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IS43R32400E-6BLI

DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205, FBGA-144

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Integrated Silicon Solution ( ISSI )
包装说明
LFBGA, BGA144,12X12,32
Reach Compliance Code
compli
访问模式
FOUR BANK PAGE BURST
最长访问时间
0.7 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
167 MHz
I/O 类型
COMMON
交错的突发长度
2,4,8
JESD-30 代码
S-PBGA-B144
长度
12 mm
内存密度
134217728 bi
内存集成电路类型
DDR DRAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
144
字数
4194304 words
字数代码
4000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
4MX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LFBGA
封装等效代码
BGA144,12X12,32
封装形状
SQUARE
封装形式
GRID ARRAY, LOW PROFILE, FINE PITCH
电源
2.5 V
认证状态
Not Qualified
刷新周期
4096
座面最大高度
1.4 mm
自我刷新
YES
连续突发长度
2,4,8
最大待机电流
0.005 A
最大压摆率
0.3 mA
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
宽度
12 mm
文档预览
IS43/46R16800E, IS43/46R32400E
4Mx32, 8Mx16
128Mb DDR SDRAM
FEATURES
VDD and VDDQ: 2.5V ± 0.2V (-5,-6)
VDD and VDDQ: 2.5V ± 0.1V (-4)
SSTL_2 compatible I/O
Double-data rate architecture; two data transfers
per clock cycle
Bidirectional, data strobe (DQS) is transmitted/
received with data, to be used in capturing data
at the receiver
DQS is edge-aligned with data for READs and
centre-aligned with data for WRITEs
Differential clock inputs (CK and CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Four internal banks for concurrent operation
Data Mask for write data. DM masks write data
at both rising and falling edges of data strobe
Burst Length: 2, 4 and 8
Burst Type: Sequential and Interleave mode
Programmable CAS latency: 2, 2.5, 3, and 4
Auto Refresh and Self Refresh Modes
Auto Precharge
T
ras
Lockout supported (t
rap
= t
rcd
)
JANUARY 2014
DEVICE OVERVIEW
ISSI’s 128-Mbit DDR SDRAM achieves high speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 134,217,728-bit memory
array is internally organized as four banks of 32Mb to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The device
is available in 16-bit and 32-bit data word size Input
data is registered on the I/O pins on both edges of
Data Strobe signal(s), while output data is referenced
to both edges of Data Strobe and both edges of CLK.
Commands are registered on the positive edges of CLK.
An Auto Refresh mode is provided, along with a Self
Refresh mode. All I/Os are SSTL_2 compatible.
ADDRESS TABLE
Parameter
Configuration
Bank Address
Pins
Autoprecharge
Pins
Row Address
Column
Address
Refresh Count
Com./Ind./A1
A2
4M x 32
1M x 32 x 4
banks
BA0, BA1
A8/AP
4K(A0 – A11)
256(A0 – A7)
8M x 16
2M x 16 x 4
banks
BA0, BA1
A10/AP
4K(A0 – A11)
512(A0 – A8)
OPTIONS
• Configuration(s): 4Mx32, 8Mx16
• Package(s):
144 Ball BGA (x32)
66-pin TSOP-II (x16) and 60 Ball BGA (x16)
• Lead-free package available
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Automotive, A1 (-40°C to +85°C)
Automotive, A2 (-40°C to +105°C)
4K / 64ms
4K / 16ms
4K / 64ms
4K / 16ms
KEY TIMING PARAMETERS
Speed Grade
F
ck
Max CL = 4
F
ck
Max CL = 3
F
ck
Max CL = 2.5
F
ck
Max CL = 2
-4
250
200
-5
200
167
133
-6
167
167
133
Units
MHz
MHz
MHz
MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.
Rev. C
1/16/14
1
IS43/46R16800E, IS43/46R32400E
FUNCTIONAL BLOCK DIAGRAM (
x
32)
CK
CK
CKE
CS
RAS
CAS
WE
COMMAND
DECODER
&
CLOCK
GENERATOR
Mode Registers and
Ext. Mode Registers
DATA IN
BUFFER
32
32
4
DM0-DM3
REFRESH
CONTROLLER
I/O 0-31
4
DQS0-DQS3
SELF
REFRESH
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
14
CONTROLLER
32
DATA OUT
BUFFER
V
DD
/V
DDQ
V
ss
/V
ss
Q
32
REFRESH
COUNTER
2
4096
4096
4096
4096
12
ROW DECODER
MULTIPLEXER
12
MEMORY CELL
ARRAY
12
ROW
ADDRESS
LATCH
12
12
ROW
ADDRESS
BUFFER
BANK 0
SENSE AMP I/O GATE
2
COLUMN
ADDRESS LATCH
8
256
(x 32)
BANK CONTROL LOGIC
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
8
2
Integrated Silicon Solution, Inc.
