PRELIMINARY
Data Sheet No. PD60247revD
IRS2136D/IRS21362D/IRS21363D/IRS21365D/
IRS21366D/IRS21367D/IRS21368D (J&S) PBF
3-PHASE BRIDGE DRIVER
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V (IRS2136D/
IRS21368D), 11.5 V to 20 V (IRS21362D), or 12 V to 20 V
(IRS21363D/IRS21365D/IRS21366D/IRS21367D
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
Cross-conduction prevention logic
Integrated bootstrap diode function
Low side output out of phase with inputs. High side outputs
out of phase (IRS213(6,63, 65, 66, 67, 68)D), or in phase
(IRS21362D) with inputs
3.3 V logic compatible
Lower di/dt gate drive for better noise immunity
Externally programmable delay for automatic fault clear
All parts are LEAD-FREE
Packages
28-Lead SOIC
28-Lead PDIP
44-Lead PLCC w/o 12 Leads
Applications:
*Motor Control
*Air Conditioners/ Washing Machines
*General Purpose Inverters
*Micro/Mini Inverter Drives
Description
The IRS2136xD (J&S) are high voltage, high
Feature Comparison:
IRS2136xD
speed power MOSFET and IGBT driver with
three independent high side and low side
Part
IRS2136D
IRS21362D
IRS21363D
IRS21365D
IRS21366D
IRS21367D
IRS21368D
referenced output channels for 3-phase
___ ___
___
___ ___
___ ___
___ ___
___ ___
___ ___
Input Logic
HIN, LIN
HIN, LIN
HIN, LIN
HIN, LIN
HIN, LIN
HIN, LIN
HIN, LIN
applications. Proprietary HVIC technology
t (typ.)
530 ns
530 ns
530 ns
530 ns
200 ns
200 ns
530 ns
enables ruggedized monolithic construction.
t (typ.)
530 ns
530 ns
530 ns
530 ns
200 ns
200 ns
530 ns
Logic inputs are compatible with CMOS or
V (min.)
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
LSTTL outputs, down to 3.3 V logic. A
V (max.)
0.8 V
0.8 V
0.8 V
0.8 V
0.8 V
0.8 V
0.8 V
current trip function which terminates all six
V
0.46 V
0.46 V
0.46 V
4.3 V
0.46 V
4.3 V
4.3 V
outputs can be derived from an external
V
/
8.9 V
10.4 V
11.1 V
11.1 V
11.1 V
11.1 V
8.9 V
V
current sense resistor. An enable function is
V
/
8.2 V
9.4 V
10.9 V
10.9 V
10.9 V
10.9 V
8.2 V
available to terminate all six outputs
V
simultaneously. An open-drain FAULT signal
is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Overcurrent fault conditions are cleared
automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high
frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side
configuration which operates up to 600 V.
on
off
IH
IL
ITRIP+
CCUV+
BSUV+
CCUV-
BSUV-
Typical Connection
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1
IRS213(6,62,63,65,66,67,68)D(J&S)PbF
PRELIMINARY
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Zener clamps are included between V
CC
& COM (25 V), V
CC
&
V
SS
(20V), and V
Bx
& V
Sx
(20 V).
Symbol
V
S
V
B
V
HO1,2,3
V
CC
V
SS
V
LO1,2,3
V
IN
V
FLT
dV/dt
P
D
Definition
High side offset voltage
High side floating supply voltage
High side floating output voltage
Low side and logic fixed supply voltage
Logic ground
Low side output voltage
Input voltage LIN, HIN, ITRIP, EN, RCIN
FAULT output voltage
Allowable offset voltage slew rate
Package power dissipation
@ T
A
≤
+25 °C
Thermal resistance, junction to
ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(28 lead PDIP)
(28 lead SOIC)
(44 lead PLCC)
(28 lead PDIP)
(28 lead SOIC)
(44 lead PLCC)
Min.
V
B 1,2,3
- 20
-0.3
-0.3
V
CC
- 20
-0.3
V
SS
-0.3
V
SS
-0.3
—
—
—
—
—
—
—
—
-55
—
Max.
