IRL100HS121
Target Applications
Typical values (unless otherwise specified)
Wireless charging
Adapter
Telecom
V
DSS
100V min.
Q
g tot
3.7nC
Top View
V
GS
± 20V max
Q
gd
1.6nC
R
DS(on)
(max
.
)
42m@ 10V
V
gs(th)
1.7V
Benefits
Higher power density designs
Higher switching frequency
IR MOSFET - Uses OptiMOS
TM
5 Chip
Reduced parts count wherever 5V
supplies are available
Driven directly from microcontrollers
(slow switching)
System cost reductions
D 1
6 D
D 2
D
S
5 D
G 3
4 S
PQFN 2 mm x 2 mm
G
Gate
D
Drain
S
Source
Base part number
IRL100HS121
Package Type
PQFN 2mm x 2mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRL100HS121
RDS(on) , Drain-to -Source On Resistance (m
)
120
110
100
Typical R DS(on) (m
)
90
80
70
60
50
40
30
20
10
3
4
5
6
7
8
9
10
11
12
VGS, Gate -to -Source Voltage (V)
T J = 25°C
T J = 125°C
ID = 6.7A
100
VGS = 4.0V
VGS = 4.5V
VGS = 5.0V
VGS = 6.0V
VGS = 7.0V
VGS = 10V
80
60
40
20
0
4
8
12
16
20
24
ID , Drain Current (A)
Figure 1
Typical On-Resistance vs. Gate Voltage
Figure 2
Typical On-Resistance vs. Drain Current
V2.1
2018-05-08
Final Datasheet
www.infineon.com
Please read the important Notice and Warnings at the end of this document
IRL100HS121
Table of Contents
Table of Contents
Target Applications
Benefits
…..……..……..………………………………………………………………………...……1
…..………………………………………………………………………...……………..…………….1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1
2
3
4
Parameters ………………………………………………………………………………………………3
Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
Electrical characteristics ………………………………………………………………………………5
Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………12
Qualification Information ……………………………………………………………………………………………14
Revision History …………………………………………………………………………………………..…………15
Final Datasheet
2
V2.1
2018-05-08
IRL100HS121
Parameters
1
Table1
Parameter
V
DS
R
DS(on) max
Parameters
Key performance parameters
Values
100
42
11
5.1
Units
V
m
A
A
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
Final Datasheet
3
V2.1
2018-05-08
IRL100HS121
Maximum ratings and thermal characteristics
2
Maximum ratings and thermal characteristics
Table 2
Maximum ratings (at T
J
= 25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
(Source Bonding Technologies Limited)
Continuous Drain Current (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Maximum Power Dissipation
Gate-to-Source Voltage
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
I
D
I
D
I
D
I
D
I
DM
P
D
P
D
P
D
V
GS
T
P
T
J
,T
STG
T
C (Bottom)
= 25°C, V
GS
@ 10V
T
C (Bottom)
= 100°C, V
GS
@ 10V
T
C (Bottom)
= 25°C, V
GS
@ 10V
T
A
= 25°C, V
GS
@ 10V
T
C (Bottom)
= 25°C
T
C (Bottom)
= 25°C
T
C (Bottom)
= 100°C
T
A
= 25°C
-
-
-
Values
11
7.8
10.2
5.1
41
11.5
5.8
2.5
± 20
270
-55 to + 175
Unit
A
W
V
°C
Table 3
Thermal characteristics
Parameter
Symbol
Junction-to-Case (Bottom)
R
JC
Junction-to-Case (Top)
R
JC
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
(<10s)
Conditions
-
-
-
-
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
13
90
60
42
Unit
°C/W
Table 4
Parameter
Avalanche characteristics
Symbol
E
AS
I
AR
Values
13
5.0
Unit
mJ
A
Single Pulse Avalanche Energy
Avalanche Current
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.0mH, R
G
= 50
, I
AS
= 5.0A based on test data.
Pulse width
≤
400µs; duty cycle
≤
2%.
R
is measured at T
J
of approximately 90°C.
When mounted on a 1 inch square PCB (FR-4). Please refer to AN-994 for more details.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 10.2A by source bonding technology.
Final Datasheet
4
V2.1
2018-05-08
IRL100HS121
Electrical characteristics
3
Table 5
Parameter
Electrical characteristics
Static characteristics
Symbol
Conditions
Values
Unit
Min. Typ. Max.
100
-
-
V
-
44
-
mV/°C
-
34
42
m
-
45
59
1.1
-
-
-
-
-
1.7
-5.6
-
-
-
0.9
2.3
-
1.0
100
100
-
V
mV°/C
µA
nA
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.7A
Static Drain-to-Source On-Resistance
R
DS(on)
V
GS
= 4.5V, I
D
= 3.4A
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 10µA
Gate Threshold Voltage Temp. Coefficient
V
GS(th)
/T
J
V
DS
= 80V, V
GS
= 0V
Drain-to-Source Leakage Current
I
DSS
V
GS
= 20V
I
GSS
Gate-to-Source Forward Leakage
I
GSS
V
GS
= -20V
-
Gate Resistance
R
G
Table 6
Parameter
Forward Trans conductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Dynamic characteristics
Symbol
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Conditions
V
DS
= 25V, I
D
= 6.7A
I
D
= 6.7A
V
DS
= 50V
V
GS
= 4.5V
See Fig.8
V
DS
= 50V ,V
GS
= 0V
V
DD
= 50V
I
D
= 6.7A
R
G
= 2.7
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Values
Min. Typ. Max.
15
-
-
-
3.7
5.6
-
0.8
-
-
0.5
-
-
1.6
-
-
0.8
-
-
2.1
-
-
9.5
-
-
7.6
-
-
21
-
-
8.7
-
-
10.7
-
-
440
-
-
80
-
-
6.3
-
-
-
330
60
-
-
Unit
S
nC
nC
ns
pF
Table 7
Parameter
Reverse Diode
Symbol
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Final Datasheet
I
S
I
SM
V
SD
t
rr
Q
rr
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Values
Min. Typ. Max.
D
Unit
-
-
-
-
-
-
-
-
22
28
11
41
1.2
-
-
G
S
A
V
ns
nC
V2.1
2018-05-08
T
J
= 25°C, I
S
= 6.7A,V
GS
= 0V
T
J
= 25°C, I
F
= 6.7A, V
DD
= 50V
di/dt = 100A/µs
5
