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IRKJ71/16A

80 A, 1600 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
TO-240AA
包装说明
POWER, TO-240AA COMPATIBLE, ADD-A-PAK-3
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
UL RECOGNIZED
应用
HIGH VOLTAGE POWER
外壳连接
ISOLATED
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.5 V
JEDEC-95代码
TO-240AA
JESD-30 代码
R-XUFM-X3
JESD-609代码
e0
最大非重复峰值正向电流
1870 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最大输出电流
80 A
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1600 V
表面贴装
NO
端子面层
TIN LEAD
端子形式
UNSPECIFIED
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
Bulletin I27140 rev. E 10/02
IRK.56, .71 SERIES
STANDARD DIODES
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
ADD-A-pak
TM
GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
60 A
80 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
I
F(AV)
@ 100°C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t @ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
J
T
STG
IRK.56
60
94
1600
1680
12.89
11.76
128.9
IRK.71
80
126
1790
1870
15.90
14.53
159
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
400 to 1600
- 40 to 150
- 40 to150
C
C
o
www.irf.com
1
IRK.56, .71 Series
Bulletin I27140 rev. E 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
06
08
IRK.56/ .71
10
12
14
16
V
RRM
, maximum repetitive
peak reverse voltage
V
400
600
800
1000
1200
1400
1600
V
RSM
, maximum non-
repetitive peak rev. voltage
V
500
700
900
1100
1300
1500
1700
I
RRM
max.
@ 150°C
mA
10
Forward Conduction
Parameter
I
F(AV)
I
F(AV)
Max. average forward current
@ Case temperature
Max. average forward current
@ Case temperature
I
F(RMS)
Max. RMS forward current
I
FSM
Max. peak, one-cycle forward,
non-repetitive surge current
IRK.56
60
100
55
105
94
1600
1680
1350
1420
IRK.71
80
100
70
108
126
1790
1870
1500
1570
15.90
14.53
11.25
10.23
159.0
0.83
Units
A
°C
A
°C
A
Conditions
180° conduction, half sine wave
180° conduction, half sine wave
DC @ 92°C case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
It
2
Maximum I t for fusing
2
12.89
11.76
9.12
8.32
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
128.9
0.96
1.03
2.81
2.48
1.51
KA
√s
2
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
V
FM
High level value of forward
slope resistance
Max. forward voltage drop
V
0.92
2.68
mΩ
2.40
1.50
V
(I > x
π
x I
F(AV)
), T
J
= T
J
max.
I
FM
=
π
x I
F(AV)
, T
J
= 25°C, t
p
= 400µs square wave
(I > x
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
Blocking
Parameter
I
RRM
V
INS
Max. peak reverse leakage
current
RMS isolation voltage
IRK.56
10
IRK.71
Units
mA
V
Conditions
T
J
= 150
o
C
50 Hz, circuit to base, all terminals shorted
3500 (1 sec)
2
www.irf.com
IRK.56, .71 Series
Bulletin I27140 rev. E 10/02
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Junction temperature range
Storage temperature range
Max. thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Mounting tourque ±10%
to heatsink
busbar
Approximate weight
Case style
IRK.56
IRK.71
Units
°C
°C
K/W
K/W
Conditions
-40 to 150
-40 to 150
0.5
0.1
0.4
Per junction, DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
5
4
110 (4)
TO-240AA
Nm
gr (oz)
wt
JEDEC
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
180
o
IRK.56
IRK.71
0.11
0.06
Sine half wave conduction
120
o
0.13
0.08
90
o
0.16
0.11
60
o
0.22
0.14
30
o
0.32
0.21
180
o
0.09
0.06
Rect. wave conduction
120
o
0.14
0.09
90
o
0.17
0.11
60
o
0.23
0.15
30
o
0.32
0.21
Units
°C/W
Ordering Information Table
Device Code
IRK
1
D
2
71
3
/
16
4
A
5
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration Table)
Current code
Voltage code (See Voltage Ratings Table)
A: Gen V
www.irf.com
3
IRK.56, .71 Series
Bulletin I27140 rev. E 10/02
Outline Table
Dimensions are in millimeters and [inches]
Circuit Configuration Table
IRKD
(1)
IRKE
IRKJ
(1)
IRKC
(1)
~
-
+
(2)
+
+
(2)
+
(2)
(2)
-
D = 2 diodes in series
E = Single diode
J = 2 diodes/common anode
C = 2 diodes/common cathode
-
(3)
-
(3)
+
(3)
-
(3)
NOTE: To order the Optional Hardware see Bulletin I27900
4
www.irf.com
IRK.56, .71 Series
Bulletin I27140 rev. E 10/02
Maximum Allowable Case Temperature (°C)
150
140
130
Conduction Angle
Maximum Allowable Case Temperature (°C)
IRK.56.. Series
R
thJC
(DC) = 0.5 K/W
150
140
130
IRK.56.. Series
R
thJC
(DC) = 0.5 K/W
Conduction Period
120
110
100
30°
90
0
10
20
30
90°
120
110
100
90
30°
60°
60°
40
120°
180°
60
70
90°
120°
180°
DC
80
100
50
0
20
40
60
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
Conduction Angle
Fig. 2 - Current Ratings Characteristics
120
100
80
60
RMS Limit
40
20
0
Conduction Period
180°
120°
90°
60°
30°
RMS Limit
DC
180°
120°
90°
60°
30°
IRK.56.. Series
Per Junction
T
J
= 150°C
50
60
70
IRK.56.. Series
Per Junction
T
J
= 150°C
0
20
40
60
80
100
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
1
IRK.56.. Series
Per Junction
10
100
1600
1400
1200
1000
800
600
400
Fig. 4 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150°C
No Voltage Reapplied
Rated V
RRM
Reapplied
IRK.56.. Series
Per Junction
0.1
1
10
200
0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
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