型号
- 型号
- 关键词
DRAM 512M (16Mx32) Mobile DDR 1.8v
器件类别：存储
厂商名称：ISSI(芯成半导体)
厂商官网：http://www.issi.com/
下载文档| 型号 | IS46LR32160B-6BLA2-TR | IS43LR32160B | IS43LR32160B-6BLI-TR |
|---|---|---|---|
| 描述 | DRAM 512M (16Mx32) Mobile DDR 1.8v | DRAM 512M, 1.8v, Mobile DDR, 16Mx32 | DRAM 512M, 1.8V, 166Mhz 16Mx32 DDR Mobile |
| Product Attribute | Attribute Value | Attribute Value | Attribute Value |
| 制造商 Manufacturer |
ISSI(芯成半导体) | ISSI(芯成半导体) | ISSI(芯成半导体) |
| 产品种类 Product Category |
DRAM | DRAM | DRAM |
| 类型 Type |
SDRAM Mobile - LPDDR1 | SDRAM Mobile - LPDDR1 | SDRAM Mobile - LPDDR1 |
| Data Bus Width | 32 bit | 32 bit | 32 bit |
| Organization | 16 M x 32 | 16 M x 32 | 16 M x 32 |
| 封装 / 箱体 Package / Case |
BGA-90 | BGA-90 | BGA-90 |
| Memory Size | 512 Mbit | 512 Mbit | 512 Mbit |
| 电源电压-最大 Supply Voltage - Max |
1.95 V | 1.95 V | 1.95 V |
| 电源电压-最小 Supply Voltage - Min |
1.7 V | 1.7 V | 1.7 V |
| 安装风格 Mounting Style |
SMD/SMT | SMD/SMT | SMD/SMT |
| 工作电源电压 Operating Supply Voltage |
1.8 V | 1.8 V | 1.8 V |
| RoHS | Details | - | Details |
| Maximum Clock Frequency | 166 MHz | - | 166 MHz |
| Access Time | 6 ns | - | 6 ns |
| Supply Current - Max | 110 mA | - | 70 mA |
| 最小工作温度 Minimum Operating Temperature |
- 40 C | - | - 40 C |
| 最大工作温度 Maximum Operating Temperature |
+ 105 C | - | + 85 C |
| 系列 Packaging |
Reel | - | Reel |
| Moisture Sensitive | Yes | - | Yes |
| 工厂包装数量 Factory Pack Quantity |
2500 | - | 2500 |
