IS42SM/RM/VM32200K
512K
x
32Bits
x
4Banks Mobile Synchronous DRAM
Description
These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits.
These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and
output voltage levels are compatible with LVCMOS.
Features
JEDEC standard 3.3V, 2.5V, 1.8V power supply
• Auto refresh and self refresh
• All pins are compatible with LVCMOS interface
• 4K refresh cycle / 64ms
• Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full Page for Sequential Burst
- 4 or 8 for Interleave Burst
• Programmable CAS Latency : 2,3 clocks
• All inputs and outputs referenced to the positive edge of the
system clock
• Data mask function by DQM
• Internal 4 banks operation
• Burst Read Single Write operation
• Special Function Support
- PASR(Partial Array Self Refresh)
- Auto TCSR(Temperature Compensated Self Refresh)
- Programmable Driver Strength Control
- Full Strength or 1/2, 1/4, 1/8 of Full Strength
- Deep Power Down Mode
• Automatic precharge, includes CONCURRENT Auto Precharge
Mode and controlled Precharge.
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. A | August 2012
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IS42SM/RM/VM32200K
Figure1: 90Ball FBGA Ball Assignment
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
DQ26
DQ28
VSSQ
VSSQ
VDDQ
VSS
A4
A7
CLK
DQM1
VDDQ
VSSQ
VSSQ
DQ11
DQ13
2
DQ24
VDDQ
DQ27
DQ29
DQ31
DQM3
A5
A8
CKE
NC
DQ8
DQ10
DQ12
VDDQ
DQ15
3
VSS
VSSQ
DQ25
DQ30
NC
A3
A6
NC
A9
NC
VSS
DQ9
DQ14
VSSQ
VSS
4
5
6
7
VDD
VDDQ
DQ22
DQ17
NC
A2
A10
NC
BA0
/CAS
VDD
DQ6
DQ1
VDDQ
VDD
8
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
BA1
/CS
/WE
DQ7
DQ5
DQ3
VSSQ
DQ0
9
DQ21
DQ19
VDDQ
VDDQ
VSSQ
VDD
A1
NC
/RAS
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
[Top View]
Rev. A | August 2012
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IS42SM/RM/VM32200K
Table2: Pin Descriptions
Pin
CLK
Pin Name
System Clock
Descriptions
The system clock input. All other inputs are registered to the
SDRAM on the rising edge CLK.
Controls internal clock signal and when deactivated, the SDRAM
will be one of the states among power down, suspend or self
refresh.
Enable or disable all inputs except CLK, CKE and DQM.
Selects bank to be activated during RAS activity.
Selects bank to be read/written during CAS activity.
Row Address
Column Address
Auto Precharge
: RA0~RA10
: CA0~CA7
: A10
CKE
/CS
BA0~BA1
Clock Enable
Chip Select
Bank Address
A0~A10
Address
Row Address Strobe,
Column Address Strobe,
Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
No Connection
/RAS, /CAS, /WE
RAS, CAS and WE define the operation.
Refer function truth table for details.
Controls output buffers in read mode and masks input data in
write mode.
Data input/output pin.
Power supply for internal circuits and input buffers.
Power supply for output buffers.
No connection.
DQM0~DQM3
DQ0~DQ31
VDD/VSS
VDDQ/VSSQ
NC
Rev. A | August 2012
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IS42SM/RM/VM32200K
Figure2: Functional Block Diagram
CLK
CKE
EXTENDED
MODE
REGISTER
CLOCK
GENERATOR
TCSR
PASR
BANK D
BANK C
BANK B
BANK A
ROW DECODER
ROW DECODER
ROW DECODER
ROW DECODER
ADDRESS
ROW
ADDRESS
BUFFER &
REFRESH
COUNTER
MODE
REGISTER
SENSE AMPLIFIER
/CS
/RAS
/CAS
/WE
COLUMN
ADDRESS
BUFFER &
BURST
COUNTER
COLUMN DECODER
& LATCH CIRCUIT
Rev. A | August 2012
COMMAND DECODER
CONTROL LOGIC
DATA CONTROL CIRCUIT
DQM
LATCH CIRCUIT
INPUT & OUTPUT
BUFFER
DQ
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IS42SM/RM/VM32200K
Figure3: Simplified State Diagram
EXTENDED
MODE
REGISTER
SET
SELF
REFRESH
MODE
REGISTER
SET
MRS
IDLE
REF
CBR
REFRESH
ACT
DEEP
POWER
DOWN
POWER
DOWN
ROW
ACTIVE
CKE
↓
CKE
ACTIVE
POWER
DOWN
WRITE
READ
PRE
WRITE
SUSPEND
CKE
↓
WRITE
CKE
READ
READ
WRITE
CKE
↓
CKE
READ
SUSPEND
WRITE A
SUSPEND
CKE
↓
WRITE A
CKE
READ A
CKE
↓
CKE
READ A
SUSPEND
POWER
ON
PRECHARGE
PRE-
CHARGE
Automatic Sequence
Manual Input
Rev. A | August 2012
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嵌入式系统
