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IS206SMT&R

Transistor Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6

器件类别:光电子/LED    光电   

厂商名称:Isocom Components

厂商官网:http://www.isocom.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Isocom Components
包装说明
SURFACE MOUNT, PLASTIC PACKAGE-6
Reach Compliance Code
compliant
其他特性
UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min
30 V
配置
SINGLE
当前传输比率-最小值
50%
标称电流传输比
50%
最大暗电源
50 nA
最大正向电流
0.06 A
最大正向电压
1.5 V
最大绝缘电压
5300 V
JESD-609代码
e3
安装特点
SURFACE MOUNT
元件数量
1
最高工作温度
100 °C
最低工作温度
-55 °C
光电设备类型
TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散
0.16 W
表面贴装
YES
端子面层
TIN
文档预览
IS205X, IS206X
IS205, IS206
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
UL recognised, File No. E91231
Package Code " GG "
2.54
7.0
6.0
1.2
7.62
6.62
1
2
3
Dimensions in mm
6
5
4
'X' SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead form :-
- STD
- G form
7.62
4.0
3.0
0.5
13°
Max
0.26
- SMD approved to CECC 00802
DESCRIPTION
The IS205, IS206 series of optically coupled
isolators consist of an infrared light emitting
diode and a NPN silicon photo transistor in a
standard 6 pin dual in line plastic package with
the base pin unconnected.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio (50% min)
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
Base pin unconnected for improved
noise immunity in high EMI
environment
APPLICATIONS
DC motor controllers
Industrial systems controllers
Signal transmission between systems of
different potentials and impedances
3.0
0.5
3.35
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
30V
6V
50mA
160mW
60mA
6V
105mW
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
17/7/08
DB92011
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
IS205
IS206
Collector-emitter SaturationVoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
30
6
50
MIN TYP MAX UNITS
1.2
1.5
10
V
μA
V
V
nA
TEST CONDITION
I
F
= 10mA
V
R
= 6V
I
C
= 1mA
I
E
= 100μA
V
CE
= 10V
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 0.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 5V,
I
F
= 10mA, R
L
= 75Ω
Coupled
100
50
0.4
%
%
V
V
RMS
V
PK
Ω
2
2
μs
μs
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time
Output Fall Time
tr
tf
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
17/7/08
DB92011m-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
50
30
20
15
20
10
0
10
I
F
= 5mA
150
Collector current I
C
(mA)
40
30
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter saturation voltage V
CE(SAT)
(V)
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
V
CE
= 10V
T
A
= 25°C
I
F
= 10mA
I
C
= 0.5mA
Forward Current vs. Ambient Temperature
80
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative current transfer ratio
I
F
= 10mA
V
CE
= 10V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
Relative current transfer ratio
10
20
50
Forward current I
F
(mA)
DB92011m-AAS/A2
17/7/08
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