V
B 1,2,3
+ 0.3
625
25
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
1.5
1.6
2.0
83
78
63
150
150
300
Units
V
S1,2,3
- 0.3 V
B 1,2,3
+ 0.3
V
V/ns
W
Rth
JA
T
J
T
S
T
L
°C/W
°C
Recommended Operating Conditions
The input/output logic-timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute referenced to COM. The V
S
& V
SS
offset ratings are tested
with all supplies biased at a 15 V differential.
Symbol
V
B1,2,3
V
S 1,2,3
V
CC
V
HO 1,2,3
V
LO1,2,3
V
SS
V
FLT
V
RCIN
Definition
IRS213(6,68)D
Min.
V
S1,2,3
+10
V
S1,2,3
+11.5
V
S1,2,3
+12
Note 1
IRS213(6,68)D
Max.
V
S1,2,3
+ 20
V
S1,2,3
+ 20
V
S1,2,3
+ 20
600
20
20
20
V
B1,2,3
V
CC
5
V
CC
V
CC
Units
High side floating supply voltage
IRS21362D
IRS213(6,63,65,66,67)D
High side floating supply voltage
Low side supply voltage
High side output voltage
Low side output voltage
Logic ground
FAULT output voltage
RCIN input voltage
IRS21362D
IRS213(6,63,65,66,67)D
10
11.5
12
V
S1,2,3
0
-5
V
SS
V
SS
V
Note 1:
Logic operational for V
S
of (COM - 8 V) to (COM + 600 V). Logic state held for V
S
of (COM - 8 V) to (COM – V
BS
).
(Please refer to the Design Tip DT97-3 for more details).
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2
IRS213(6,62,63,65,66,67,68)D(J&S)PbF
PRELIMINARY
Recommended Operating Conditions - (Continued)
The input/output logic-timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute referenced to COM. The V
S
& V
SS
offset ratings are tested
with all supplies biased at a 15 V differential.
Symbol
V
ITRIP
Definition
Min.
V
SS
V
SS
-40
Max. Units
V
SS
+ 5
V
SS
+ 5
125
V
°C
ITRIP input voltage
Logic input voltage LIN, HIN (IRS213(6,63,65,66,67,68)D),
V
IN
LIN, HIN (IRS21362D), EN
T
A
Ambient temperature
Note 1:
HIN, LIN, EN and the ITRIP pin are internally clamped with a 5.2 V zener diode.
Static Electrical Characteristics
V
BIAS
(V
CC
,V
BS1,2,3
) = 15 V unless otherwise specified. The V
IN
, V
TH
, and I
IN
parameters are referenced to V
SS
and are
applicable to all six channels (HIN1,2,3/HIN1,2,3 and LIN1,2,3). The V
O
and I
O
parameters are referenced to COM and
V
S1,2,3
and are applicable to the respective output leads: LO1,2,3 and HO1,2,3.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IRS213(6,63,65)D
2.5
—
—
V
IH
Logic “1” input voltage HIN1,2,3 IRS21362D
Logic “0” input voltage LIN1,2,3, HIN1,2,3
2.5
—
—
IRS213(66,67,68)D
Logic “1” input voltage LIN1,2,3, HIN1,2,3
IRS213(6,63,65)D
Logic “0” input voltage HIN1,2,3 IRS21362D
V
IL
—
—
0.8
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IRS213(66,67,68)D
V
IN
,
TH+
Input positive going threshold
—
1.9
—
V
IN
,
TH-
V
EN,TH+
V
EN,TH-
V
IT,TH+
(6,62,63,66)
V
IT,HYS
(6,62,63,66)
V
IT,TH+
(65,67,68)
V
IT,HYS
(65,67,68)
V
RCIN, TH+
V
RCIN, HYS
V
OH
V
OL
V
CCUV+
(6,68)
V
CCUV-
(6,68)
V
CCUVHY
(6,68)
V
BSUV+
(6,68)
Input negative going threshold
Enable positive going threshold
