Data Sheet No. PD 96954A
IRIS-X6757
Features
•
7-pin SIP type full molded package, optimum IC for low-height SMPS.
•
Oscillator is provided on the monolithic control with adopting On-Chip
Trimming Technology
•
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
•
Low start-up circuit current (100uA max)
•Avalanche
energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption
circuit since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
•
Built-in constant voltage drive circuit
•
Built-in step drive circuit
•
Built-in low frequency PWM mode (≒22 kHz)
•
UVLO Burst Standby
•
Two operational modes by auto switching functions according to load
TO-247 Fullpack (7 Lead)
For middle~heavy load operation : QR mode
For light~middle load operation : 1 Bottom Skip mode
Key Specifications
•
Various kinds of protection functions
Pulse-by-Pulse Overcurrent Protection (OCP)
MOSFET RDS(ON)
Overvoltage Protection with Latch mode (OVP)
T ype
VDSS(V)
MAX
AC input(V)
Overload Protection with Latch mode (OLP)
230
±
15%
The maximum limit of on-time
IRIS-X6757
650
85 to 264
0.62Ω
INTEGRATED SWITCHER
Package Outline
Pout(W)
Note 1
300
180
Description
IRIS-X6757 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM)
fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and
standardizing of a power supply system reducing external component count and simplifying the circuit design.
Typical Connection Diagram
IRIS-X6757
OCP/BD
FB
SS/OLP
Vcc
GND
S
D
Note 1:
The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to
140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that
of the above.
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IRIS-X6757
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions
.
Symbol
Definition
I
Dpeak
Drain Current * 1
I
DMAX
E
AS
Vcc
V
SSOLP
I
FB
V
FB
V
OCPBD
P
D1
P
D2
T
F
Top
Tstg
Tch
Maximum switching current *2
Single pulse avalanche energy *3
Input voltage for control part
SS/OLP pin voltage
FB pin inflow current
FB pin voltage
O.C.P/F.B pin voltage
Power dissipation of MOSFET *4
Power dissipation for control part
(MIC) *5
Internal frame temperature in
operation
Operating ambient temperature
Storage temperature
Channel temperature
Terminals
1-2
1-2
1-2
4-3
5-3
6- 3
6- 3
7- 3
1-2
4-3
-
-
-
-
Max.
Ratings
18
18
326
35
-0.5 ~ 6.0
10
-0.5 ~ 9.0
-1.5 ~ 5.0
44
2.8
0.8
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
Units
A
A
mJ
V
V
mA
V
V
W
W
℃
℃
℃
℃
With infinite heatsink
Without heatsink
Specified by Vcc x
Icc
Refer to recommended
operating temperature
within the limits of IFB
Note
Single Pulse
Ta=-20~+125
℃
Single Pulse
V
DD
=30V,L=50mH
I
Lpeak
=3.53A
*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve
*5 Refer to MIC T
F
-P
D2
curve
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IRIS-X6757
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
Ratings
Symbol
Definition
Terminals
MIN
Power Supply Start-up Operation
TYP
MAX
Units
Note
V
CC(ON)
V
CC(OFF)
I
CC(ON)
I
CC(OFF)
fosc
V
SSOLP(SS)
I
SSOLP(SS)
Operation Start Voltage
Operation Stop Voltage
Circuit Current in Operation
Circuit Current in Non-Operation
Oscillation Frequency
Soft Start Operation Stop Voltage
Soft Start Operation Charging Current
4-3
4-3
4-3
4-3
1-2
5-3
5-3
16.3
8.8
-
-
19
1.1
-710
18.2
9.7
-
-
22
1.2
-550
19.9
10.6
6
100
25
1.4
-390
V
V
mA
µA
kHz
V
µA
Vcc=0→20V
Vcc=20→8.8V
-
Vcc=15V
-
-
-
Normal Operation
V
OCPBD(BS1)
V
OCPBD(BS2)
V
OCPBD(LIM)
I
OCPBD
V
OCPBD(TH1)
V
OCPBD(TH2)
V
FB(OFF)
I
FB(ON)
Bottom-Skip Operation Threshold Voltage1
Bottom-Skip Operation Threshold Voltage2
Overcurrent Detection Threshold Voltage
OCP/BD Pin Outflow Current
Quasi-Resonant Operation Threshold Voltage 1
Quasi-Resonant Operation Threshold Voltage 2
FB Pin Threshold Voltage
FB Pin Inflow Current (Normal Operation)
7-3
7-3
7-3
7-3
7-3
7-3
6-3
6-3
-0.72
-0.485
-0.995
-250
0.28
0.67
1.32
600
-0.665
-0.435
-0.94
-100
0.4
0.8
1.45
1000
-0.605
-0.385
-0.895
-40
0.52
0.93
1.58
1400
V
V
V
µA
V
V
V
µA
-
-
-
-
-
-
-
-
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IRIS-X6757
Electrical Characteristics (for Control IC), Contd.
