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IRFR420A

3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.3 A, 500 V, 3 ohm, N沟道, 硅, POWER, 场效应管, TO-252AA

器件类别：半导体    分立半导体   

厂商名称：Kersemi Electronic

厂商官网：http://www.kersemi.com

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器件：IRFR420A

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器件参数
参数名称
属性值
端子数量
2
最小击穿电压
500 V
加工封装描述
ROHS COMPLIANT, DPAK-3
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
MATTE TIN
端子位置
SINGLE
包装材料
PLASTIC/EPOXY
结构
SINGLE WITH BUILT-IN DIODE
壳体连接
DRAIN
元件数量
1
晶体管应用
SWITCHING
晶体管元件材料
SILICON
通道类型
N-CHANNEL
场效应晶体管技术
METAL-OXIDE SEMICONDUCTOR
操作模式
ENHANCEMENT
晶体管类型
GENERAL PURPOSE POWER
最大漏电流
3.3 A
额定雪崩能量
140 mJ
最大漏极导通电阻
3 ohm
最大漏电流脉冲
10 A
文档预览
IRFR420A, IRFU420A, SiHFR420A,
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
17
4.3
8.5
Single
D
FEATURES
500
3.0
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Lead (Pb)-free Available
DPAK
(TO-252)
IPAK
(TO-251)
G
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR420APbF
SiHFR420A-E3
IRFR420A
SiHFR420A
DPAK (TO-252)
IRFR420ATRPbF
a
SiHFR420AT-E3
a
-
-
DPAK (TO-252)
IRFR420ATRLPbF
SiHFR420ATL-E3
-
-
IPAK (TO-251)
IRFU420APbF
SiHFU420A-E3
IRFU420A
SiHFU420A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
500
± 30
3.3
2.1
10
0.67
140
2.5
5.0
83
3.4
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Repetitive Avalanche
Current
a
Energy
a
dV/dt
c
Maximum Power Dissipation
Peak Diode Recovery
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a.
b.
c.
d.
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
Starting T
J
= 25 °C, L = 45 mH, R
G
= 25
Ω,
I
AS
= 2.5 A (see fig. 12).
I
SD
≤
2.5 A, dI/dt
≤
270 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
1.6 mm from case.
www.kersemi.com
1
IRFR420A, IRFU420A, SiHFR420A,
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.5
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 1.5 A
b
V
DS
= 50 V, I
D
= 1.5 A
500
-
2.0
-
-
-
-
1.4
-
0.60
-
-
-
-
-
-
-
-
4.5
± 100
25
250
3.0
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
c
V
GS
= 10 V
I
D
= 2.5 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
-
-
-
-
-
-
-
-
340
53
2.7
490
15
28
-
-
-
8.1
12
16
13
-
-
-
-
-
-
17
4.3
8.5
-
-
-
-
ns
nC
pF
pF
V
DD
= 250 V, I
D
= 2.5 A,
R
G
= 21
Ω,
R
D
= 97
Ω,
see fig. 10
b
-
-
-
-
-
-
-
-
-
-
-
330
760
3.3
A
10
1.6
500
1140
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 2.5 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 2.5 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
www.kersemi.com
2
IRFR420A, IRFU420A, SiHFR420A,
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
1
1
T
J
= 25
°
C
0.1
0.1
4.5V
0.01
0.1
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
4.0
V DS = 50V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3.0
I
D
= 2.5A
2.5
2.0
1
1.5
4.5V
1.0
0.5
0.1
1
10
20μs PULSE WIDTH
T
J
= 150
°
C
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
www.kersemi.com
3
IRFR420A, IRFU420A, SiHFR420A,
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
10
1000
I
SD
, Reverse Drain Current (A)
Coss = C + Cgd
ds
C, Capacitance(pF)
Ciss
100
T
J
= 150
°
C
Coss
1
10
T
J
= 25
°
C
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= 2.5A
V
GS
, Gate-to-Source Voltage (V)
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
15
I
D
, Drain Current (A)
10
10us
10
100us
1
5
1ms
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
8
12
16
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
10000
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.kersemi.com
4
IRFR420A, IRFU420A, SiHFR420A,
5.0
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
4.0
10
V
I
D
, Drain Current (A)
3.0
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
2.0
Fig. 10a - Switching Time Test Circuit
1.0
V
DS
90
%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( ° C)
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
Fig. 10b - Switching Time Waveforms
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
P
DM
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
t
1
t
2
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15
V
V
DS
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T
I
AS
0.01
Ω
+
A
-
V
DD
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
www.kersemi.com
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参数对比
与IRFR420A相近的元器件有：IRFR420ATRPBFA、IRFR420APBF、IRFR420ATRLPBF、IRFU420A、SIHFR420A、SIHFR420A-E3、SIHFR420AT-E3A、SIHFR420ATL-E3、SIHFU420A-E3。描述及对比如下：
型号 IRFR420A IRFR420ATRPBFA IRFR420APBF IRFR420ATRLPBF IRFU420A SIHFR420A SIHFR420A-E3 SIHFR420AT-E3A SIHFR420ATL-E3 SIHFU420A-E3
描述 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
端子数量 2 2 2 2 2 2 2 2 2 2
最小击穿电压 500 V 500 V 500 V 500 V 500 V 500 V 500 V 500 V 500 V 500 V
加工封装描述 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3
无铅 Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
欧盟RoHS规范 Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
状态 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
包装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子涂层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
结构 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
壳体连接 DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
元件数量 1 1 1 1 1 1 1 1 1 1
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
通道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
场效应晶体管技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
操作模式 ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
晶体管类型 GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
最大漏电流 3.3 A 3.3 A 3.3 A 3.3 A 3.3 A 3.3 A 3.3 A 3.3 A 3.3 A 3.3 A
额定雪崩能量 140 mJ 140 mJ 140 mJ 140 mJ 140 mJ 140 mJ 140 mJ 140 mJ 140 mJ 140 mJ
最大漏极导通电阻 3 ohm 3 ohm 3 ohm 3 ohm 3 ohm 3 ohm 3 ohm 3 ohm 3 ohm 3 ohm
最大漏电流脉冲 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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