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IRS21844SPBF

BUF OR INV BASED PRPHL DRVR, PDIP8
缓冲或反向PRPHL驱动, PDIP8

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
SOIC
包装说明
ROHS COMPLIANT, PLASTIC, MS-012AB, SOIC-14
针数
14
Reach Compliance Code
unknow
ECCN代码
EAR99
内置保护
TRANSIENT; UNDER VOLTAGE
接口集成电路类型
HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码
R-PDSO-G14
JESD-609代码
e3
长度
8.65 mm
湿度敏感等级
1
功能数量
1
端子数量
14
最高工作温度
125 °C
最低工作温度
-40 °C
输出电流流向
SOURCE AND SINK
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP14,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
电源
15 V
认证状态
Not Qualified
座面最大高度
1.75 mm
最大供电电压
20 V
最小供电电压
10 V
标称供电电压
15 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
断开时间
0.4 µs
接通时间
0.9 µs
宽度
3.9 mm
文档预览
Data Sheet No. PD60262
IRS2181/IRS21814(S)PbF
Features
HIGH AND LOW SIDE DRIVER
Packages
8-Lead PDIP
IRS2181
14-Lead PDIP
IRS21814
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant
8-Lead SOIC
IRS2181S
14-Lead SOIC
IRS21814S
Description
Feature Comparison
Cross-
The IRS2181/IRS21814 are high
ton/toff
Input
Deadtime
conduction
Ground Pins
Part
voltage, high speed power MOSFET
(ns)
logic
prevention
(ns)
logic
and IGBT drivers with independent
2181
COM
HIN/LIN
no
none
180/220
high-side and low-side referenced
21814
V
SS
/COM
output channels. Proprietary HVIC
2183
Internal 400
COM
HIN/LIN
yes
180/220
21834
Program 400-5000
V
SS/
COM
and latch immune CMOS technolo-
2184
Internal 400
COM
IN/SD
yes
680/270
gies enable ruggedized monolithic
21844
Program 400-5000
V
SS
/COM
construction. The logic input is com-
patible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive
an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Typical Connection
up to 600 V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
IRS2181
IRS21814
HO
V
CC
HIN
LIN
up to 600 V
V
CC
HIN
LIN
V
B
V
S
TO
LOAD
(Refer to Lead Assignments for correct pin
configuration). These diagrams show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
V
SS
V
SS
COM
LO
www.irf.com
1
IRS2181/IRS21814(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
V
SS
dV
S
/dt
Definition
High-side floating absolute voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side and logic fixed supply voltage
Low-side output voltage
Logic input voltage (HIN & LIN)
Logic ground (IRS21814 only)
Allowable offset supply voltage transient
(8-lead PDIP)
Min.
-0.3
V
B
- 20
V
S
- 0.3
-0.3
-0.3
V
SS
- 0.3
V
CC
- 20
-50
Max.
620
(Note 1)
V
B
+ 0.3
V
B
+ 0.3
20
(Note 1)
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
1.0
0.625
1.6
1.0
125
200
75
120
150
150
300
Units
V
V/ns
P
D
Package power dissipation @ T
A
+25 °C
(8-lead SOIC)
(14-lead PDIP)
(14-lead SOIC)
(8-lead PDIP)
(8-lead SOIC)
(14-lead PDIP)
(14-lead SOIC)
W
Rth
JA
Thermal resistance, junction to ambient
°C/W
T
J
T
S
T
L
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
°C
Note 1: All supplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at a 15 V differential.
Symbol
VB
V
S
V
HO
V
CC
V
LO
V
IN
V
SS
T
A
Definition
High-side floating supply absolute voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side and logic fixed supply voltage
Low-side output voltage
Logic input voltage (HIN & LIN)
Logic ground (IRS21814 only)
Ambient temperature
Min.
V
S
+ 10
Note 2
V
S
10
0
V
SS
-5
-40
Max.
V
S
+ 20
600
V
B
20
V
CC
V
CC
5
125
Units
V
°C
Note 2: Logic operational for V
S
of -5 V to +600 V. Logic state held for V
S
of -5 V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
www.irf.com
2
IRS2181/IRS21814(S)PbF
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25
°C.
Symbol
ton
toff
MT
tr
tf
Definition
Turn-on propagation delay
Turn-off propagation delay
Delay matching, HS & LS turn-on/off
Turn-on rise time
Turn-off fall time
Min.
Typ.
180
220
0
40
20
Max. Units Test Conditions
270
330
35
60
35
ns
V
S
= 0 V
V
S
= 0 V
V
S
= 0 V or 600 V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
SS
= COM and T
A
= 25
°C
unless otherwise specified. The V
IL
, V
IH,
and I
IN
parameters are
referenced to V
SS
/COM and are applicable to the respective input leads HIN and LIN. The V
O
, I
O,
and Ron parameters
are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Definition
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
V
CC
and V
BS
supply undervoltage positive going
threshold
V
CC
and V
BS
supply undervoltage negative going
threshold
Hysteresis
Output high short circuit pulsed current
Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
2.5
20
50
8.0
7.4
0.3
1.4
1.8
60
120
25
8.9
8.2
0.7
1.9
2.3
0.8
1.4
0.2
50
150
240
60
5.0
9.8
V
9.0
A
V
O
= 0 V,
PW
10
µs
V
O
= 15 V,
PW
10
µs
µA
V
I
O
= 0 A
I
O
= 20 mA
V
B
= V
S
= 600 V
V
IN
= 0 V or 5 V
V
IN
= 5 V
V
IN
= 0 V
V
CC
= 10 V to 20 V
www.irf.com
3
IRS2181/IRS21814(S)PbF
Functional Block Diagrams
VB
2181
HIN
VSS/COM
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
VS
VCC
UV
DETECT
LO
LIN
VSS/COM
LEVEL
SHIFT
DELAY
COM
VB
21814
HIN
VSS/COM
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
VS
VCC
UV
DETECT
LO
LIN
VSS/COM
LEVEL
SHIFT
DELAY
COM
VSS
www.irf.com
4
IRS2181/IRS21814(S)PbF
Lead Definitions
Symbol Description
HIN
LIN
VSS
V
B
HO
V
S
V
CC
LO
COM
Logic input for high-side gate driver output (HO), in phase (IRS2181/IRS21814)
Logic input for low-side gate driver output (LO), in phase (IRS2181/IRS21814)
Logic ground (IRS21814 only)
High-side floating supply
High-side gate drive output
High-side floating supply return
Low-side and logic fixed supply
Low-side gate drive output
Low-side return
Lead Assignments
1
2
3
4
HIN
LIN
COM
LO
VB
HO
VS
VCC
8
7
6
5
1
2
3
4
HIN
LIN
COM
LO
VB
HO
VS
VCC
8
7
6
5
8-Lead PDIP
8-Lead SOIC
IRS2181PbF
IRS2181SPbF
1
2
3
4
5
6
7
HIN
LIN
VSS
VB
HO
VS
COM
LO
VCC
1
4
13
1
2
3
HIN
LIN
VSS
VB
HO
VS
COM
LO
VCC
1
4
13
12
11
10
9
8
12
4
11
5
10
6
9
7
8
14-Lead PDIP
14-Lead SOIC
IRS21814PbF
www.irf.com
IRS21814SPbF
5
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