Stand-by Operation
V
CC(S)
V
CC(SK)
I
CC(S)
I
FB(S)
V
FB(S)
T
ON(MIN)
Stand-by Operation Start Voltage
Stand-by Operation Start Voltage Interval
Stand-by Non-Operation Circuit Current
FB Pin Inflow Current (Stand-by)
Stand-by Operation FB Pin Threshold
Voltage
Minimum ON Time
4-3
4-3
4-3
6-3
10.3
1.1
-
-
11.1
1.35
20
4
12.1
1.65
56
14
V
V
µA
µA
Vcc=0→15V
-
Vcc=10.2V
Vcc=10.2V
6-3
1-2
0.55
0.65
1.1
1
1.5
1.35
V
µSec
Vcc=15V
-
Protection Operation
T
ON(MAX)
V
SSOLP(OLP)
I
SSOLP(OLP)
V
CC(OVP)
I
CC(H)
VCC(La.OFF)
Maximum ON Time
OLP Operation Threshold Voltage
OLP Operation Charging Current
OVP Operation Voltage
Latch Circuit Holding Current
*6
1-2
5-3
5-3
4-3
4-3
4-3
27.5
4
-16
25.5
--
6
32.5
4.9
-11
27.7
45
7.2
39
5.8
-6
29.9
140
8.5
µSec
V
µA
V
-
-
-
Vcc=0→30V
Vcc=30→
V
CC(OFF)
-0.3V
Vcc=30→6V
µA
V
Latch Circuit Release Voltage *6
*6 The latch circuit means a circuit operated O.V.P and O.L.P.
*7 The current ratings are based on those of the IC , and plus(+) represents sink and minas(-) represents source.
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IRIS-X6757
Electrical characteristics for MOSFET (Ta=25 deg C)
Ratings
Symbol
V
DSS
I
DSS
R
DS(ON)
tf
θch-F
Definition
Drain-to-Source breakdown voltage
Drain leakage current
On-resistance
Switching time
Thermal resistance
Terminals
1-2
1-2
1-2
1-2
-
MIN
650
-
-
-
-
TYP
-
-
-
-
-
MAX
-
300
0.62
500
1.09
Units
V
µA
Ω
nSec
℃/W
Note
ID=300µA
V
DS
=650V
I
D
=3.4A
-
Between channel
and internal frame
IRIS-X6757
A.S.O. temperature derating coefficient curve
IRIS-X6757
MOSFET
A.S.O. Curve
100
Drain current
limit by ON
resistance
100
Ta=25℃
Single Pulse
A.S.O. temperature derating coefficient[%]
80
0.1ms
10
Drain Current I
D
[A]
1ms
60
1
40
0.1
20
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0
0
20
40
60
80
100
120
0.01
1
10
100
1000
Drain-to-Source Voltage V
DS
[V]
Internal frame temperature TF [℃]
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