CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 9)
V
DS
= V
GS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
MIN
1000
2.0
-
-
-
-
3.5
-
-
-
-
I
D
= 3.9A, V
DS
= 800V, V
GS
= 10V (Figure 13)
-
-
Free Air Operation
-
MAX
-
4.0
25
250
±100
3.5
-
30
50
170
50
120
0.83
40
UNITS
V
V
µA
µA
nA
Ω
S
ns
ns
ns
ns
nC
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
R
θJC
R
θJA
V
GS
=
±20V
I
D
= 2.5A, V
GS
= 10V (Figures 7, 8)
I
D
= 2.5A, V
DS
= 100V (Figure 11)
V
DD
= 500V, I
=
3.9A, R
GS
= 9.1Ω, R
L
= 120Ω
V
GS
= 10V
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
NOTES:
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature.
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 640µH, R
G
= 25Ω, peak I
AS
= 9.2A (Figure 3).
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 4.3A (Figure 12)
I
SD
= 3.9A, dl
SD
/dt = 100A/µs
MIN
-
-
MAX
1.8
1000
UNITS
V
ns
4-366
IRFPG40
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
100
T
J
= MAX RATED, T
C
= 25
o
C
SINGLE PULSE
10µs
1.0
I
D
, DRAIN CURRENT (A)
10
0.8
0.6
0.4
0.2
0
0
25
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
125
150
0.01
1
100µs
1
1ms
10ms
0.10
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
DC
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) In[(Ias x R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
I
DM
10
STARTING T
J
= 25
o
C
10
V
GS
= 10V
8
DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
6
V
GS
= 5V
V
GS
= 6V
I
D
, DRAIN CURRENT (A)
4
2
STARTING T
J
= 150
o
C
1
0.01
0.10
1.00
10.00
0
0
100
200
300
400
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
500
V
GS
= 4V
TIME IN AVALANCHE (ms)
FIGURE 3. UNCLAMPED INDUCTIVE SWITCHING SOA
FIGURE 4. OUTPUT CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 6V
5
I
D
, DRAIN CURRENT (A)
8
4
DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
= 7V
6
V
GS
= 5V
4
3
2
150
o
C
1
25
o
C
2
V
GS
= 4V
0
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
0
0
2
4
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
8
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
4-367
IRFPG40
Typical Performance Curves
6
5
DRAIN TO SOURCE ON
RESISTANCE (Ω)
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
Unless Otherwise Specified
(Continued)
3.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
2.7 DUTY CYCLE = 0.5% MAX
I
D
= 2.5A, V
GS
= 10V
2.5
2.2
2.0
1.7
1.5
1.3
1.0
0.8
0
-50
0
50
100
T
J
, JUNCTION TEMPERATURE (
o
C)
150
3
2
1
0
0
2
4
8
6
I
D
, DRAIN CURRENT (A)
10
12
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.3
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
I
D
= 250µA
3000
2500
C, CAPACITANCE (pF)
2000
1500
C
RSS
1000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.2
C
ISS
C
OSS
1.1
1.0
0.9
500
0
-60
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
-40
-20
0
20
40
60
80
100
120 140 150
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs. JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
