DC COMPONENTS CO., LTD.
IRF830
R
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
V
DSS
= 500 Volts
R
DS(on)
= 1.5 Ohms
I
D
= 4.0 Amperes
Features
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
TO-220AB
.185(4.70)
.173(4.40)
.055(1.39)
.045(1.15)
.295(7.49)
.220(5.58)
.625(15.87)
.570(14.48)
Description
Designed to withstand high energy in the avalanche mode and
switch efficiently. Also offer a drain-to-source diode with fast
recovery time. Designed for high voltage, high speed applications
such as power supplies, PWM motor controls and other inductive
loads, the avalanche energy capability is specified to eliminate
the guesswork in designs where inductive loads are switched and
offer additional safety margin against unexpected voltage transients.
.151
Typ
(3.83)
.405(10.28)
.380(9.66)
Pinning
1 = Gate
2 = Drain
3 = Source
1
2
3
.350(8.90)
.330(8.38)
.640 Typ
(16.25)
Symbol
D
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
G
Dimensions in inches and (millimeters)
S
N-Channel MOSFET
Absolute Maximum Ratings
Characteristic
Drain Current @ T
C
=25
o
C
Gate-to-Source Voltage
Total Power Dissipation @ T
C
=25 C
Derate above 25
o
C
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 10 Seconds
o
Symbol
Continuous
Pulsed
I
D
I
DM
V
GS
P
D
T
J
T
STG
T
L
Rating
4.0
10
20
75
0.6
-55 to +150
-55 to +150
260
Unit
A
V
W
W/
o
C
o
o
o
C
C
C
IRF830
N-Channel Power MOSFET
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Leakage Current
Gate-Source Reverse Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Internal Source Inductance
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Thermal Resistance
(T
J
= 25
o
C unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
V
SD
t
rr
t
on
Min
500
-
-
-
-
2.0
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
1.3
-
775
84
19
24
34
60
36
27
3.5
14
4.5
7.5
-
-
-
-
Max
-
0.25
1.0
100
-100
4.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
1.4
760
1.67
62.5
nH
nH
V
ns
Measured from the drain lead 0.25"
from package to center of die
Measured from the source lead 0.25"
from package to source bond pad
I
S
=4.0A, V
GS
=0V(Note)
I
F
=4.0A, di/dt=100A/µs(Note)
nC
V
DS
=400V, I
D
=4.0A, V
GS
=10V(Note)
ns
V
DD
=250V, I
D
=4.0A,
V
GS
=10V, R
G
=12Ω, R
L
=62Ω(Note)
pF
V
DS
=25V, V
GS
=0V, f=1.0MHz
nA
V
Ω
S
Unit
V
mA
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=500V, V
GS
=0V
V
DS
=400V, V
GS
=0V, T
J
=125
o
C
V
GSF
=20V, V
DS
=0V
V
GSR
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=2.0A(Note)
V
DS
= 15V, I
D
=2.0A(Note)
Intrinsic turn-on time is neglegible and dominated by inductance L
S
+L
D
o
Junction to Case
Junction to Ambient
300µs, Duty Cycle
R
θJC
R
θJA
2%
C/W -
Note: Pulse Test: Pulse Width
DC COMPONENTS CO., LTD.
R
