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IRS2109SPBF

Gate Drivers HALF BRDG DRVR 600V 120mA 750ns

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
SOP, SOP8,.25
Reach Compliance Code
compliant
ECCN代码
EAR99
内置保护
TRANSIENT; UNDER VOLTAGE
接口集成电路类型
HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.9 mm
湿度敏感等级
2
功能数量
1
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
输出电流流向
SOURCE AND SINK
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
15 V
认证状态
Not Qualified
座面最大高度
1.75 mm
最大供电电压
20 V
最小供电电压
10 V
标称供电电压
15 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
断开时间
0.28 µs
接通时间
0.95 µs
宽度
3.9 mm
Base Number Matches
1
文档预览
Data Sheet No. PD60261
IRS2109/IRS21094(S)PbF
Features
HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime
600 V max.
120 mA / 250 mA
10 V - 20 V
750 ns & 200 ns
540 ns
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High-side output in phase with IN input
Logic and power ground +/- 5 V offset.
Internal 540 ns deadtime, and programmable
immune
up to 5
µ
s with one external R
DT
resistor (IRS21094)
Lower di/dt gate driver for better noise immunity
Shutdown input turns off both channels.
RoHS compliant
(programmable up to 5
µ
s for IRS21094)
Packages
Description
The IRS2109/IRS21094 are high voltage, high
speed power MOSFET and IGBT drivers with de-
pendent high- and low-side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with stan-
dard CMOS or LSTTL output, down to 3.3 V logic.
The output drivers feature a high pulse current
buffer stage designed for minimum driver cross-con-
duction. The floating channel can be used to drive
an N-channel power MOSFET or IGBT in the high-
side configuration which operates up to 600 V.
8 Lead SOIC
14 Lead SOIC
14 Lead PDIP
8 Lead PDIP
Typical Connection
V
CC
up to 600 V
V
CC
IN
SD
V
B
HO
V
S
LO
TO
LOAD
IN
SD
COM
up to 600 V
IRS21094
HO
IRS2109
V
CC
IN
SD
V
CC
IN
SD
DT
V
B
V
S
TO
LOAD
(Refer to Lead Assignments for correct
configuration). These diagrams show electrical
connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
V
SS
R
DT
V
SS
COM
LO
www.irf.com
1
IRS2109/IRS21094(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
DT
V
IN
V
SS
dV
S
/dt
Definition
High-side floating absolute voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side and logic fixed supply voltage
Low-side output voltage
Programmable deadtime pin voltage (IRS21094 only)
Logic input voltage (IN & SD)
Logic ground (IRS21094/IRS21894 only)
Allowable offset supply voltage transient
(8 Lead PDIP)
(8 Lead SOIC)
(14 lead PDIP)
(14 lead SOIC)
(8 Lead PDIP)
(8 Lead SOIC)
(14 lead PDIP)
(14 lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
V
SS
- 0.3
V
SS
- 0.3
V
CC
- 25
-50
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
1.0
0.625
1.6
1.0
125
200
75
120
150
150
300
Units
V
V/ns
P
D
Package power dissipation @ T
A
£
+25
°C
W
Rth
JA
Thermal resistance, junction to ambient
°C/W
T
J
T
S
T
L
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
°C
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2
IRS2109/IRS21094(S)PbF
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at a 15 V differential.
Symbol
VB
V
S
V
HO
V
CC
V
LO
V
IN
DT
V
SS
T
A
Definition
High-side floating supply absolute voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side and logic fixed supply voltage
Low-side output voltage
Logic input voltage (IN & SD)
Programmable deadtime pin voltage (IRS21094 only)
Logic ground (IRS21094 only)
Ambient temperature
Min.
V
S
+ 10
(Note 1)
V
S
10
0
V
SS
Max.
V
S
+ 20
600
V
B
20
V
CC
V
CC
V
CC
5
125
Units
V
V
SS
-5
-40
°
C
Note 1: Logic operational for V
S
of -5 V to +600 V. Logic state held for V
S
of -5 V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25
°C,
DT = V
SS
unless otherwise specified.
Symbol
ton
toff
tsd
MT
tr
tf
DT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Delay matching, HS & LS turn-on/off
Turn-on rise time
Turn-off fall time
Deadtime: LO turn-off to HO turn-on(DT
LO-HO
)
&
HO turn-off to LO turn-on
(
DT
HO-LO
)
Min.
400
4
Typ.