Rev. C
1/16/14
IS43/46R16800E, IS43/46R32400E
FUNCTIONAL BLOCK DIAGRAM (
x
16)
CK
CK
CKE
CS
RAS
CAS
WE
COMMAND
DECODER
&
CLOCK
GENERATOR
Mode Registers and
Ext. Mode Registers
DATA IN
BUFFER
16
16
2
LDM, UDM
REFRESH
CONTROLLER
I/O 0-15
2
LDQS, UDQS
SELF
REFRESH
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
14
CONTROLLER
16
DATA OUT
BUFFER
V
DD
/V
DDQ
V
ss
/V
ss
Q
16
REFRESH
COUNTER
2
4096
4096
4096
4096
12
ROW DECODER
MULTIPLEXER
12
MEMORY CELL
ARRAY
12
ROW
ADDRESS
LATCH
12
12
ROW
ADDRESS
BUFFER
BANK 0
SENSE AMP I/O GATE
2
COLUMN
ADDRESS LATCH
9
512
(x 16)
BANK CONTROL LOGIC
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
9
Integrated Silicon Solution, Inc.
Rev. C
1/16/14
3
IS43/46R16800E, IS43/46R32400E
PIN CONFIGURATIONS
66 pin TSOP - Type II for x16
V
DD
DQ0
V
DD
Q
DQ1
DQ2
V
SS
Q
DQ3
DQ4
V
DD
Q
DQ5
DQ6
V
SS
Q
DQ7
NC
V
DDQ
LDQS
NC
VDD
NC
LDM
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
V
SS
DQ15
V
SS
Q
DQ14
DQ13
V
DD
Q
DQ12
DQ11
V
SS
Q
DQ10
DQ9
V
DD
Q
DQ8
NC
V
SSQ
UDQS
NC
VREF
VSS
UDM
CK
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
PIN DESCRIPTION: x16
A0-A11
A0-A8
BA0, BA1
DQ0 – DQ15
CK, CK
CKE
CS
CAS
RAS
WE
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Column Address Strobe
Command
Row Address Strobe
Command
Write Enable
LDM, UDM
LDQS, UDQS
VDD
VDDQ
VSS
VSSQ
VREF
NC
Data Write Mask
Data Strobe
Power
Power Supply for I/O Pins
Ground
Ground for I/O Pins
SSTL_2 reference voltage
No Connection
4
Integrated Silicon Solution, Inc.
Rev. C
1/16/14
IS43/46R16800E, IS43/46R32400E
PIN CONFIGURATION
Package Code B: 60-ball FBGA (top view) for x16
(8mm x 13mm Body, 0.8mm Ball Pitch)
Top View
(Balls seen through the Package)
: Ball Existing
: Depopulated Ball
Top View(See the balls through the Package)
1 2 3
4 5 6
7 8 9
A
B
C
D
E
F
G
H
J
K
L
M
1
VSSQ
DQ14
DQ12
DQ10
DQ8
VREF
2
DQ15
VDDQ
VSSQ
VDDQ
VSSQ
VSS
CK
NC
A11
A8
A6
A4
3
VSS
DQ13
DQ11
DQ9
UDQS
UDM
CK
CKE
A9
A7
A5
VSS
A
B
C
D
E
F
G
H
J
K
L
M
7
VDD
DQ2
DQ4
DQ6
8
DQ0
VSSQ
VDDQ
VSSQ
9
VDDQ
DQ1
DQ3
DQ5
DQ7
NC
LDQS VDDQ
LDM
WE
RAS
BA1
A0
A2
VDD
VDD
CAS
CS
BA0
A10/AP
A1
A3
BGA Package Ball Pattern
Top View
x 16 Device Ball Pattern
PIN DESCRIPTION: x16
A0-A11
A0-A8
BA0, BA1
DQ0 – DQ15
CK, CK
CKE
CS
CAS
RAS
WE
LDM, UDM
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Column Address Strobe
Command
Row Address Strobe Command
Write Enable
Data Write Mask
LDQS, UDQS
VDD
VDDQ
VSS
VSSQ
VREF
NC
Data Strobe
Power
Power Supply for I/O Pins
Ground
Ground for I/O Pins
SSTL_2 reference voltage
No Connection
Integrated Silicon Solution, Inc.
Rev. C
1/16/14
5
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