首页 > 器件类别 > 分立半导体 > 二极管

IRKC2356-24

Rectifier Diode, 230A, 2400V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
Objectid
107290811
Reach Compliance Code
unknown
ECCN代码
EAR99
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.26 V
最大非重复峰值正向电流
6850 A
最高工作温度
150 °C
最大输出电流
230 A
最大重复峰值反向电压
2400 V
表面贴装
NO
文档预览
I27096 rev. C 10/06
IRK. SERIES
STANDARD RECOVERY DIODES
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
RoHS Compliant
INT-A-pak™ Power Modules
165 A
195 A
230 A
Description
These series of INT-A-paks uses high voltage power
diodes in two basic configurations. The semiconductors
are electrically isolated from the metal base, allowing
common heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or three
phase bridges and the single diode module can be used
in conjunction with the thyristor modules as a freewheel
diode. These modules are intended for general purpose
applications such as battery chargers, welders and plat-
ing equipment and where high voltage and high current
are required (motor drives, etc.).
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
T
J
range
IRK.165.. IRK.195.. IRK.235..
Units
IRK.166.. IRK.196.. IRK.236..
165
100
260
4000
4200
80
73
1130
195
100
305
4750
4980
113
103
1130
230
100
360
6540
6850
214
195
2140
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
°C
up to 2000 up to 2000 up to 2400
- 40 to 150
www.irf.com
1
IRK.165, .166, .195, .196, .235, .236 Series
I27096 rev. C 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
IRK.165- / IRK.166-
IRK.195- / IRK.196-
IRK.235- / IRK.236-
04
08
12
16
20
IRK.235-/ IRK.236-
24
V
RRM
, Maximum repetitive
peak reverse voltage
V
400
800
1200
1600
2000
2400
V
RSM
, Maximum non-repetitive
peak reverse voltage
V
500
900
1300
1700
2100
2500
I
RRM
Max
@ 150°C
mA
50
50
Forward Conduction
Parameters
I
F(AV)
Maximum average forward current
@ Case temperature
I
F(RMS)
Maximum RMS forward current
I
FSM
non-repetitive surge current
IRK.165 IRK.195 IRK.235
Units Conditions
IRK.166 IRK.196 IRK.236
165
100
260
195
100
305
4750
4980
4000
4200
113
103
80
73
1130
0.75
0.86
0.92
0.77
1.32
230
100
360
6540
6850
5500
5750
214
195
151
138
2140
0.79
0.92
0.64
0.49
1.26
V
m
Ω
A
o
180
o
conduction, half sine wave
C
as AC switch
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
A
A
Maximum peak, one-cycle forward, 4000
4200
3350
3500
It
2
Maximum I
2
t for fusing
80
73
56
52
KA
2
s t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
I
2
√t
Maximum I
2
√t
for fusing
798
0.70
0.87
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
FM
=
π
x I
F(AV)
, T
J
= T
J
max., 180
o
conduction
Av. power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
V
F(TO)1
Low level value of threshold voltage
V
F(TO)2
High level value of threshold voltage
r
t1
r
t2
V
FM
Low level forward slope resistance 1.69
High level forward slope resistance 1.42
Maximum forward voltage drop
1.57
Blocking
Parameter
I
RRM
V
INS
sec
Max. peak reverse leakage
current
RMS isolation voltage
3000
V
50 Hz, circuit to base, all terminals shorted, t = 1
IRK.165 / .195 / .235
IRK.166 / .196 / .236
50
Units Conditions
mA
T
J
= 150
o
C
2
www.irf.com
IRK.165, .166, .195, .196, .235, .236 Series
I27096 rev. C 10/06
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating
temperature range
Max. storage temperature range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting torque ±10%
IAP to heatsink
busbar to IAP
Approximate weight
0.20
0.20
0.035
0.17
IRK.165 / .195 / .235
IRK.166 / .196 / .236
-40 to 150
Units Conditions
°C
-40 to 150 °C
K/W
K/W
Per junction, DC operation
4 to 6
4 to 6
500 (17.8)
wt
Mounting surface flat, smooth and
greased
Per module compound is recommended
A mounting
and the torque should be rechecked after
Nm
a
period of 3 hours to allow for the
spread of
the compound
g (oz)
ΔR
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than
DC)
Devices
IRK.165, .166
IRK.195, .196
IRK.235, .236
Sinusoidal conduction @ T
J
max.
120
o
Rectangular conduction @ T
J
max.