750
200
2 00
0
100
35
540
5
0
0
Max. Units Test Conditions
950
280
280
70
220
80
680
6
60
600
µs
ns
ns
V
S
= 0 V
R
DT
= 0
R
DT
= 200 kΩ
(IR21094)
R
DT
= 0
R
DT
= 200 kΩ
(IR21094)
V
S
= 0 V
V
S
= 0 V or 600 V
MDT
Deadtime matching = DT
LO - HO
- DT
HO-LO
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3
IRS2109/IRS21094(S)PbF
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
SS
= COM, DT= V
SS
and T
A
= 25
°C
unless otherwise specified. The V
IL
, V
IH,
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: IN and SD. The V
O
, I
O,
and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V
IH
V
IL
V
SD,TH+
V
SD,TH-
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Definition
Logic “1” input voltage for HO & logic “0” for LO
Logic “0” input voltage for HO & logic “1” for LO
SD input positive going threshold
SD input negative going threshold
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
V
CC
and V
BS
supply undervoltage positive going
threshold
V
CC
and V
BS
supply undervoltage negative going
threshold
Hysteresis
Output high short circuit pulsed
current
Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
2.5
2.5
20
0.4
8.0
7.4
0.3
120
250
0.05
0.02
75
1.0
5
8.9
8.2
0.7
290
600
0.8
0.8
0.2
0.1
50
130
1.6
20
2
9.8
9.0
mA
V
O
= 0 V, PW
10
µs
V
O
= 15 V,PW
10
µs
µA
µA
mA
V
I
O
= 2 mA
V
B
= V
S
= 600 V
V
IN
= 0 V or 5 V
V
IN
= 0 V or 5 V
R
DT
= 0
IN = 5 V, SD = 0 V
IN = 0 V, SD = 5 V
V
CC
= 10 V to 20 V
V
www.irf.com
4
IRS2109/IRS21094(S)PbF
Functional Block Diagrams
VB
IRS2109
IN
VSS/COM
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
VS
DEADTIME
UV
DETECT
VCC
+5V
LO
SD
VSS/COM
LEVEL
SHIFT
DELAY
COM
VB
IRS21094
IN
VSS/CO M
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
VS
DT
+5V
DEAD TIM E
UV
DETECT
VCC
LO
SD
VSS/CO M
LEVEL
SHIFT
DELAY
CO M
VSS
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5
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参数对比
与IRS2109SPBF相近的元器件有:IRS2109PBF、IRS21094SPBF、IRS2109STRPBF、IRS21094PBF。描述及对比如下:
型号 IRS2109SPBF IRS2109PBF IRS21094SPBF IRS2109STRPBF IRS21094PBF
描述 Gate Drivers HALF BRDG DRVR 600V 120mA 750ns Gate Drivers Hlf Brdg Drvr Soft Trn On Sngl 540ns Gate Drivers HALF BRDG DRVR 600V 120mA 540ns Gate Drivers Hlf Brdg Drvr Soft Trn On Sngl 540ns Gate Drivers Hlf Brdg Drvr Sft Trn On Sngl Inpt
是否Rohs认证 符合 符合 符合 符合 符合
包装说明 SOP, SOP8,.25 DIP, DIP8,.3 ROHS COMPLIANT, MS-012AB, SOIC-14 SOP, SOP8,.25 ROHS COMPLIANT, PLASTIC, MS-001AC, DIP-14
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
内置保护 TRANSIENT; UNDER VOLTAGE TRANSIENT; UNDER VOLTAGE TRANSIENT; UNDER VOLTAGE TRANSIENT; UNDER VOLTAGE TRANSIENT; UNDER VOLTAGE
接口集成电路类型 HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码 R-PDSO-G8 R-PDIP-T8 R-PDSO-G14 R-PDSO-G8 R-PDIP-T14
长度 4.9 mm 9.88 mm 8.65 mm 4.9 mm 19.305 mm
功能数量 1 1 1 1 1
端子数量 8 8 14 8 14
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C
输出电流流向 SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP SOP SOP DIP
封装等效代码 SOP8,.25 DIP8,.3 SOP14,.25 SOP8,.25 DIP14,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 15 V 15 V 15 V 15 V 15 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 5.33 mm 1.75 mm 1.75 mm 5.33 mm
最大供电电压 20 V 20 V 20 V 20 V 20 V
最小供电电压 10 V 10 V 10 V 10 V 10 V
标称供电电压 15 V 15 V 15 V 15 V 15 V
表面贴装 YES NO YES YES NO
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
端子节距 1.27 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
断开时间 0.28 µs 0.28 µs 0.28 µs 0.28 µs 0.28 µs
接通时间 0.95 µs 0.95 µs 0.95 µs 0.95 µs 0.95 µs
宽度 3.9 mm 7.62 mm 3.9 mm 3.9 mm 7.62 mm
JESD-609代码 e3 - e3 e3 -
湿度敏感等级 2 - 2 2 -
端子面层 Matte Tin (Sn) - Tin (Sn) Matte Tin (Sn) - with Nickel (Ni) barrier -
Base Number Matches 1 - 1 1 -
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