型号
  • 型号
  • 关键词
首页 > 器件类别 > 存储 > 存储

IS41LV44052-50JI

Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, SOJ-24

器件类别：存储    存储   

厂商名称：Integrated Silicon Solution ( ISSI )

下载文档
参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
零件包装代码
SOJ
包装说明
0.300 INCH, SOJ-24
针数
24
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
50 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-J24
JESD-609代码
e0
长度
17.145 mm
内存密度
16777216 bit
内存集成电路类型
FAST PAGE DRAM
内存宽度
4
功能数量
1
端口数量
1
端子数量
24
字数
4194304 words
字数代码
4000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
4MX4
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ24/26,.34
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
刷新周期
2048
座面最大高度
3.556 mm
自我刷新
NO
最大待机电流
0.0005 A
最大压摆率
0.12 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.62 mm
Base Number Matches
1
文档预览
IS41C4405
X
IS41LV4405
X
S
ERIES
4M x 4 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
FEATURES
• Fast Page Mode Access Cycle
• TTL compatible inputs and outputs
• Refresh Interval:
-- 2,048 cycles/32 ms
-- 4,096 cycles/64 ms
• Refresh Mode:
RAS-Only,
CAS-before-RAS
(CBR), and Hidden
• Single power supply:
5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via two
CAS
• Industrial temperature range -40°C to 85°C
ISSI
JUNE 2001
DESCRIPTION
®
The
ISSI
4405x Series is a 4,194,304 x 4-bit high-performance
CMOS Dynamic Random Access Memory. The Fast
Page Mode allows 2,048 or 4096 random accesses within
a single row with access cycle time as short as 20 ns per
4-bit word.
These features make the 4405x Series ideally suited for
high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The 4405x Series is packaged in a 24-pin 300-mil SOJ
with JEDEC standard pinouts.
PRODUCT SERIES OVERVIEW
Part No.
IS41C44052
IS41C44054
IS41LV44052
IS41LV44054
Refresh
2K
4K
2K
4K
Voltage
5V ± 10%
5V ± 10%
3.3V ± 10%
3.3V ± 10%
KEY TIMING PARAMETERS
Parameter
RAS
Access Time (t
RAC
)
CAS
Access Time (t
CAC
)
Column Address Access Time (t
AA
)
Fast Page Mode Cycle Time (t
PC
)
Read/Write Cycle Time (t
RC
)
-50
50
13
25
20
84
-60
60
15
30
25
104
Unit
ns
ns
ns
ns
ns
PIN CONFIGURATION
24 (26) Pin SOJ
PIN DESCRIPTIONS
A0-A11
VCC
I/O0
I/O1
WE
RAS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
GND
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
GND
Address Inputs (4K Refresh)
Address Inputs (2K Refresh)
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power
Ground
No Connection
A0-A10
I/O0-3
WE
OE
RAS
CAS
Vcc
GND
NC
*A11(NC)
A10
A0
A1
A2
A3
VCC
* A11 is NC for 2K Refresh devices.
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
06/24/01
1
IS41C4405
X
IS41LV4405
X
S
ERIES
FUNCTIONAL BLOCK DIAGRAM
ISSI
®
OE
WE
CAS
CONTROL
LOGIC
WE
CONTROL
LOGICS
OE
CONTROL
LOGIC
OE
CAS
CAS
WE
RAS
RAS
CLOCK
GENERATOR
DATA I/O BUS
REFRESH
COUNTER
DATA I/O BUFFERS
ROW DECODER
RAS
COLUMN DECODERS
SENSE AMPLIFIERS
I/O0-I/O3
MEMORY ARRAY
4,194,304 x 4
ADDRESS
BUFFERS
A0-A10(A11)
TRUTH TABLE
Function
Standby
Read
Write: Word (Early Write)
Read-Write
Hidden Refresh
Read
Write
(1)
RAS
H
L
L
L
L→H→L
L→H→L
H→L
H→L
CAS
H
L
L
L
L
L
H
L
WE
X
H
L
H→L
H
L
X
X
OE
X
L
X
L→H
L
X
X
X
Address t
R
/t
C
X
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/NA
X
I/O
High-Z
D
OUT
D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
RAS-Only
Refresh
CBR Refresh
Note:
1. EARLY WRITE only.
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
06/24/01
IS41C4405
X
IS41LV4405
X
S
ERIES
Functional Description
The IS41C4405x and IS41LV4405x are CMOS DRAMs
optimized for high-speed bandwidth, low power applications.
During READ or WRITE cycles, each bit is uniquely
addressed through the 11 or 12 address bits. These are
entered 11 bits (A0-A10) at a time for the 2K refresh
device or 12 bits (A0-A11) at a time for the 4K refresh
device. The row address is latched by the Row Address
Strobe (RAS). The column address is latched by the
