型号
- 型号
- 关键词
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
厂商名称：Integrated Silicon Solution ( ISSI )
器件标准：
| 型号 | IS42R32160F-6BL | IS45S32160F-6BLA1 | IS45S32160F-6TLA1 | IS45S32160F-7BLA1 | IS45S32160F-7TLA1 | IS42R32160F-6BLI |
|---|---|---|---|---|---|---|
| 描述 | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 包装说明 | TFBGA, BGA90,9X15,32 | TFBGA, BGA90,9X15,32 | TSOP2, TSSOP86,.46,20 | TFBGA, BGA90,9X15,32 | TSOP2, TSSOP86,.46,20 | TFBGA, BGA90,9X15,32 |
| Reach Compliance Code | compli | compliant | compliant | compli | compli | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns |
| 其他特性 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 166 MHz | 166 MHz | 166 MHz | 143 MHz | 143 MHz | 166 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| 交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 代码 | R-PBGA-B90 | R-PBGA-B90 | R-PDSO-G86 | R-PBGA-B90 | R-PDSO-G86 | R-PBGA-B90 |
| 长度 | 13 mm | 13 mm | 22.22 mm | 13 mm | 22.22 mm | 13 mm |
| 内存密度 | 536870912 bi | 536870912 bit | 536870912 bit | 536870912 bi | 536870912 bi | 536870912 bi |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 90 | 90 | 86 | 90 | 86 | 90 |
| 字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
| 字数代码 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | - | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 16MX32 | 16MX32 | 16MX32 | 16MX32 | 16MX32 | 16MX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TSOP2 | TFBGA | TSOP2 | TFBGA |
| 封装等效代码 | BGA90,9X15,32 | BGA90,9X15,32 | TSSOP86,.46,20 | BGA90,9X15,32 | TSSOP86,.46,20 | BGA90,9X15,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 电源 | 2.5 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 2.5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES |
| 连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| 最大待机电流 | 0.004 A | 0.004 A | 0.004 A | 0.004 A | 0.004 A | 0.004 A |
| 最大压摆率 | 0.245 mA | 0.245 mA | 0.245 mA | 0.23 mA | 0.23 mA | 0.245 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 2.3 V | 3 V | 3 V | 3 V | 3 V | 2.3 V |
| 标称供电电压 (Vsup) | 2.5 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 2.5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | BALL | BALL | GULL WING | BALL | GULL WING | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.5 mm | 0.8 mm | 0.5 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | DUAL | BOTTOM | DUAL | BOTTOM |
| 宽度 | 8 mm | 8 mm | 10.16 mm | 8 mm | 10.16 mm | 8 mm |
| 筛选级别 | - | AEC-Q100 | AEC-Q100 | AEC-Q100 | AEC-Q100 | - |