Bulletin I27103 rev. A 09/97
IRK.F82.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
INT-A-pakä Power Modules
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
RMS
isolating voltage
Industrial standard package
UL E78996 approved
81 A
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
t
q
t
rr
V
DRM
/ V
RRM
T
J
range
range
IRK.F82..
81
90
180
2200
2300
24.2
22.1
242
10 and 15
2
up to 800
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
µs
µs
V
o
C
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1
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
IRK.F82..
08
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
400
800
V
RSM
, maximum non-
repetitive peak rev. voltage
V
400
800
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
30
Current Carrying Capacity
I
TM
180
o
el
50Hz
400Hz
2500Hz
5000Hz
10000Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
50
90
160
200
150
135
90
50
80% V
DRM
50
60
-
90
265
320
240
215
160
50
180
o
el
250
290
260
235
190
50
400
475
400
355
275
50
80% V
DRM
-
60
-
90
I
TM
100µs
2240
1070
370
235
-
50
80% V
DRM
-
60
3100
1550
550
355
-
50
A
A
A
A
A
V
V
A/µ s
°C
I
TM
Frequency f
Units
22
Ω
/ 0.15 µF
22
Ω
/ 0.15 µF
22
Ω
/ 0.15 µF
On-state Conduction
Parameter
I
T(AV)
Maximum average on-state current
@ Case temperature
I
T(RMS)
Maximum RMS current
I
TSM
Maximum peak, one-cycle,
non-repetitive surge current
IRK.F82..
81
90
180
2200
2300
1850
1950
Units Conditions
A
°C
A
A
T
C
= 90°C, as AC switch
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
2
180° conduction, half sine wave
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= 125°C
I
2
t
Maximum I
2
t for fusing
24.2
22.1
17.1
15.6
I
√t
2
Maximum I
√t
for fusing
2
242
1.20
1.24
2.18
2.00
1.96
600
1000
KA
√s
t = 0 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
mW
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
mA
mA
I
pk
= 350A, T
J
= T
J
max., t
p
= 10ms sine pulse
T
J
= 25°C, I
T
> 30 A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, Ig = 1A
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Typical latching current
2
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Switching
Parameter
di/dt
Maximum non-repetitive rate of rise
IRK.F82..
800
Units Conditions
A/µs
Gate drive 20V, 20Ω, tr
≤
1ms, V
D
= 80% V
DRM
T
J
= 25°C
I
TM
= 350A, di/dt = -25A/µs, V
R
= 50V, T
J
= 25°C
I
TM
= 350A, T
J
= 125°C, di/dt = -25A/µs,
µs
V
R
= 50V, dv/dt = 400V/µs linear to 80% V
DRM
t
rr
t
q
Maximum recovery time
Maximum turn-off time
N
10
2
L
15
µs
Blocking
Parameter
dv/dt
Maximum critical rate of rise of off-state
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
Maximum peak reverse and off-state
leakage current
3000
30
V
mA
50 Hz, circuit to base, T
J
= 25°C, t = 1 s
T
J
= 125°C, rated V
DRM
/V
RRM
applied
IRK.F82..
1000
Units Conditions
V/µs
T
J
= 125°C., exponential to = 67% V
DRM
Triggering
Parameter
P
GM
P
G(AV)
I
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
IRK.F82..
40
2
5
5
200
3
20
0.25
Units Conditions
W
W
A
V
mA
V
mA
V
T
J
= 125°C, rated V
DRM
applied
T
J
= 25°C, V
ak
12V, Ra = 6
f = 50 Hz, d% = 50
T
J
= 125°C, f = 50Hz, d% = 50
T
J
= 125°C, t
p
< 5ms
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to
case
R
thC-hs
Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10%
IAP to heatsink
busbar to IAP
wt
Approximate weight
4 - 6 (35 - 53)
4 - 6 (35 - 53)
500 (17.8)
Nm
0.035
K/W
Mounting surface flat and greased
Per module
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
(lb*in)
not recommendd, busbars should be used and
restrained during tightening. Threads must be
g (oz)
lubricated with a compound
IRK.F82..
- 40 to 125
- 40 to 150
0.25
Units Conditions
°C
K/W
Per junction, DC operation
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3
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
∆R
thJC
Conduction
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
0.016
0.019
0.024
0.035
0.060
0.011
0.020
0.026
0.037
0.060
Units
K/W
Conditions
T
J
= 125°C
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
- Module type
- Circuit configuration
- Fast SCR
T
2
F
3
8
4
2
5
-
08
6
H
7
L
8
N
8
- Current rating: I
T(AV)
x 10 rounded
- 1=
2=
option with spacers and longer terminal screws
option with standard terminal screws
6
7
8
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
- dv/dt code: H
≤
400V/µs
- t
q
code: N
≤
10µs
L
≤
15µs
- None = Standard devices
N
= Aluminum nitrade substrate
9
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate and
cathode wire: UL 1385
- UL identification number for package:
UL 94V0
For all types
IRK...1
IRK...2
A
25 (0.98)
23 (0.91)
B
----
30 (1.18)
C
----
36 (1.42)
D
41 (1.61)
----
E
47 (1.85)
----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction Angle
130
120
110
IRK.F82.. Series
R
thJC
(DC) = 0.25 K/W
IRK.F82.. Series
R
thJC
(DC) = 0.25 K/W
Conduction Period
100
90
80
70
0
20
40
60
80
100
Average On-state Current (A)
30°
100
90
80
70
0
20
40
60
80
100
120
140
Average On-state Current (A)
30°
60°
90°
120°
180°
DC
60°
90°
120°
180°
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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