Column Address Strobe (CAS).
RAS
is used to latch the
first nine bits and
CAS
is used the latter ten bits.
ISSI
Auto Refresh Cycle
®
To retain data, 2,048 refresh cycles are required in each
32 ms period, or 4,096 refresh cycles are required in each
64ms period. There are two ways to refresh the memory:
1. By clocking each of the 2,048 row addresses (A0
through A10) or 4096 row addresses (A0 through A11) with
RAS at least once every 32 ms or 64ms respectively.
Any read, write, read-modify-write or RAS-only cycle
refreshes the addressed row.
2. Using a
CAS-before-RAS
refresh cycle.
CAS-before-RAS
refresh is activated by the falling edge of
RAS,
while
holding
CAS
LOW. In
CAS-before-RAS
refresh cycle,
an internal 9-bit counter provides the row addresses
and the external address inputs are ignored.
CAS-before-RAS
is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Memory Cycle
A memory cycle is initiated by bring
RAS
LOW and it is
terminated by returning both
RAS
and
CAS
HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum t
RAS
time has expired. A new
cycle must not be initiated until the minimum precharge
time t
RP
, t
CP
has elapsed.
Power-On
After application of the V
CC
supply, an initial pause of
200 µs is required followed by a minimum of eight
initialization cycles (any combination of cycles containing
a
RAS
signal).
During power-on, it is recommended that
RAS
track with
V
CC
or be held at a valid V
IH
to avoid current surges.
Read Cycle
A read cycle is initiated by the falling edge of
CAS
or
OE,
whichever occurs last, while holding
WE
HIGH. The
column address must be held for a minimum time speci-
fied by t
AR
. Data Out becomes valid only when t
RAC
, t
AA
,
t
CAC
and t
OEA
are all satisfied. As a result, the access time
is dependent on the timing relationships between these
parameters.
Write Cycle
A write cycle is initiated by the falling edge of
CAS
and
WE,
whichever occurs last. The input data must be valid
at or before the falling edge of
CAS
or
WE,
whichever
occurs last.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
06/24/01
3
IS41C4405
X
IS41LV4405
X
S
ERIES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
T
V
CC
I
OUT
P
D
T
A
T
STG
Parameters
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Industrial Operation Temperature
Storage Temperature
5V
3.3V
5V
3.3V
Rating
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
1
0 to +70
-40 to +85
–55 to +125
Unit
V
V
mA
W
°C
°C
ISSI
®
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
V
CC
V
IH
V
IL
T
A
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
-40
Typ.
5.0
3.3
—
—
—
—
—
—
Max.
5.5
3.6
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
Unit
V
V
V
°C
°C
CAPACITANCE
(1,2)
Symbol
C
IN
1
C
IN
2
C
IO
Parameter
Input Capacitance: A0-A10(A11)
Input Capacitance:
RAS, CAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O3
Max.
5
7
7
Unit
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
06/24/01
IS41C4405
X
IS41LV4405
X
S
ERIES
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol Parameter
I
IL
I
IO
V
OH
V
OL
I
CC
1
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Standby Current: TTL
Test Condition
Any input 0V
≤
V
IN
≤
Vcc
Other inputs not under test = 0V
Output is disabled (Hi-Z)
0V
≤
V
OUT
≤
Vcc
I
OH
= –5.0 mA, Vcc = 5V
I
OH
= –2.0 mA, Vcc = 3.3V
I
OL
= 4.2 mA, Vcc = 5V
I
OL
= 2 mA, Vcc = 3.3V
RAS, CAS
≥
V
IH
Commercial
Industrial
I
CC
2
I
CC
3
Standby Current: CMOS
Operating Current:
Random Read/Write
(2,3)
Average Power Supply Current
Operating Current:
Fast Page Mode
(2,3,4)
Average Power Supply Current
Refresh Current:
RAS-Only
(2,3)
Average Power Supply Current
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS, CAS
≥
V
CC
– 0.2V
RAS, CAS,
Address Cycling, t
RC
= t
RC
(min.)
RAS=
V
IL
,
CAS
≥
V
IH
t
RC
= t
RC
(min.)
RAS
Cycling,
CAS
≥
V
IH
t
RC
= t
RC
(min.)
RAS, CAS
Cycling
t
RC
= t
RC
(min.)
