PD - 95781
IRG4BC15UD-SPbF
IRG4BC15UD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
V
CES
= 600V
Features
UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard D
2
Pak & TO-262 packages
• Lead-Free
G
E
V
CE(on) typ.
= 2.02V
@V
GE
= 15V, I
C
= 7.8A
Benefits
Best Value for Appliance and Industrial Applications
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
n-channel
D
2
Pak
IRG4BC15UD-S
TO-262
IRG4BC15UD-L
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
14
7.8
42
42
4.0
16
± 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
2 (0.07)
Max.
2.7
7.0
–––
80
40
–––
Units
°C/W
g (oz)
www.irf.com
1
08/27/04
IRG4BC15UD-S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min.
600
–––
–––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
4.1
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ.
–––
0.63
2.02
2.56
2.21
–––
-10
6.2
–––
–––
1.5
1.4
–––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 250µA
––– V/°C V
GE
= 0V, I
C
= 1.0mA
2.4
I
C
= 7.8A
V
GE
= 15V
–––
V
I
C
= 14A
–––
I
C
= 7.8A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
––– mV/°C V
CE
= V
GE
, I
C
= 250µA
–––
S
V
CE
= 100V, I
C
= 7.8A
250
µA
V
GE
= 0V, V
CE
= 600V
1400
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.8
V
I
C
= 4.0A
1.7
I
C
= 4.0A, T
J
= 150°C
±100 nA
V
GE
= ±20V
V
GE(th)
∆
V
GE(th)
/
∆
T
J
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
23
4.0
9.6
17
20
160
83
0.24
0.26
0.50
16
21
180
220
0.76
7.5
410
37
5.3
28
38
2.9
3.7
40
70
280
240
Max. Units
Conditions
35
I
C
= 7.8A
6.0
nC
V
CC
= 400V
14
V
GE
= 15V
–––
T
J
= 25°C
–––
ns
I
C
= 7.8A, V
CC
= 480V
240
V
GE
= 15V, R
G
= 75Ω
120
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ
0.63
–––
T
J
= 150°C,
–––
ns
I
C
= 7.8A, V
CC
= 480V
–––
V
GE
= 15V, R
G
= 75Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
nH
Measured 5mm from package
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
–––
ƒ = 1.0MHz
42
ns
T
J
= 25°C
57
T
J
= 125°C
I
F
= 4.0A
5.2
A
T
J
= 25°C
6.7
T
J
= 125°C
V
R
= 200V
60
nC T
J
= 25°C
110
T
J
= 125°C
di/dt 200A/µs
––– A/µs T
J
= 25°C
–––
T
J
= 125°C
IRG4BC15UD-S/LPbF
12.00
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 11W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
10.00
Load Current ( A )
8.00
60% of rated
voltage
6.00
Ideal diodes
4.00
2.00
0.00
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
°
C
10
10
T
J
= 150
°
C
1
1
T
J
= 25
°
C
T
J
= 25
°
C
V
GE
= 15V
20µs PULSE WIDTH
1
10
0.1
0.1
0.1
5.0
V
CC
= 50V
5µs PULSE WIDTH
10.0
15.0
20.0
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRG4BC15UD-S/LPbF
14
4.0
VGE = 15V
80µs PULSE WIDTH
12
10
8
6
4
2
0
25
50
75
100
125
150
VCE , Collector-to Emitter Voltage (V)
Maximum DC Collector Current(A)
IC = 14A
3.0
IC = 7.8A
2.0
IC = 3.9A
1.0
-60 -40 -20
0
20
40
60
80 100 120 140
T
C
, Case Temperature (
°
C)
T J , Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRG4BC15UD-S/LPbF
800
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 7.8A
16
C, Capacitance (pF)
600
Cies
400
12
8
Coes
200
4
Cres
0
0
1
10
100
0
5
10
15
20
25
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.48
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 7.8A
0.46
10
RG = 75
Ω
VGE = 15V
VCC = 480V
IC = 14A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
1
IC = 7.8A
0.44
IC = 3.9A
0.42
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
RG, Gate Resistance (
Ω
)
T J, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