Enable negative going threshold
ITRIP positive going threshold
ITRIP hysteresis
ITRIP positive going threshold
ITRIP hysteresis
RCIN positive going threshold
RCIN hysteresis
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
V
CC
supply undervoltage positive going
threshold
V
CC
supply undervoltage negative going
threshold
V
CC
supply undervoltage hysteresis
V
BS
supply undervoltage positive going
threshold
—
—
0.8
—
3.85
—
—
—
—
—
8
7.4
0.3
8
1
—
—
0.07
4.3
0.15
8
3
0.9
0.4
8.9
8.2
0.7
8.9
—
2.5
—
0.55
—
4.75
—
—
—
1.4
0.6
9.8
9
—
9.8
Io = 20 mA
V
0.37 0.46
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3
IRS213(6,62,63,65,66,67,68)D(J&S)PbF
PRELIMINARY
Static Electrical Characteristics - (Continued)
V
BIAS
(V
CC
,V
BS1,2,3
) = 15 V unless otherwise specified. The V
IN
, V
TH
, and I
IN
parameters are referenced to V
SS
and are
applicable to all six channels (HIN1,2,3/ HIN1,2,3 and LIN1,2,3). The V
O
and I
O
parameters are referenced to COM and
V
S1,2,3
and are applicable to the respective output leads: LO1,2,3 and HO1,2,3.
Symbol
V
BSUV-
(6,68)
V
BSUVHY
(6,68)
V
CCUV+
(62)
V
CCUV-
(62)
V
CCUVHY
(62)
V
BSUV+
(62)
V
BSUV-
(62)
V
BSUVHY
(62)
V
CCUV+
(63,65,66,67)
V
CCUV-
(63,65,66,67)
V
CCUVHY
(63,65,66,67)
V
BSUV+
(63,65,66,67)
V
BSUV-
(63,65,66,67)
V
BSUVHY
(63,65,66,67)
I
LK
I
QBS
I
QCC
V
IN,CLAMP
I
LIN+
(6,62,63,65)
I
LIN-
(6,62,63,65)
I
LIN+
(66,67,68)
I
LIN-
(66,67,68)
I
HIN+
(6,63,65)
I
HIN-
(6,63,65)
I
HIN+
(62)
I
HIN-
(62)
I
HIN+
(66,67,68)
I
HIN-
(66,67,68)
I
ITRIP+
I
ITRIP-
I
EN+
I
EN-
Definition
V
BS
supply undervoltage negative going
threshold
V
BS
supply undervoltage hysteresis
V
CC
supply undervoltage positive going
threshold
V
CC
supply undervoltage negative going
threshold
V
CC
supply undervoltage hysteresis
V
BS
supply undervoltage positive going
threshold
V
BS
supply undervoltage negative going
threshold
V
BS
supply undervoltage hysteresis
V
CC
supply undervoltage positive going
threshold
V
CC
supply undervoltage negative going
threshold
V
CC
supply undervoltage hysteresis
V
BS
supply undervoltage positive going
threshold
V
BS
supply undervoltage negative going
threshold
V
BS
supply undervoltage hysteresis
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Input clamp voltage (HIN, LIN, ITRIP and EN)
Input bias current (LOUT = HI)
Input bias current (LOUT = LO)
Input bias current (LOUT = HI)
Input bias current (LOUT = LO)
Input bias current (HOUT = HI)
Input bias current (HOUT = LO)
Input bias current (HOUT = HI)
Input bias current (HOUT = LO)
Input bias current (HOUT = HI)
Input bias current (HOUT = LO)
“High” ITRIP input bias current
“Low” ITRIP input bias current
“High” ENABLE input bias current
“Low” ENABLE input bias current
Min. Typ. Max. Units
7.4
0.3
9.6
8.6
0.5
9.6
8.6
0.5
8.2
0.7
10.4
9.4
1
10.4
9.4
1
9
—
11.2
10.2
—
11.2
10.2
—
11.6
11.4
—
11.6
11.4
—
50
