Bulletin I27140 rev. B 09/97
IRK.56, .71 SERIES
STANDARD DIODES
Features
Electrically isolated: DBC base plate
3500 V
RMS
isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
NEW ADD-A-pak
TM
Power Modules
60 A
80 A
Description
These IRK series of NEW ADD-A-paks use power
diodes in a variety of circuit configurations. The
semiconductor chips are electrically isolated from
the base plate, allowing common heatsinks and
compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges. These modules are intended for general
purpose high voltage applications such as battery
chargers, welders and plating equipment
Major Ratings and Characteristics
Parameters
I
F(AV)
@ 100°C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t @ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
J
T
STG
60
94
1600
1680
12.89
11.76
128.9
80
126
1790
1870
15.90
14.53
159
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
IRK.56
IRK.71
Units
400 to 1600
- 40 to 150
- 40 to150
C
C
o
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1
IRK.56, .71 Series
Bulletin I27140 rev. B 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
04
06
08
IRK.56/ .71
10
12
14
16
V
RRM
, maximum repetitive
peak reverse voltage
V
400
600
800
1000
1200
1400
1600
V
RSM
, maximum non-
repetitive peak rev. voltage
V
500
700
900
1100
1300
1500
1700
I
RRM
max.
@ 150°C
mA
10
Forward Conduction
Parameter
I
F(AV)
I
F(AV)
Max. average forward current
@ Case temperature
Max. average forward current
@ Case temperature
I
F(RMS)
Max. RMS forward current
I
FSM
Max. peak, one-cycle forward,
non-repetitive surge current
IRK.56
60
100
55
105
94
1600
1680
1350
1420
IRK.71
80
100
70
108
126
1790
1870
1500
1570
15.90
14.53
11.25
10.23
159.0
0.83
Units
A
°C
A
°C
A
Conditions
180° conduction, half sine wave
180° conduction, half sine wave
DC @ 92°C case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
I
2
t
Maximum I
2
t for fusing
12.89
11.76
9.12
8.32
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√
t
Maximum I
2
√t
for fusing
128.9
0.96
1.03
2.81
2.48
1.51
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
V
FM
High level value of forward
slope resistance
Max. forward voltage drop
V
0.92
2.68
mΩ
2.40
1.50
V
(I > x
π
x I
F(AV)
), T
J
= T
J
max.
I
FM
=
π
x I
F(AV)
, T
J
= 25°C, t
p
= 400µs square wave
(I > x
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
Blocking
Parameter
I
RRM
V
INS
Max. peak reverse leakage
current
RMS isolation voltage
IRK.56
10
IRK.71
Units
mA
V
Conditions
T
J
= 150
o
C
50 Hz, circuit to base, all terminals shorted
3500 (1 sec)
2
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IRK.56, .71 Series
Bulletin I27140 rev. B 09/97
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
IRK.56
IRK.71
Units
°C
°C
K/W
K/W
Conditions
Junction temperature range
Storage temperature range
Max. thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Mounting tourque ±10%
to heatsink
busbar
Approximate weight
Case style
-40 to 150
-40 to 150
0.5
0.1
0.4
R
thJC
R
thCS
T
Per junction, DC operation
Mounting surface flat, smooth and greased
Flatness
<
0.03 mm; roughness
<
0.02 mm
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
5
4
83 (3)
TO-240AA
Nm
g (oz)
wt
JEDEC
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRK.56
IRK.71
Sine half wave conduction
180
o
0.11
0.06
120
o
0.13
0.08
90
o
0.16
0.11
60
o
0.22
0.14
30
o
0.32
0.21
180
o
0.09
0.06
Rect. wave conduction
120
o
0.14
0.09
90
o
0.17
0.11
60
o
0.23
0.15
30
o
0.32
Units
°C/W
0.21
Ordering Information Table
Device Code
IRK
1
1
2
3
4
-
-
-
-
D
2
71
3
/
16
4
Module type
Circuit configuration (See Circuit Configuration Table)
Current code
Voltage code (See Voltage Ratings Table)
Circuit Configurations Table
IRKD
(1)
IRKE
IRKJ
(1)
IRKC
(1)
~
-
+
(2)
+
(2)
+
+
(2)
-
(2)
D = 2 diodes in series
E = Single diode
J = 2 diodes/common anode
C = 2 diodes/common cathode
-
(3)
-
(3)
+
(3)
-
(3)
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3
IRK.56, .71 Series
Bulletin I27140 rev. B 09/97
Outlines Table
18 REF. (0.71)
Screws M5 x 0.8
IRKD../.. (*)
-
IRKE../.. (*)
18 REF. (0.71)
+
~
+
-
Screws M5 x 0.8
30 ± 0.5
(1.18 ± 0.02)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
24 ± 0.5
(0.94 ± 0.02)
(0.24 ± 0.01)
6.3 ± 0.3
(0.25 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
20.5 ± 0.75
(0.81 ± 0.03)
92 ± 0.5
(3.62 ± 0.02)
20.5 ± 0.75
(0.81 ± 0.03)
2
3
2
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
18 REF. (0.71)
Screws M5 x 0.8
IRKJ../.. (*)
+
18 REF. (0.71)
Screws M5 x 0.8
+
3
20 ± 0.5
(0.79 ± 0.02)
IRKC../.. (*)
-
-
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
+
-
30 ± 0.5
(1.18 ± 0.02)
24 ± 0.5
(0.94 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
(0.24 ± 0.01)
6.3 ± 0.3
(0.25 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
20.5 ± 0.75
(0.81 ± 0.03)
2
3
6.3 ± 0.3
(0.25 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
20.5 ± 0.75
(0.81 ± 0.03)
2
3
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
All dimensions in millimeters (inches)
(*)
For terminals connections, see Circuit Configurations Table
4
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(0.24 ± 0.01)
6.1 ± 0.3
6.1 ± 0.3
24 ± 0.5
(0.94 ± 0.02)
6.1 ± 0.3
6.3 ± 0.3
(0.25 ± 0.01)
(0.24 ± 0.01)
6.1 ± 0.3
24 ± 0.5
(0.94 ± 0.02)
IRK.56, .71 Series
Bulletin I27140 rev. B 09/97
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
150
140
130
Conduction Angle
150
140
130
IRK.56.. Series
R
thJC
(DC) = 0.5 K/W
IRK.56.. Series
R
thJC
(DC) = 0.5 K/W
Conduction Period
120
110
100
60°
30°
90
0
10
20
30
40
50
60
70
Average Forward Current (A)
90°
120°
180°
120
110
30°
60°
100
90
0
20
40
60
90°
120°
180°
DC
80
100
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
Average Forward Current (A)
Conduction Angle
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
120
100
80
60
RMS Limit
40
20
0
0
20
40
60
80
100
Average Forward Current (A)
Conduction Period
180°
120°
90°
60°
30°
RMS Limit
DC
180°
120°
90°
60°
30°
IRK.56.. Series
Per Junction
T = 150°C
J
IRK.56.. Series
Per Junction
T = 150°C
J
Fig. 3 - Forward Power Loss Characteristics
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Forward Power Loss Characteristics
1600
1400
1200
1000
800
600
400
IRK.56.. Series
Per Junction
0.1
1
10
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 150°C
Peak Half Sine Wave Forward Current (A)
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150°C
No Voltage Reapplied
Rated V
RRM
Reapplied
IRK.56.. Series
Per Junction
200
0.01
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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NXP MCU
