0307J 11/01
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/01
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