5V
3.3V
5V
3.3V
5V
3.3V
—
-50
-60
-50
-60
-50
-60
-50
-60
V
CC
Speed
Min.
–5
–5
2.4
—
ISSI
Max.
5
5
—
0.4
2
0.5
3
2
1
120
110
90
80
120
110
120
110
Unit
µA
µA
V
V
mA
®
—
—
—
—
0.5
—
—
—
—
—
—
—
—
mA
mA
I
CC
4
mA
I
CC
4
mA
I
CC
5
mA
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight
RAS
refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each Fast Page cycle.
5. Enables on-chip refresh and address counters.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
06/24/01
5
查看更多>
参数对比
与IS41LV44052-50JI相近的元器件有：IS41LV44054-60JI、IS41LV44054-60J、IS41LV44054-50JI、IS41LV44054-50J、IS41LV44052-60J、IS41LV44052-60JI、IS41LV44052-50J。描述及对比如下：
型号 IS41LV44052-50JI IS41LV44054-60JI IS41LV44054-60J IS41LV44054-50JI IS41LV44054-50J IS41LV44052-60J IS41LV44052-60JI IS41LV44052-50J
描述 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, SOJ-24
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ
包装说明 0.300 INCH, SOJ-24 0.300 INCH, SOJ-24 0.300 INCH, SOJ-24 SOJ, SOJ24/26,.34 0.300 INCH, SOJ-24 0.300 INCH, SOJ-24 0.300 INCH, SOJ-24 0.300 INCH, SOJ-24
针数 24 24 24 24 24 24 24 24
Reach Compliance Code unknown unknow unknow not_compliant unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
最长访问时间 50 ns 60 ns 60 ns 50 ns 50 ns 60 ns 60 ns 50 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-J24 R-PDSO-J24 R-PDSO-J24 R-PDSO-J24 R-PDSO-J24 R-PDSO-J24 R-PDSO-J24 R-PDSO-J24
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 17.145 mm 17.145 mm 17.145 mm 17.145 mm 17.145 mm 17.145 mm 17.145 mm 17.145 mm
内存密度 16777216 bit 16777216 bi 16777216 bi 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 4 4 4 4 4 4 4 4
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 24 24 24 24 24 24 24 24
字数 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
字数代码 4000000 4000000 4000000 4000000 4000000 4000000 4000000 4000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 70 °C 85 °C 70 °C 70 °C 85 °C 70 °C
组织 4MX4 4MX4 4MX4 4MX4 4MX4 4MX4 4MX4 4MX4
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ
封装等效代码 SOJ24/26,.34 SOJ24/26,.34 SOJ24/26,.34 SOJ24/26,.34 SOJ24/26,.34 SOJ24/26,.34 SOJ24/26,.34 SOJ24/26,.34
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 2048 4096 4096 4096 4096 2048 2048 2048
座面最大高度 3.556 mm 3.556 mm 3.556 mm 3.556 mm 3.556 mm 3.556 mm 3.556 mm 3.556 mm
自我刷新 NO NO NO NO NO NO NO NO
最大待机电流 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A
最大压摆率 0.12 mA 0.11 mA 0.11 mA 0.12 mA 0.12 mA 0.11 mA 0.11 mA 0.12 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 J BEND J BEND J BEND J BEND J BEND J BEND J BEND J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm
Base Number Matches 1 1 1 1 1 1 1 1
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
我的系统总是复位，哪位大神帮我看看？
下载到开发板后总是复位/ 我的系统总是复位，哪位大神帮我看看？ ...
zcmagic0318 嵌入式系统
【BB板使用心得之1】win7通过USB连接为BB板共享网络
资料来源： http://lanceme.blogspot.com/2013 ... et-sha...
7leaves DSP 与 ARM 处理器
如果想创业，你最先想用WINCE做什么产品
如果想创业，你最先想用WINCE做什么产品 做技术的很多人都有自己创业的想法，想自己做大，做强，不用...
wujieling WindowsCE
CCS6编译出现undefined symbol怎么解决
CCS6编译出现undefined symbol怎么解决 帮顶，坐等大神解答 没链接库...
xiaoyang12138 电机驱动控制（Motor Control）
wince电量百分比显示
用的是wince4.2，在添加了电池驱动后，编译生成nk文件上板试验，发现控制面板电池属性界面下少了...
梦幻泡影 WindowsCE
90%人做错的题目，c#赋值语句
int a = 18; int b = 9; int c = 1; ...
hywwenger stm32/stm8
热门器件
热门资源推荐
I2C总线简介 pcb设计之旁路技术 KV1900系列变频器RS485/232通讯使用手册 Blackfin驱动对SPI flash编程 这是一个小小的应用软件 软件破解入门教程和解密手册,一本不错的书 游泳馆不同气流方式的空调设计 交流高压断路器检修规范 ia4432手册(中文版) 虚拟化技术实践指南——面向中小企业的高效、低成本解决方案 (王春海)
请教IIC的驱动,当2410上跑WINCE时 关于CMD文件和GEL文件的区别 TQ210 LED驱动+流水灯（转） uC-OS例程，不用修改即可运行 PIC单片机编程风格和格式 TTL反相器电路中，VT4集电极上无电源提供，VT4如何饱和 网站建设 游戏版本架设 STM8如何加密 大开眼界——AD716球机（俗称“黑珍珠”） 有谁知道 PieVectTable.ADCINT=&ad 是什么意思 谢谢了!!
简洁的过零调功器电路设计与分析 单稳态控制电路设计与分析 光控电路设计与分析 永不缺相启动运行的电动机控制电路 IGBT模块通过控制门极阻断过电流 MT3608构成3.7V转12V的升压电路图 运算放大器IC741的基本工作原理及在电路中的实现方式 比较常见的功率整流器和滤波电路 一个简单的红外耳机电路 基于TDA1554的立体声放大器电路
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消