120
4
5.65
150
200
3
3
150
200
20
3
3
3
40
1
40
1
µA
µA
mA
V
V
Test
Conditions
10.4 11.1
10.2 10.9
—
0.2
10.4 11.1
10.2 10.9
—
—
—
—
4.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
—
70
3
5.2
110
150
—
—
110
150
5
—
—
—
5
—
5
—
V
B
=V
S
= 600 V
all inputs @
logic 0 value
I
IN
=100 µA
V
IN
=4 V
V
IN
=0 V
V
IN
=4 V
V
IN
=0 V
V
IN
=4 V
V
IN
=0 V
V
IN
=4 V
V
IN
=0 V
V
IN
=4 V
V
IN
=0 V
V
IN
=4 V
V
IN
=0 V
V
IN
=4 V
V
IN
=0 V
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4
IRS213(6,62,63,65,66,67,68)D(J&S)PbF
PRELIMINARY
Static Electrical Characteristics - (Continued)
V
BIAS
(V
CC
,V
BS1,2,3
) = 15 V unless otherwise specified. The V
IN
, V
TH
, and I
IN
parameters are referenced to V
SS
and are
applicable to all six channels (HIN1,2,3/HIN1,2,3 and LIN1,2,3). The V
O
and I
O
parameters are referenced to COM and
V
S1,2,3
and are applicable to the respective output leads: LO1,2,3 and HO1,2,3.
Symbol
I
RCIN
I
O+
I
O-
R
on_RCIN
R
on_FAULT
R
BS
Definition
RCIN input bias current
Output high short circuit pulsed current
Output low short circuit pulsed current
RCIN low on resistance
FAULT low on resistance
Internal BS diode R
ON
Min. Typ. Max. Units
—
120
250
—
—
—
—
200
350
50
50
200
1
—
mA
—
100
100
—
Ω
µA
Test
Conditions
V
RCIN
= 0 V or
15 V
Vo =0 V,
PW
≤10
µs
Vo =15 V,
PW
≤10
µs
I= 1.5 mA
Note 1:
Please refer to Feature Description section for integrated bootstrap functionality information.
Dynamic Electrical Characteristics
Dynamic Electrical Characteristics V
CC
= V
BS
= V
BIAS
= 15 V, V
S1,2,3
= V
SS
= COM, T
A
= 25 °C and CL = 1000 pF unless
otherwise specified.
Symbol
t
on
t
off
t
on
(66,67)
t
off
(66,67)
t
r
t
f
t
EN
t
EN
(66,67)
t
ITRIP
t
bl
t
FLT
t
FILIN
t
filterEN
DT
MT
MDT
PM
t
FLTCLR
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
ENABLE low to output shutdown propagation
delay
ENABLE low to output shutdown propagation
delay
ITRIP to output shutdown propagation delay
ITRIP blanking time
ITRIP to FAULT propagation delay
Input filter time (HIN, LIN)
(IRS213(6,62,63,65,68)D only)
Enable input filter time
(IRS213(6,62,63,65,68)D only)
Deadtime
t
on
, t
off
matching time (on all six channels)
DT matching (Hi->Lo & Lo->Hi on all channels)
Pulse width distortion (pwin-pwout)
FAULT clear time RCIN: R = 2 MΩ, C = 1 nF
Min. Typ. Max. Units
400
400
—
—
—
—
350
—
500
—
400
200
100
190
—
—
—
1.3
530
530
200
200
125
50
460
300
750
400
600
350
200
290
—
—
—
1.65
750
750
—
—
190
75
650
—
1200
—
950
510
—
420
50
60
75
2
ms
ns
Test
Conditions
V
IN
= 0 V & 5 V
V
IN,
V
EN
= 0 V
or 5 V
V
ITRIP
=5 V
V
IN
= 0 V or 5 V
V
ITRIP
= 5 V
V
IN
= 0 V & 5 V
V
IN
= 0 V & 5 V
external dead
time
External dead
time >420 ns
External dead
time 0 s
PW input=10 µs
V
IN
= 0 V or 5 V
V
ITRIP
= 0 V
Note 2:
For high side PWM, HIN pulse width must be
≥
500 ns.
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微控制器 MCU
