PD - 95353A
SMPS MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
IRFR12N25DPbF
IRFU12N25DPbF
I
D
14A
V
DSS
250V
R
DS(on)
max
0.26Ω
D-Pak
IRFR12N25D
I-Pak
IRFU12N25D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
14
9.7
56
144
0.96
± 30
9.3
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.04
50
110
Units
°C/W
Notes
through
are on page 10
www.irf.com
1
12/2/04
IRFR/U12N25DPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
250
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.29
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.26
Ω
V
GS
= 10V, I
D
= 8.4A
5.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 200V, V
GS
= 0V
µA
250
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
6.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
23
5.8
12
9.1
25
16
9.2
810
130
22
1100
50
130
Max. Units
Conditions
–––
S
V
DS
= 25V, I
D
= 8.4A
35
I
D
= 8.4A
8.7
nC V
DS
= 200V
19
V
GS
= 10V,
–––
V
DD
= 125V
–––
I
D
= 8.4A
ns
–––
R
G
= 6.8Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 200V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 200V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
250
8.4
14
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
14
––– –––
showing the
A
G
integral reverse
––– –––
56
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 8.4A, V
GS
= 0V
––– 140 –––
ns
T
J
= 25°C, I
F
= 8.4A
––– 710 –––
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFR/U12N25DPbF
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
10
10
1
0.1
5.0V
1
5.0V
0.01
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
3.5
I
D
= 14A
ID, Drain-to-Source Current
(Α
)
TJ = 175°C
R
DS(on)
, Drain-to-Source On Resistance
3.0
10.00
2.5
(Normalized)
2.0
1.00
T J = 25°C
0.10
1.5
1.0
0.01
5.0
7.0
9.0
VDS = 15V
20µs PULSE WIDTH
11.0
13.0
15.0
0.5
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U12N25DPbF
10000
12
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
I
D
=
8.4A
V
DS
= 200V
V
DS
= 125V
V
DS
= 50V
10
C, Capacitance(pF)
1000
Ciss
7
5
100
Coss
2
Crss
10
1
10
100
1000
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
T J = 175°C
10.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1.00
T J = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1msec
VGS = 0V
0.10
0.0
1.0
2.0
3.0
VSD, Source-toDrain Voltage (V)
10msec
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U12N25DPbF
15
V
DS
V
GS
R
D
12
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
9
6
Fig 10a.
Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
P
DM
t
1
t
2
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