120
o
0.019
0.019
0.020
90
o
0.026
0.026
0.027
60
o
0.037
0.037
0.037
180
o
90
o
60
o
30
o
180
o
30
o
0.060
0.060
0.060
Units
K/W
0.016
0.016
0.016
0.019
0.019
0.019
0.024
0.024
0.025
0.035
0.035
0.036
0.060
0.060
0.060
0.011
0.011
0.012
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
6
7
-
-
-
-
-
-
Module type
Circuit configuration
D
2
23
3
6
4
-
24
5
N
6
Current rating: I
F(AV)
x 10 rounded
5 = option with spacers and longer terminal screws
6 = option with standard terminal screws
Voltage code: Code x 100 = V
RRM
(see Voltage Rating Table)
None = Standard devices
N
= Aluminum nitrade substrate
www.irf.com
3
IRK.165, .166, .195, .196, .235, .236 Series
I27096 rev. C 10/06
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for cathode
wire: UL 1385
- UL identification number for package:
UL 94V0
For all types
IRK...5
IRK...6
A
25 (0.98)
23 (0.91)
B
----
30 (1.18)
C
----
36 (1.42)
D
41 (1.61)
----
E
47 (1.85)
----
IRKD...
IRKC...
IRKJ...
IRKE...
Maximum Allowable Case T
emperature (°C)
Maximum Allowable Case T
empera ture (°C)
150
140
130
120
110
100
90
30°
80
0
20
40
60
80 100 120 140 160 180
Average Forward Current (A)
90°
60°
120°
180°
Conduction Angle
150
140
130
120
110
100
90
80
0
50
100
150
200
250
300
Average F
orward Current (A)
30°
60°
90°
120°
180°
DC
Conduction Period
IR
K.166.. S
eries
R
thJC
(DC) = 0.20 K/ W
IR
K.166.. S
eries
R
thJC
(DC) = 0.20 K/ W
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4
www.irf.com
IRK.165, .166, .195, .196, .235, .236 Series
I27096 rev. C 10/06
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
250
225
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
Average Forward Current (A)
Conduction Angle
300
250
200
150
100
Conduc tion Period
180°
120°
90°
60°
30°
R Limit
MS
DC
180°
120°
90°
60°
30°
R Limit
MS
IR
K.166.. S
eries
T
J
= 150°C
Per Junc tion
50
0
0
40
80
120
IRK.166.. S
eries
T
J
= 150°C
Per Junc tion
160
200
240
280
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
4000
3500
3000
2500
2000
1500
1000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Forward Power Loss Characteristics
4000
3500
3000
2500
2000
1500
1000
500
0.01
IRK.166.. S
eries
Per Junc tion
0.1
Pulse T
rain Duration (s)
1
Peak Half S Wave Forward Current (A)
ine
At Any Ra ted Load Cond ition And With
Ra ted V
RRM
Applied Following Surge.
Initia l T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Peak Half S Wave Forward Current (A)
ine
Ma ximum Non Rep etitive Surge Current
Versus Pulse T
rain Dura tion.
Initial T
J
= 150°C
No Volta ge Reap plied
Rated V
RRM
Rea pplied
IR
K.166.. S
eries
Per Junction
Fig. 5 - Maximum Non-Repetitive Surge Current
450
R
t
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum T
otal Forward Power Loss (W)
400
350
180°
(S
ine)
300
250
200
150
100
50
IR
K.166.. S
eries
Per Junction
T = 150°C
J
0
50
100
150
200
K/
W
0.
16
K/
W
0.
1
DC
K/
W
0.4
K/
W
0.7
K/ W
0.3
06
0.
A
hS
W
K/
=
02
0.
W
K/
ta
el
-D
R
0
250
0
25
50
75
100
125
150
T
otal R
MSOutput Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 7 - Forward Power Loss Characteristics
www.irf.com
5
查看更多>
【Link Node 2】有人搞过百度云手环?
我一直都想拿这个 板子玩 百度云手环 哪个项目。不过,那个玩意的真的挺多问题。我捣鼓了半天。还是卡在...
辛昕 RF/无线
第2讲 SOPC开发流程及开发平台简介.pdf
第2讲 SOPC开发流程及开发平台简介.pdf 第2讲 SOPC开发流程及开发平台简介.pdf ...
zxopenljx EE_FPGA学习乐园
怎么用 HS0038之类的红外接收头提高通讯速率
先说悬赏的规矩,由于论坛限制最高15枚芯币,因此只能悬赏15枚,对提出切实有效的建议的各提供100枚...
jishuaihu 综合技术交流
串口触摸屏在使用中失效
各位大哥,小弟刚做wince 开发不久,现在遇到一个问题,触摸屏幕在使用的过程中,触摸部分偶尔会失效...
xchromosome 嵌入式系统
用FPGA设计数字时钟怎么实现 急
用FPGA设计数字时钟怎么实现 急 用FPGA设计数字时钟怎么实现 急 引用FPGA 中自带的主频,...
357081267 FPGA/CPLD
这些储能术语,你了解吗?
在国家 双碳 政策的引领下,储能产业作为推动传统能源系统变革的关键支柱,正经历着高速增长。 ...
qwqwqw2088 电源技术
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消